sjit.ece's picture
Dr. Satyabrata Jit
Professor
Department of Electronics Engineering Indian Institute of Technology
sjit.ece@iitbhu.ac.in
9453364250
+91-542-2575492 (R)
Area of Interest: 
Modeling and Simulation of Advanced CMOS Devices ,Metal-Oxide Based Thin Film Devices for Electronic, Gas Sensing and Optoelectronic Applications, Colloidal Quantum Dots Based Photodetectors , Solar Cells, Microwave Photonic Devices & circuits ,Signal Processing & Communication Systems

Academic Qualifications:

Ph.D. (2002) in Semiconductor Devices (IT-BHU, Varanasi) 
M.Tech. (1995) in Communication Systems (IIT Kanpur)
B.E. (1993) in Electronics & Tele-Communication Engineering (B.E. College, Calcutta University, West Bengal)

Brief Profile:

Prof. S. Jit has earned his B.E., M.Tech. and Ph.D. degrees from the University of Calcutta, West Bengal in 1993; Indian Institute of Technology (IIT), Kanpur, India in 1995; and Institute of Technology (IT), Banaras Hindu University (BHU), Varanasi, India in 2002 respectively. He has been working as Professor in Department of Electronics Engineering, IIT(BHU), Varanasi since June, 2010. Prof. Jit has served as the Coordinator/Director, Computer Center, BHU from February 2012 to March 2014. He has been serving as the Head, Department of Electronics Engineering, IIT(BHU), Varanasi since April 08, 2015.
Prof. Jit has supervised 16 Ph.D. theses and has published more than 190 papers in various peer reviewed international journals and conference proceedings. He has coauthored a book titled Millman’s Electronic Devices and Circuits, 4/e published by the McGraw-Hill Publishing Company, New Delhi with Jacob Millman and Christos C. Halkias as other two coauthors.. He is one of the Editors of three books titled Advanced Optoelectronic Materials and Devices and Emerging Trends in Electronic and Photonic Devices & Systems both published by the Macmillan Publishers India Limited, New Delhi in 2008 and 2009 respectively and Advances in Microelectronics and Photonics from Nova Science Publishers, New York, USA in 2012. He has worked as one of the Guest Editors of the Special Issue on Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications (NAGAP) of the Scientific World Journal in 2014. His present research interests include the modeling and simulation of nanoscaled CMOS devices; nanostructured materials and devices for electronic, optoelectronic and gas sensing applications; Flexible Electronic Devices for Gas Sensing and Optoelectronic Applications, Solar Cells etc.
Prof. Jit is the recipient of the INSA (Indian National Science Academy) Visiting Fellowship in 2006. He has worked as Postdoctoral Research Fellow in the Optoelectronic Laboratory, Georgia State University, Atlanta, USA during March-August, 2007. He was awarded the BOYSCAST Fellowship of the Department of Science and Technology (DST), Govt. of India for the year 2010-11 to carry out some advance research in the Max-Born-Institute, Berlin, Germany during Sept.-Dec, 2011. Prof. Jit is the Fellow, IETE (India); Fellow, Institute of Engineers and Senior Member, IEEE (USA).

Teaching Experience:

  1. Working as Professor, Dept. of Electronics Engineering, IT-BHU, since June 2010
  2. Associate Professor, Dept. of Electronics Engineering, IT-BHU,  June 2007-June 2010
  3. Reader,  Dept. of Electronics Engineering, IT-BHU, June 2004-June 2007
  4. Lecturer, Dept. of Electronics Engineering, IT-BHU, April 1998-June 2004
  5. Lecturer, Dept. of Electronics and Comm. Engineering, G.B. Pant Engineering College, Uttaranchal, June 1995-April 1998 

UG Courses Taught:

  • Signals and Systems
  • Digital Signal Processing
  • Analog Communication Systems
  • Television Engineering
  • High-Speed Devices

PG Courses Taught:

  • Signal Processing
  • Estimation and Detection Theory
  • Optical Communication

Ph.D. Thesis Supervised:     
 

  1. Chandan Kumar (2018), Fabrication and Characterization of PQT-12 Based Organic Thin Film Devices for Sensing Applications
  2. Abhishek Tripathi (2018), Target Tracking and Connectivity Using Deterministically Deployed Directional Wireless Sensor Networks
  3. Yogesh Kumar(2018), Fabrication and Characterization of Solution Processed Colloidal ZnO Quantum Dots Based Spectrum Selective Ultraviolet Photodetectors
  4. Sanjay Kumar (2018), Analytical Modeling and Simulation of Some Gate Structure Engineered Homo/Heterojunction Double-Gate Tunnel FETs
  5. Gopal Rawat (2018), Fabrication and Characterization of p-Si/nTiO2 Nanostructured Heterojunction Diodes for Electronic and Optoelectronic Applications
  6. Hemant Kumar (2018), Fabrication and Characterization of Colloidal Quantum Dots Based Photodetectors
  7. Ekta Goel (2017), Two Dimensional Analytical Modeling of Channel Engineered Dual-Material Double-Gate MOSFETs
  8. Balraj Singh (2017), Analytical Modeling and Simulation of Double Gate Junctionless Field Effect Transistors (DG-JLFETs)
  9. Kunal Singh (2017), “Modeling and Simulation of Some Ultra Shallow Junction Based Non-Conventional MOSFETs”
  10. Amritanshu Pandey (2015), “Fabrication and Characterization of Some ZnO Thin-Film Based Devices for Ultraviolet Detection Applications”
  11. Mirgender Kumar (2015), “Modeling and Simulation of Subthreshold Characteristics of Strained-Si SOI MOSFETs with Emphasis on Possible Terahertz Application”
  12. Divya Somvanshi (2015), “Some Studies of ZnO Nanostructure Based Schottky and Heterojunction Devices Fabricated on Silicon Substrates”
  13. Aniruddha Bahadur Yadav (2014), “Fabrication and Characterization of ZnO Thin Films and Pd/ZnO Schottky Contacts for Electronic and Gas Sensing Applications”
  14. Purnima Hazra (2014), “Fabrication and Characterization of Some Si/ZnO Based Nanostructured Heterojunction Devices”
  15. Sarvesh Dubey (2012), “Analytical Modeling and Simulation of Short-Channel Double-Gate MOSFETs with a Vertical Gaussian-like Doping Profile
  16. Deepak Mishra (2012), “Some Studies on the Combined Source Channel Coding for Deep Space Applications
  17. Pramod Kumar Tiwari (2011): Modeling and Simulation of Subthreshold Characteristics of  Short-Channel Double-Gate (DG) MOSFETs
  18. Shweta Tripathi (2011): Two-Dimensional (2D) Modeling and Simulation of Optically Controlled Short-Channel GaAs MESFETs
  19. Ghusoon M. Ali (2011): Investigations on ZnO Thin-Film Based Devices for Electronic and Optoelectronic Applications
  20. Neti V. L. Narasimha Murty (2007): Analytical Modeling of Optically Controlled GaAs MESFETs With Emphasis on Substrate Related Effects
  21. Prashant Kumar Pandey (2004): Some Studies on Theoretical Modeling and Simulation of Si-SOI-MESFETs.

 
M.Tech. Thesis Supervised:

  1. Ms. Khushboo Singh (2019), “Three-Dimensional TCAD Simulation of PQT-12 Based Organic Thin Film Transistor”
  2. Ms. Priya Kumari (2018), “Analytical Modeling and Simulation of Stacked Gate HfO2/SiO2 DG TFET with Source Pocket”
  3. Ms. Neha Niranjan (2018), “TCAD Simulation Based Performance Optimization of Heterojunction Double Gate (DG) TFETs”
  4. Ms. Astha Goel (2017), “Impact of Quantum Confinement on Electrical Characteristics of Heterojunction Double Gate Tunnel Field Effect Transistor”
  5. Ms. Ashvini Rahangdale (2017), “A simulation based study for the electrical characteristic of SOI TFETs with Ferroelectric stacked gate oxide structures”
  6. Mr. B. Sandeep Kumar (2017), “Two dimensional analytical model for the Drain current of SOI Tunnel-FETs”
  7. Ms. Puspanjali Soren (2017), “Performance Optimization of Heterojunction Tunnel Field Effect Transistors”
  8. Trailokya Nath Rai (2016), “Performance investigation of dopingless hetero structure TFETs with a stacked SiO2/Ferroelectric oxide gate structure”
  9. Alok Singh Kushwaha (2016), “Effect of Source/Drain elevation and side spacer dielectrics on the drivability performance of DGJL FETs”
  10. Chandan Kumar (2016), “Performance analysis of DMG dopingless TFET with interface trap charges”
  11. Mr. Manish (2016), “Effect of interface charges on the electrical characteristics of double gate TFETs”
  12. Rupanjana Mukherjee (2015), “A Multiresolution Scheme of Invisible Image Watermarking Robust to Image Manipulations”
  13. Prince Kumar (VIT University, 2015), “Design and Simulation of Tunnel Field Effect Transistors (TFETs) for High ON-Current Applications”
  14. Abhinav Pratap Singh (2015), “Surface Potential Based Threshold Voltage Model of High-k Double-Gate (DG) MOSFETs With Gaussian-Like Doping Profile”
  15. Neetu Singh (2015), “Analytical Modeling and Simulation of Subthreshold Characteristics of Single-Gate-Dual-Oxide (SGDO) Silicon-on-Insulator (SOI) MOSFETs”
  16. Piyush Kumar Pushkar (2015), “Analytical Modeling and Simulation of Threshold Voltage of Double-Gate (DG) Tunnel-Field-Effect-Transistors (TFETs)”
  17. Ashutosh Kumar Dikshit (2015), “Photonic Crystal Based Optical Switch”
  18. Shiv Narayan Kumar(2014), “Steganography Based on Contourlet Transform Using MATLAB”
  19. Vivek Kumar (2014), “Design of New Window Functions for FIR Filters using MATLAB”
  20. Shailesh Bangar (2014), “Implementation of Embedded Zerotree Wavelet (EZW) Algorithm”
  21. Varun Goel(2014), “Two Dimensional Analytical Model for Threshold Voltage of Graded Channel Dual Material Gate (GCDMG) SOI MOSFETs”
  22. Sanjay Sharma (2014), “Analytical Modeling and ATLAS Based Simulation of Vertical Trapezoidal Doped Fully Depleted Silicon-on-Insulator MOSFETs”
  23. Pankaj Kumar (2014), “Analytical Modeling and ATLAS Based Simulation of Dual Dielectric Fully Depleted Silicon-on-Insulator MOSFETs”
  24. Prem Kumar (2013)  “Design, Simulation and Fabrication of Digital Micro-Mirror Devices”
  25. Sanjay Kumar (2013), “Analytical Modeling and ATLAS Based Simulation of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian Profile”
  26. Gopal Rawat(2013), “Analytical Modeling and Simulation of Doped Strained-Si on Silicon-on-Insulator (SSOI) MOSFETs”
  27. Ms. Ekta Goel (2013), “Analytical Modeling and ATLAS Based Simulation of High-k Gate-Stacked Double-Gate (DG) MOSFETs”
  28. Pushkar Singh (2013), “Spectrum Sensing in Cognitive Radio Using Energy Detection Technique”
  29. Chandan kumar Bhagat (2013), “Peak to Average Power Reduction in Orthogonal Frequency Division Multiplexing (OFDM) Systems”
  30. Amit Kumar (2011): Implementation of Set Partitioning in Hierarchical Tree (SPIHT) Algorithms (Co-Supervisor: Mr. A. Pandey)
  31. Dheeraj Gupta (2011): Two-Dimensional Analytical Modeling and Simulation of Doping-Dependent Subthreshold Characteristics of Short-Channel Triple Material-Double Gate (TM-DG) MOSFETs (Co-Supervisor: Mr. A. Pandey)
  32. Manjeet Singh (2010): Analytical Modeling and Simulation of Subthreshold Characteristics of Triple Material-Double Gate (TM-DG) MOSFETs
  33. Ajay Singh (2010): Implementation of Canny Edge Detection Algorithm (Co-Supervisor: Mr. A. Pandey)
  34. Sumeet Kumar (2010): Implementation of Residual Excited Linear Predictive Vocodor using MATLAB (Co-Supervisor: Mr. A. Pandey)
  35. Vimal Gupta (2009): Analytical Modeling and Simulation of the Threshold Voltage of FD-SOI MOSFETs with a Vertical Gaussian Doping Profile
  36. Kanakadas Y(2005): Analytical Modeling and Simulation of Optically Controlled DCFL Inverter using GaAs E-MESFETs
  37. Ratnakar Subudhi (2003): Microwave Characterization of a GaAs Based Optically Controlled Metal Semiconductor Field Effect Transistor
  38. Manoj Thapliyal (2001): Design of a Signaling Management Scheme for DAMA Based SATCOM Networks
  39. Jayanta Mandal (2001): A Comparative Study of QPSK, Q2PSK and MSK Systems
  40. Seema Jaiswal (1999): Safety Critical Real Time Systems for Railways Signaling
  41. N. S. Rana (1998): Design and Implementation of 8-Bit Trellis Code Modulators

 

1. Title: Low-Voltage Low-Power Logic Circuit Design Using E-MESFETs for VLSI Applications.

Principal Investigator: Prof. B. B. Pal
Co-Investigator: S. Jit and R. U. Khan
Sponsored by AICTE, 2002-04
Status: Completed
 

2. Title: Analysis and Simulation of Photodetectors for Mid-infrared Applications

Principal Investigator: Prof. P. Chakrabarti
Co-Investigator: Prof. S. Jit
Sponsored by CSIR, 2006-09
Status: Completed
 

3. Title: Modeling and Simulation of Advanced Nano-Scaled CMOS Devices

Principal Investigator: Prof. S. Jit
Sponsored Agency: IIT(BHU), Varanasi (2015-17)
Status: Completed
 

4.    Solution Processed Nanocrystal Quantum Dot Heterojunction based Tandem Solar Cells
       

Principal Investigator: Prof. S. Jit
Sponsored Agency: Centre for Energy Resources and Development (CERD), IIT(BHU) (2016-18)
Status: On-going
 

5. Title: Development of Polymer and Doped Quantum Dots Blended Tandem Solar Cells Using Low-Cost
            Solution Processed Method

Principal Investigator: Prof. S. Jit
Sponsored Agency: SERB, DST, Govt. of India (2017-2020)
Status: On-going
 

6. Title: Special Manpower Development Project for System to Chip Design (SMDP-C2SD) (National Level Project)

Chief Investigator: Prof. S. Jit
Co-Chief Investigator: Dr. Kishor P. Sarawadekar
Sponsored Agency: DeitY, Govt. of India  (2016-2020)
Status: On-going
 

Total No. of Publications:      218 (Journal Publications: 130 + Conference Publications: 88)
___________________________________________________________
Papers published in the IEEE Journals:                37
Paper published in non-IEEE Journals:                 93
Papers published in Conference Proceedings:     88

Books Published/Edited:                                         05 
Guest Editor of Int. Journal:                                    01
___________________________________________________________

A.  List of Peer Reviwed Journal Publications

Papers Published in the IEEE Journals:

  1. Rishibrind Kumar Upadhyay, Abhinav Pratap Singh, Deepchandra Upadhyay, Smrity Ratan, Chandan Kumar, and S. Jit, “High-Performance Photodetector Based on Organic-Inorganic Perovskite CH3NH3PbI3/ZnO Heterostructure,” IEEE Photonic Technology Letters (Accepted)
  2. D. Gola, B. Singh, J. Singh, S. Jit and P K Tiwari, "Static and Quasi-Static Drain Current Modeling of Tri-Gate Junctionless Transistor with Substrate Bias Induced Effects," IEEE Trans. Electron Devices, Vol. 66 (7), pp. 2876-2883, 2019
  3. Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, and S. Jit, “Effects of Optical Resonance on the Performance of Metal (Pd, Au)/CdSe Quantum Dots (QDs)/ ZnO QDs Optical Cavity Based Spectrum Selective Photodiodes,” IEEE Trans. Nanotechnology, Vol. 18, pp. 365-373, 2019
  4. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “Electrical and Optical Characteristics of PQT-12 Based Organic TFTs Fabricated by Floating-Film Transfer Method,”  IEEE Trans. Nanotechnology, Vol. 17 (6), pp.1111-1117, 2018
  5. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “"Electrical and Ammonia Gas Sensing Properties of PQT-12/CdSe Quantum Dots Composite Based Organic Thin Film Transistors," IEEE Sensors Journal, Vol. 18, pp. 6085-6091, 2018
  6. Y. Kumar, H. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Spectrum Selectivity and Responsivity of  ZnO Nanoparticles Coated  Ag/ZnO QDs/Ag UV photodetectors,” Photonics Technology Letters, Vol 30, pp.1147-1150, 2018.
  7. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “Poly (3, 3’’’-dialkylquaterthiophene) Based Flexible Nitrogen Dioxide Gas Sensor,” IEEE Sensors Letters, Vol 2, pp. 2475-1472, 2018.
  8. A. Tripathi, H. P. Gupta, T. Dutta, R. Mishra, K.K. Shukla and S. Jit, “Coverage and Connectivity in WSNs: A Survey, Research Issues and Challenges,” IEEE Access, Vo. 6, pp. 26971 – 26992, June 2018.
  9. A. Tripathi, H. P. Gupta, T. Dutta, D. Kumar, S. Jit, and K. K. Shukla, “A Target Tracking System Using Directional Nodes in Wireless Sensor Networks,” IEEE Systems Journal, Vol. 13, 1618-1627, June 2019
  10. S. Ratan, C. Kumar, A. Kumar, D. K. Jarwal, A. K. Mishra, and S. Jit, “Fabrication and Characterization of Titanium Dioxide Based Pd/TiO2/Si MOS Sensor for Hydrogen Gas,” IEEE Sensors Journal, Vol. 18, pp. 3952-3959, 2018  DOI: 10.1109/JSEN.2018.2819805
  11. Sanjay Kumar, Kunal Singh, Sweta Chander, Ekta Goel, Prince Kumar Singh, Kamalaksha Baral, Balraj Singh, and S. Jit, “2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs with a SiO2/HfO2 Stacked Gate-Oxide Structure,” IEEE Trans. Electron Devices, Vol.: 65, pp. 331-338, 2018.
  12. Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, and S. Jit, “Heating Effects of Colloidal ZnO Quantum Dots (QDs) on ZnO QDs/CdSe QDs/MoOx Photodetectors,” IEEE Trans. Nanotechnology, Vol. 16, pp. 1073-1080, 2017.
  13. H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Colloidal CdSe Quantum Dots and PQT-12 Based Low-Temperature Self-Powered Hybrid Photodetector,” IEEE Photonics Technology Letters, Vol. 29, No. 20, pp. 1715 - 1718, 2017.
  14. Y. Kumar, H. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Visible-blind Au/ZnO Quantum dots based Highly Sensitive and Spectrum Selective Schottky Photodiode,” IEEE Trans. Electron Devices, Vol. 64, No. 7, pp. 2874 - 2880, July 2017.
  15. H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Electrical and Optical Characteristics of Self-Powered Colloidal CdSe Quantum Dot (QD) Based Photodiode,” IEEE J. Quantum Electronics, Vol. 53, pp. 4400108:1-8, 2017.
  16. G. Rawat, H. Kumar, Y. Kumar, C. Kumar, and S. Jit, “Effective Richardson Constant of Sol-Gel Derived TiO2 Films in n-TiO2/p-Si Heterojunctions," IEEE Electron Device Letters, Vol. 38, No. 5, pp. 633 - 636, 2017.
  17. S. Kumar,  E. Goel,  K. Singh, B. Singh, P. K. Singh, K. Baral  and  S. Jit, “2D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs with a SiO2/HfO2 Stacked Gate-Oxide Structure,” IEEE Trans. Electron Devices, Vol 64, No. 3, pp. 960-968,  March 2017.
  18. B. Singh, D. Gola, K. Singh, E. Goel, S. Kumar and S. Jit, “Two-Dimensional Analytical Threshold Voltage Model for Dielectric Pocket Double-Gate Junctionless FETs by Considering Source/Drain Depletion Effect,” IEEE Trans. Electron Devices, Vol 64, No. 3, pp. 901 - 908, 2017.
  19. Y. Kumar, H. Kumar, G. Rawat, C. Kumar, A. Sharma, B. N. Pal and S. Jit, "Colloidal ZnO Quantum Dots Based Spectrum Selective Ultraviolet Photodetectors" IEEE Photonics Technol. Lett., Vol. 29, No. 4, pp. 361 - 364, 2017.
  20. G. Rawat, D. Somvanshi, Y. Kumar, H. Kumar, C. Kumar and S. Jit, “Electrical and Ultraviolet-A Detection Properties of E-Beam Evaporated n-TiO2 Capped p-Si Nanowires Heterojunction Photodiodes”,  IEEE Trans. Nanotechnology, Vol. 16, No. , pp. 49 - 57, Jan. 2017.
  21. S. Kumar, E. Goel, K. Singh, B. Singh, M. Kumar and S. Jit, “A Compact 2D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors with a SiO2/High-k Stacked Gate-Oxide Structure”, IEEE Transactions on Electron Devices, Vol 63, No. 8, pp. 3291-3299, 2016.
  22. M. Kumar, S. Kumar, E. Goel, K. Singh, B. Singh, and S. Jit, “Strain-Induced Plasma Radiation at Terahertz Domain in Strained-Si-on-Insulator MOSFETs”, IEEE Trans. on Plasma Science, Vol. 44, No. 3, pp. 245-249, 2016.
  23. G. Rawat, D. Somvanshi, H. Kumar, Y. Kumar, C. Kumar and S. Jit, “Ultraviolet Detection Properties of p-Si/n-TiO2 Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol-Gel Methods: A Comparative Study," IEEE Trans. Nanotechnology, Vol. 15, No. 2, pp. 193-200, 2016.
  24. E. Goel, S. Kumar, K. Singh, B. Singh, M. Kumar, and S. Jit, “2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs”, IEEE Transactions on Electron Devices, Vol 63, No. 3, pp. 966-973, 2016.
  25. B. Singh, D. Gola, K. Singh, E. Goel, S. Kumar and S. Jit, “Analytical Modeling of Channel Potential and Threshold Voltage of Double Gate Junctionless Field Effect Transistors with a Vertical Gaussian-Like Doping Profile”, IEEE Transactions on Electron Devices, Vol 63, No. 6, pp. 2299-2305, 2016.
  26. M. Kumar, and S. Jit, “A Novel Four-Terminal (4T) Ferroelectric Tunnel FET (Fe-TFET) for Quasi-Ideal Switch,” IEEE Trans. Nanotechnology (under Letters category), Vol. 14, No. 4, pp.600-602, 2015.
  27. M. Kumar, and S. Jit, ”Effects of Electrostatically Doped Source/Drain and Ferroelectric Gate Oxide on Subthreshold Swing and Impact Ionization Rate of Strained-Si-on-Insulator Tunnel Field Effect Transistors,” IEEE Trans. Nanotechnology (under Letters category), Vol. 14, No. 4, pp. 597-599, 2015.
  28. A. B. Yadav, A. Pandey, D. Somvanshi and S. Jit, “Sol-Gel Based High Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodetectors,” IEEE Trans. Electron Devices, Vol. 62, No. 6, pp. 1879-1884, 2015.
  29. D. Somvanshi and S. Jit, “Effect of ZnO Seed Layer on the Electrical Characteristics of Pd/ZnO Thin Film based Schottky Contacts Grown on n-Si Substrates,” IEEE Trans. Nanotechnology, Vol.13(6),pp.1138-1144, 2014.
  30. D. Somvanshi and S. Jit, “Analysis of Temperature Dependent Electrical Characteristics of n-ZnO Nanowires(NWs)/p-Si Heterojunction Diodes," IEEE Trans. Nanotechnology, Vol.13, pp.62-69, 2014.
  31. D. Somvanshi and S. Jit, "Effects of Sn and Zn Seed Layers on the Electrical Characteristics of Pd/ZnO Thin Film Schottky Diodes Grown on n-Si Substrates," IEEE Electron Device Letters, Vol.35(9), pp.945-947, 2014.
  32. D. Somvanshi and S. Jit, "Pd/ZnO Nanoparticles Based Schottky Ultraviolet Photodiodes Grown on Sn Coated n-Si Substrates by Thermal Evaporation Method," IEEE J. Selected Topics in Quantum Electronics, Vol. 20 (6), pp. 3803106:1-6, 2014.
  33. A. B. Yadav, A. Pandey and S. Jit, “Pd Schottky Contacts on Sol-Gel Derived ZnO Thin Films with Nearly Ideal Richardson Constant,” IEEE Electron Device Letters, Vol. 35, pp. 729-730, July 2014.
  34. D. Somvanshi and S. Jit, “Mean Barrier Height and Richardson Constant for Pd/ZnO Thin Film Based Schottky Diodes Grown on n-Si Substrates by Thermal Evaporation Method,” IEEE Electron Device Letters, Vol.34(10), pp.1238-1240, 2013.
  35. S. Jit, Aruna Bandara Weerasekara, Ranga Chaminda Jayasinghe, Steven G. Matsik, A. G. Unil Perera, Margaret Buchanan, G. Irwin Sproule, H. C. Liu, Andreas Stintz, Sanjay Krishna, S. P. Khanna, M. Lachab, and E. H. Linfield, “Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors,” IEEE Electron Device Letters, vol. 29, pp. 1090-1093, Oct. 2008.
  36. P. Pandey, B. B. Pal, and S. Jit “A New Two-Dimensional Analytical Model for Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel  Si-SOI-MESFET’s,”   IEEE Trans. Electron Devices, vol. 51, pp. 246-254, Feb. 2004.
  37. S. Jit and B. B. Pal, “A New Optoelectronic Integrated Device for Light Amplifying Optical Switch,” IEEE Trans. Electron Devices, vol. 48, pp.2732-2739, Dec.2001.

Papers Published in Non-IEEE Journals with Impact Factor Greater than 03:

  1. S. K. Yadav, G. Rawat, S. Pokharia, S. Jit, and H. Mishra, “Excited-State Dynamics of Quinine Sulphate and Its Di-Cation Doped in Polyvinyl Alcohol Thin Films Near Silver Nanostructure Islands,” ACS Omega, Vol. 4, pp.5509-5516, 2019
  2. A. Sharma, N. Chaurasia, S. Anumol, Y. Kumar, S. Jit, A. Pandey and B N Pal, “Solution Processed Li5AlO4 dielectric for low voltage transistor fabrication and its application for metal oxide/quantum dot heterojunction phototransistor,” Journal of Materials Chemistry C (RSC), Vol 6, pp 790-798, 2018 DOI: 10.1039/C7TC05074G (IF: 5.726)
  3. Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakashb and S. Jit, “Flexible poly (3, 3'''- dialkylquaterthiophene) based interdigitated metal-semiconductor-metal ammonia gas sensor,” Sensors and Actuators: B. Chemical, Vol. 255, Part 1, pp. 203-209, 2017 (IF: 5.401)
  4. S. Gopal, P. Maity, Y. kumar, H. Kumar, V. Gangwar, S. Chatterjee, S. Jit, A. K. Ghosh, and B. N. Pal, “Single Quantum Dot Rectifying Diode With Tunable Threshold Voltage,” Journal of Materials Chemistry C., Vol. 5, pp. 9792-9798, 2017 (DOI: 10.1039/c7tc02537h) (IF: 5.256)
  5. Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakashb and S. Jit, “Electrical and ammonia gas sensing properties of poly (3, 3‴- dialkylquaterthiophene) based organic thin film transistors fabricated by floating-film transfer method,” Organic Electronics, Vol. 48, pp. 53 – 60, 2017 (IF: 3.399)
  6. A. B. Yadav and S. Jit, “Particle Size effects on the Hydrogen Sensing Properties of Pd/ZnO Schottky Contacts Fabricated by Sol-gel Method,” Int. J. Hydrogen Energy, Vol. 42, pp.786-794, 2017 (IF: 3.582)
  7. Hemant Kumar, Yogesh Kumar; Gopal Rawat; Chandan Kumar; Bratindranath Mukherjee; Bhola Nath Pal; S. Jit, “Electrical and Optical Characteristics of Solution processed MoOx and ZnO QDs Heterojunction,” MRS Communications, Vol. 7, Issue 3, pp. 607-612, September 2017 (IF: 3.01)

Papers Published in Other International Journals:

  1. S Chander, S Baishya, S Kumar, P K Singh, K Baral, M R Tripathy, A K Singh and S Jit, “Two-Dimensional Analytical Modeling for Electrical Characteristics of Ge/Si SOI-Tunnel FinFETs,” Superlattices and Microstructures (Accepted)
  2. Ashwini Kumar Mishra, Bratindranath Mukherjee2, Amit Kumar1, Deepak Kumar Jarwal, Smrity Ratan, Chandan Kumar, and Satyabrata Jit, “Superficial fabrication of gold nanoparticles modified CuO nanowires electrode for non-enzymatic glucose detection,” RSC Advances, Vol. 9, pp.1772 – 1781, 2019
  3. A. Tripathi, H. P. Gupta, K.K. Shukla, S. Jit, and T. Dutta, “Performance Evaluation of Routing Protocols for Ad-hoc Networks with Mobility Variation,” J. Nanoelectronics and Optoelectronics (Accepted)
  4. Shaivalini Singh, Pramod Kumar Tiwari, Hemant Kumar, Yogesh Kumar, Gopal Rawat, Sanjay Kumar, Kunal Singh, Ekta Goel, S. Jit and Si-Hyun Park, “Theoretical and Experimental Study of UV Detection Characteristics of Pd/ZnO Nanorod Schottky Diodes,” Nano, 12: 1750137(8), 2017.
  5. S. Chander, S. K. Sinha, S. Kumar, P. Singh, K. Baral, K. Singh and S. Jit, “Temperature Analysis of Ge/Si Heterojunction SOI-Tunnel FET,” Superlattices and Microstructures, Vol. 110, 162-170, 2017. DOI: 10.1016/j.spmi.2017.08.048
  6. K. Singh, S Kumar, E Goel, B Singh, P K Singh, K Baral, H Kumar, and S Jit , “ Effects of Source/Drain Elevation and Side Spacer Dielectric on Drivability Performance of Non-Abrupt Ultra Shallow Junction Gate Underlap GAA MOSFETs,” Indian Journal of Physics,  Vol. 92, pp 171–176, 2018
  7. Balraj Singh, Trailokya Nath Raia, Deepti Gola,  Kunal Singh, Ekta Goela, Sanjay Kumar, Pramod Kumar Tiwari, S. Jit, “Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure,” Materials Science in Semiconductor Processing, Vol. 71, pp. 161–165, 2017.
  8. Amritanshu Pandey, Archana Tripathi, Raghavi, S.K. Srivastava and S. Jit, “Analysis of Ternary Layer Photonic Band Gap Tunable Filters for WDM Applications, J. Nanoelectronics and  Optoelectronics, Volume 12, pp. 331-336, 2017
  9. S. Singh, Y. Kumar, H. Kumar, S. Vyas, C. Periasamy, P. Chakrabarti, S. Jit, and Si-Hyun Park, “A study of hydrothermally grown ZnO nanorod-based metal-semiconductor metal UV detectors on glass substrates,” Nanomaterials and Nanotechnology, Vol 7, pp. 1-5, 2017.
  10. Shaivalini Singh, S. Jit, and Si-Hyun Park, “Characterization of Ag/ZnO Nanorod Schottky Diode-based Low-voltage Ultraviolet Photodetector,” Nano (World Scientific), Vol. 12, pp. 1-7, 2017.
  11. Ekta Goel, Sanjay Kumar, Balraj Singh, Kunal Singh, S. Jit, “Two-dimensional Model for Subthreshold Current and Subthreshold Swing of Graded-Channel Dual-Material Double-Gate (GCDMDG) MOSFETs,” Superlattices and Microstructures, Vol.106, pp. 147-155, 2017
  12. E. Goel, K. Singh, B. Singh, S. Kumar, and S. Jit, “2-D Analytical Modeling of Subthreshold Current and Subthreshold Swing for Ion-Implanted Strained-Si Double-Material Double-Gate (DMDG) MOSFETs,” Indian Journal of Physics, Vol. 91, Issue 9, pp 1069–1076, 2017.
  13. B. Singh, D. Gola, K. Singh, E. Goel, S. Kumar, and S. Jit, “Analytical Modeling of Subthreshold Characteristics of Ion-Implanted Symmetric Double Gate Junctionless Field Effect Transistors”, Materials Science in Semiconductor Processing, Vol. 58, pp.82-88, 2017.
  14. Hemant Kumar, Yogesh Kumar, Kunal Singh, Sanjay Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, S. Jit, “Kink Effect in TiO2 Embedded ZnO Quantum Dot based Thin Film Transistors”, IET Electronics Letters, vol. 53 no. 4, pp. 262 – 264, 2017.
  15. E. Goel, B. Singh, S. Kumar, K. Singh, and S. Jit, “Analytical Threshold Voltage Modeling of Ion-Implanted Strained-Si Double-Material Double-Gate (DMDG) MOSFETs,” Indian Journal of Physics, vol. 91 no. 4, pp. 383 – 390, 2017.
  16. K. Singh, M. Kumar, Ekta Goel, S. Kumar, K. Singh, B. Singh and S. Jit, “Effects of Elevated Source/Drain and Side Spacer Dielectric on the Drivability Optimization of Non-Abrupt Ultra Shallow Junction Gate Underlap DG MOSFETs,” Journal of Electronic Materials (JEMS), vol. 46 no. 1, pp. 520–526, 2017.
  17. K. Singh, M. Kumar, Ekta Goel, S. Kumar, K. Singh, B. Singh and S. Jit, “Subthreshold Current and Swing Modeling of Gate Underlap DG MOSFETs with Source/Drain Lateral Gaussian Doping Profile,” Journal of Electronic Materials (JEMS), vol. 46 no. 1, pp. 579–584, 2017.
  18. K. Singh, M. Kumar, E. Goel, B. Singh, S. Dubey, S. Kumar, and S. Jit, “Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile”, Journal of Electronic Materials, Vol 45, No. 4, pp. 2184-2192, 2016
  19. S. Tiwari,  Ashutosh K. Dikshit, S. Jit, and P C Pandey, “Highly Sensitive Biochemical Sensor Based on Photonic Crystal Ring Resonator,” Optoelectronics and Advanced Materials –Rapid Communications, Vol. 10, pp. 509-513, 2016
  20. P. K. Tiwari, V. R. Samoju, T. Sunkara, S. Dubey, S. Jit, “Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs),”  J. Computational ElectronicsVol. 15 (2), pp 516-524, 2016  
  21. B. Singh, D. Gola, E. Goel, S. Kumar, K. Singh and S. Jit, “Dielectric Pocket Double Gate Junctionless FET: A New MOS Structure with improved Subthreshold Characteristics for Low Power VLSI Applications,” J. Computational Electronics, 15(2), 502-507, 2016
  22. A. Pandey, D. Somvanshi and S. Jit, “Electrical and
    Ultraviolet Detection Properties of n-ZnO Thin film/p-Si Heterojunction Diodes Using a ZnO Buffer Layer,” Journal of Nanoelectronics and Optoelectronics, Vol.10, pp. 219-225, April 2015
  23. Amritanshu Pandey, Snehlata Chanchal and S Jit, “WO3 Nanowire based Diode for Ultraviolet Light Sensing Applications,” Journal of Electron Devices, Vol. 21, pp. 1830-1833, 2015
  24. Purnima Hazra, S. K. Singh and S. Jit, “Impact of Surface Morphology of Si Substrate on Performance of Si/ZnO Heterojunction Devices Grown by ALD Technique,” J. Vac. Sc. Technol., Vol. A 33(1), pp. 01A114:1-5, 2015
  25. Visweswara Rao Samoju, S. Jit, and Pramod Kumar Tiwari, “A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate MOSFETs,” Chin. Phys. Lett. Vol. 31(12), pp.128502:1-3, 2014
  26. Gopal Rawat, Mirgender Kumar and S. Jit, “Analytical Modeling of Threshold Voltage of Ion-Implanted Strained-Si-on-Insulator (SSOI) MOSFETs,” Journal of Nanoelectronics and Optoelectronics, Vol. 9(3), pp. 442-448, June 2014.
  27. Gopal Rawat, Mirgender Kumar and S. Jit, “Analytical Modeling of Subthreshold Current and Subthreshold Swing of Gaussian-Doped (GD) Strained-Si-on-Insulator (SSOI) MOSFETs,” Journal of Semiconductors, Vol. 35(8), pp. 084001:1-8, 2014.
  28. Divya Somvanshi and S. Jit, “Analysis of I-V Characteristics of Pd/ZnO thin film/n-Si Schottky Diodes with Series Resistance,” Journal of Nanoelectronics and Optoelectronics, Vol.9(1), pp.21-26, 2014.
  29. Aniruddh Bahadur Yadav, Amritanshu Pandey and S. Jit, “Effects of Annealing Temperature on the Structural, Optical and Electrical Properties of ZnO Thin Films Grown on n-Si<100> Substrates by the Sol-Gel Spin Coating Method,” Acta Metallurgica Sinica (English Letters): Volume 27, pp. 682-688, 2014.
  30. Purnima Hazra, S. K. Singh and S. Jit “Ultraviolet photodetection properties of ZnO/Si heterojunction diode fabricated by ALD technique without using a buffer layer”, Journal of Semiconductor Technology and Science, Vol. 14, No. 1, pp. 117-123, 2014.
  31. Purnima Hazra and S. Jit, “p-Silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation technique”, Journal of Semiconductors, Vol. 35, No. 1, 014001, 2014.
  32. Abirmoya Santra, Mirgender Kumar, Sarvesh Dubey, S. Jit and Pramod Kumar Tiwari,  “Analytical modeling of threshold voltage of stacked Triple-Material-Gate (TMG) Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs,” Journal of Active and Passive Electronic Devices, Vol. 9, no 2-3, pp.235-257, 2014.
  33. Gopi Krishna S.,  Abirmoya Santra, Mirgender Kumar, Sarvesh Dubey, S. Jit,  Pramod Kumar Tiwari, “Analytical subthreshold current and subthreshold swing models for a short-channel dual-metal-gate   (DMG) fully depleted recessed-source/drain  (Re-S/D) SOI MOSFET,” Journal of Computational Electronics, Vol. 13, pp.467-476, 2014.
  34. Aniruddh Bahadur Yadav, Amritanshu Pandey and S. Jit, “Annealing-Temperature Effects on the Properties of ZnO Thin Films and Pd/ZnO Schottky Contacts Grown on n-Si (100) Substrates by Vacuum Deposition Method,” Superlattices and Microstructures, Vol. 71, pp. 250-260, 2014.
  35. Aniruddh Bahadur Yadav, C.Periasamy, Sudipta Bhaumik and S. Jit, “Room- Temperature Hydrogen Gas Sensing Properties of Pd/ZnO Thin Films Grown on n-Si<100> Substrates by Thermal Evaporation and Sol-Gel Techniques: A Comparative Study,” Indian Journal of Pure and Applied Physics, Vol.51, pp.792-799, November 2013.
  36. Divya Somvanshi, Amritanshu Pandey and S. Jit, “Ultraviolet Detection Characteristics of Pd/n-ZnO Thin Film Schottky Photodiodes Grown on n-Si Substrates,” Journal of Nanoelectronics and Optoelectronics, Vol. 8, pp. 349-354,2013.
  37. Sarvesh Dubey, A. Mirgender Kumar, Pramod Kumar Tiwari, and S. Jit, “Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs with Localized Charges,” Journal of Computational and Theoretical Nanoscience, Vol. 11(1), pp. 165-172, 2014.
  38. Purnima Hazra and S. Jit, “An In-House Approach for Fabrication of Silicon Nanowire
    Arrays using Electroless Metal Deposition and Etching Method,” International Journal of Surface Science and Engineering, Vol.7, No.3, pp.285 – 294, 2013.
  39. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “Analytical Models of Subthreshold Current and Swing of Short-Channel Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs,” Superlattices and Microstructures, Vol. 58, pp. 1-10, 2013.
  40. Purnima Hazra and S. Jit, “Studies on ZnO/Si heterojunction diode Grown by ALD Technique,” Journal of Nanoelectronics and Optoelectronics, Vol. 8, No. 4, pp. 378-382, 2013.
  41. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “Analytical Modeling and Simulation of Subthreshold Characteristics of Back-Gated SSGOI and SSOI MOSFETs: A Comparative Study,” Current Applied Physics, Vol.13, pp.1778-1786, 2013.
  42. Purnima Hazra and S. Jit, “p-Si Nanowires/n-ZnO Thin Film Based Core-Shell Heterojunction Diodes with Improved Effective Richardson Constant,” Journal of Nanoscience and Nanotechnology, Vol. 14, No. 7, pp. 5380-5385, 2014.
  43. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “Two-Dimensional Modeling of Subthreshold Current and Subthreshold Swing of Double-Material-Gate (DMG) Strained-Si (s-Si) on SGOI MOSFETs,” Journal of Computational Electronics, Vol.12, pp.275-80, 2013.
  44. Shantanu Sarangi, Shiv Bhushan, Abirmoya Santra, Sarvesh Dubey, Pramod Kumar Tiwari, and S. Jit, “A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs,” Superlattices and Microstructures,Vol.60, pp. 263-279, 2013.
  45. Gopi Krishna S., Abirmoya Santra, Sarvesh Dubey, S. Jit, and Pramod Kumar Tiwari, “An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed- source/drain (Re-S/D) SOI MOSFET” Superlattices and Microstructures, Vol.60, pp.580-595, 2013
  46. Sarvesh Dubey, P.K.Tiwari and S. Jit, “On-Current Modeling of Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian-like Doping Profile,” Journal of Semiconductors, Vol.34(5), 054001:1-8, 2013.
  47. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “An Analytical Model of Threshold Voltage for Short-Channel Double-Material-Gate (DMG) Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs,” Journal of Computational Electronics, Vol.12, pp.20-28, 2013.
  48. Shweta Tripathi and S. Jit, “Analytical Modeling of the Current (I)-Voltage (V) Characteristics of Sub-Micron Gate-Length Ion-Implanted GaAs MESFETs under Dark and Illuminated Conditions,” IET Circuits, Devices & Systems, Vol.7, pp.42-50, 2012.
  49. Shiv Bhushan, Santunu Sarangi, Abirmoya Santra , Mirgender Kumar, Sarvesh Dubey, S. Jit and P. K. Tiwari, “An analytical surface potential model for s-Si on SiGe MOSFET including the effects of interface charges,” Journal of Electron Devices, Vol. 15, pp. 1285-1290, 2012
  50. A. B. Yadav, C. Periasamy, P. Chakrabarti, and S. Jit, “Hydrogen gas sensing properties of Pd/nanocrystalline ZnO thin films based Schottky contacts at room temperature,” Adv. Sci. Eng. Med., Vol. 5, pp.112-118, 2013.
  51. Divya Somvanshi and S. Jit, “Fabrication and Characterization of ZnO Nanowires by Thermal Oxidation,” Advanced Materials Research, Vol.585, pp.124-128, 2012.
  52. Deepak Mishra, K. S. Dasgupta and S. Jit, “Efficient QPSK Burst Demodulator for Onboard Application”, International Journal of Computer Science and Information Technologies, Vol.3 (3), pp.4053-4058, 2012.
  53. Deepak Mishra, K S Dasgupta and S. Jit, “Concatenated Convolutional Codes for Deep Space mission”, International Journal of Information and Communication Technology Research,” Vol. 2 (6), pp. 512-518, June 2012.
  54. Deepak Mishra, K S Dasgupta and S.Jit, “Software Simulation of Unequal Error Protection Based Demodulator (Burst Mode) for Onboard Application”, International Journal of Computer Science and Information Technologies, Vol. 3 (4), pp.4670 – 4673, 2012.
  55. Pramod Kumar Tiwari, Sarvesh Dubey, Sarvesh  Dubey, Kunal Singh, and S. Jit, “Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs,” Superlattices and Microstructures, Vol. 51, pp. 715-724, 2012.
  56. Deepak Mishra, K S Dasgupta and S. Jit, “Hybrid Concatenated Convolutional Code for Deep Space Mission”, International Journal of Computer Applications, Vol. 47,  No.19, pp. 33-38, June 2011.
  57. Shweta Tripathi and S. Jit, “Transit-Time model for short-gate length ion-implanted GaAs OPFETs,” International Journal of Computer Applications (IJCA), (Special issues on International Conference on Electronics, Information and Communication Engineering (ICEICE), December 2011), pp.22-24, 2011.
  58. Pramod Kumar Tiwari and S. Jit, “A Threshold Voltage Model for  the Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile,  ”Journal of Nanoelectronics and Optoelectronics, Vol. 6, No. 2, pp. 207-213, June 2011.
  59. Pramod Kumar Tiwari, Sarvesh Dubey and S. Jit, “A Doping Dependent Threshold Voltage Model of Uniformly Doped Short-Channel Symmetric Double-Gate (DG) MOSFETs,” Journal of Nano- Electron. Phys., 3, No1, pp. 963-971, 2011.
  60. Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari and S. Jit, “Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (TM-DG) MOSFETs,” Journal of Nano- Electron. Phys. 3, No1, pp. 576-583, 2011.
  61. Shweta Tripathi and S. Jit, “A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs MESFETs Under Dark and Illuminated Conditions,” Journal of Nano- Electron. Phys. 3, No.1, 868-877, 2011.
  62. Pramod Kumar Tiwari and S. Jit, “Subthreshold Current Model for Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile,” Journal of Computational and Theoretical Nanoscience, 8, 1296-1303, 2011.
  63. Shweta Tripathi and S. Jit, “A Capacitance Model for the Optically Controlled Short-Gate Length GaAs MESFETs with a Vertical Gaussian-Like Doping Profile,” Journal of Electron Devices, vol.9, pp.352-261, March 2011.
  64.  Shweta Tripathi and S. Jit, “A Two-Dimensional (2D) Analytical Model for the Potential Distribution and Threshold Voltage of Short-Channel Ion-Implanted GaAs MESFETs under Dark and Illuminated Conditions,” Journal of Semiconductor Technology and Science, vol.11, pp.40-50, March 2011.
  65. Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “A 2D model for the subthreshold swing of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile,” Journal of Applied Physics, vol.109, 054508:1-7, 2011.
  66. Shweta Tripathi and S. Jit, “Analytical model for Capacitance of Ion-Implanted short channel GaAs MESFET under Dark and Illuminated Condition,” Journal of Applied Physics, vol. 109, pp.053102:1-10, 2011.
  67. Sarvesh Dubey, Pramod Kumar Tiwari,  and S. Jit, “A 2D model for the potential distribution and threshold voltage of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile,” Journal of Applied Physics, vol.108, pp.034518:1-7, 2010.
  68. Pramod Kumar Tiwari, Sarvesh Dubey, Manjeet Singh and S. Jit, “A two-dimensional analytical model for threshold voltage of short-channel triple-material double gate (TM-DG) MOSFETs,” Journal of Applied Physics, vol.108, pp.074508:1-8, 2010.
  69. Pramod Kumar Tiwari and S. Jit, “Threshold voltage model for symmetric double-gate (DG) MOSFETs with non-uniform doping profile,” Journal of Electron Devices, vol. 7, pp.241-249, 2010.
  70. Pramod Kumar Tiwari and S. Jit, “A Doping-Dependent Subthreshold Current Model for Short-Channel Symmetric Double-Gate (DG) MOSFETs,” Journal of Nanoelectronics and Optoelectronics, vol.5, pp.82-88, 2010.
  71. Pramod Kumar Tiwari, Chinmaya Ranjan Panda, Anupam Agarwal, Prateek Sharma and S. Jit, “Modelling of Doping Dependent Subthreshold Swing of  Symmetric Double-Gate (DG) MOSFETs,” IET Circuits, Devices and Systems, vol.4, pp.337-345, 2010.
  72. Pramod Kumar Tiwari   and   S. Jit, “A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping,” Journal of Semiconductor Technology and Science, vol.10, pp.107-117, 2010.
  73. Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile,” Journal of Nanoelectron. Optoelectron., vol. 5, pp.332-339, 2010.
  74. S. Jit, Prashant Kumar Pandey, Pramod Kumar Tiwari, “Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs,” Solid-State Electronics, vol. 53, pp. 57-63, 2009.
  75. Neti V.L.Narasimha Murty and S. Jit, “A new Semi-empirical Model for the Backgating Effect on the Depletion Width Modulation in GaAs MESFET’s,” IEEK-Journal of Semiconductor Technology and Science(JSTS), vol.08, pp. 104-109, 2008
  76. Neti. V. L. Narasimha Murty and S. Jit, “Analytical Modeling of Photo-Effects on the S-Parameters of GaAs MESFET’s,” Microwave and Optical Technology Letters, vol.48, pp.150-155, 2006.
  77. S. Jit and Neti V. L. Narasimha Murty, “Analytical Study of the Photo-Effects on Common-Source and Common-Drain Microwave Oscillators using High Pinch-Off n-GaAs MESFET’s,” Microelectronics Journal, vol.37, pp.452-458, 2006.
  78. Neti. V. L. Narasimha Murty and  S. Jit, “A Photo Dependent Capacitance Model of High Pinch-off GaAs MESFET’s,” Physica Status Solidi (a), vol. 203, pp.1005-1017, 2006.
  79. Neti. V. L. Narasimha Murty and S. Jit, “Static I-V Characteristics of Optically Controlled GaAs MESFET’s with Emphasis on Substrate Induced Effects,” IEEK- Journal of Semiconductor Technology and Sciences (JSTS), vol. 6, pp.210-224, Sept 2006.
  80. Neti. V. L. Narasimha Murty and S. Jit, “A New Analytical Model for the Photonic Capacitances of GaAs MESFET’s with Emphasis on the Deep Level Traps and Backgating Effects,” Solid-State Electronics, vol. 50, pp.1716-1727, Nov 2006.
  81. S. Jit, P. Pandey, A. Kumar, and S.K.Gupta, “Modified Boundary Condition at  Si-SiO2 Interface for the Modeling of Threshold Voltage and Subthreshold Swing of Short-Channel SOI-MESFET’s,” Solid State Electronics, vol. 49, pp.141-143, 2005.
  82. S. Jit, G. Bandhawakar and B.B.Pal, “Analytical Modeling of a DCFL Inverter Using Normally-off GaAs MESFET’s Under Dark and Illuminated Conditions” Solid-State Electronics, vol. 49, pp. 628-633, 2005.
  83. S. Jit, Saurabh Morarka, and Saurabh Mishra, “A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short-Channel Ion-Implanted Silicon MESFET’s,” Journal of Semiconductor Technology and Science, vol. 5, pp.69-77, Sept. 2005.
  84. S. Jit, and B. B. Pal, “New Optoelectronic Integrated Device for Optically Controlled Microwave Oscillators,” IEE Proc.-Optoelectron., vol.151, pp. 177-182, June 2004.
  85. S. Jit, and B.B.Pal, “A Simple Analytical Model for the Study of Optical Bistabilit using Multiple Quantum Well p-i-n Diode Structure,” Journal of Semiconductor Technology and Science, vol. 4, pp. 63-73, March 2004.
  86. S. Jit, P. Pandey, and B.B.Pal,A New Two-Dimensional Model for the Drain-Induced Barrier Lowering of Fully Depleted Short-Channel SOI-MESFET’s,” Journal of Semiconductor Technology and Science, vol. 3, pp.  217-222, Dec. 2003

 
 
B.        Research Papers Published in Refereed Conference Proceedings:

  1. Yogesh Kumar, Hemant Kumar,  Gopal Rawat, Varun Goel, Chandan Kumar, Bhola Nath Pal, Satyabrata Jit, “Fabrication and characterization of Photojunction Field Effect Transistor”, International Confrence on Signal Processing and Communication, JIIT Noida, 2018
  2. Sanjay Kumar, Kunal Singh, Sweta Chander, Prince Kumar Singh, Kamalaksha Baral, and S. Jit, “Influence of localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs”, International Conferences for Convergence of Technology (I2CT), 7-8th April, Pune2018.
  3. Sanjay Kumar, Kamalaksha Baral, Sweta Chander, Prince Kumar Singh, Balraj Singh and S. Jit, “Performance Evaluation of Double Gate III-V Heterojunction Tunnel FETs with SiO2/HfO2 Gate Oxide Structure”, IEEE International Symposium on Devices, Circuits and Systems (ISDCS), 29th - 31st March IIST Shivpur, India 2018.
  4. Sanjay Kumar, P. K. Singh, Sweta Chander, Ashvini Rahangdale , K. Baral, and S. Jit, “Dual-Material Ferroelectric Stacked Gate SiO2/PZT SOI Tunnel FETs with Improved Performance: Design and Analysis, 5th International Conference on Signal Processing and Integrated Networks (SPIN)), @Amity university, Noida, 2018.
  5. Sanjay Kumar, Kunal Singh, Sweta Chander, Prince Kumar Singh, Kamalaksha Baral, and S. Jit, “Temperature Sensitivity Analysis of Double Gate Tunnel FETs with SiO2/HfO2 Stacked Gate Oxide Structure”, Nanotechnology for Instrumentation & measurement Workshop, NANOfIM ,India 2017.
  6. Sanjay Kumar, Ashvini Rahangdale, Sweta Chander, Prince Kumar Singh, Kamalaksha Baral, and S. Jit, “A Simulation Based Study for Electrical Characteristics of SOI TFETs With Ferroelectric Stacked Gate Oxide Structure”, 14th IEEE India Council International Conference (INDICON), IIT Roorkee ,India, 2017.
  7. Ekta Goel, Sanjay Kumar, Kunal Singh, Balraj Singh and S. Jit, “An Analytical Model for Threshold Voltage Roll-off of Graded-Channel Dual-Material Double-Gate MOSFETs” International Conference On Nanoscience and Nanotechnology (ICNN 2017) organized by Babasaheb Bhimrao Ambedkar University, Lucknow India during 22 – 24 September, 2017.
  8. Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, Satyabrata Jit, “Solution processed MoO2 and ZnO Heterojunction Electrical and Optical Characteristics”, Materials Research Society (MRS) SPRING MEETING & EXHIBIT, held in Phoenix, Arizona, U.S.A, April 17-21, 2017. DOI: https://mrsspring.zerista.com/poster/member/85249
  9. Yogesh Kumar, Hemant Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, Satyabrata Jit, “Mg Doping Effects on Optical and Electrical Properties of Solution-Processed ZnO Quantum Dots Based Thin Film Devices”, Materials Research Society (MRS) SPRING MEETING & EXHIBIT, held in Phoenix, Arizona, U.S.A, April 17-21, 2017. DOI: https://mrsspring.zerista.com/poster/member/85250
  10. Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakash and Satyabrata Jit, “Poly (3, 3'''- dialkylquaterthiophene) Based Organic Thin Film Transistor Under Green Light Illumination”, (Accepted), 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), will be held in Singapore on 2nd – 4th October 2017.
  11. Hemant Kumar, Yogesh Kumar, Bratindranath Mukherjee, Gopal Rawat, Chandan Kumar, Bhola Nath Pal, Satyabrata Jit “Effect of Electrode on Spectrum Selectivity and Photoresponse of the Colloidal-QD Based Schottky Photodiode” , (Accepted), MATERIALS RESEARCH SOCIETY 2017MRS Fall Meeting,  will be held at the Hynes Convention Center and Sheraton Boston Hotel in Boston, Massachusetts, USA during November 26-December 1, 2017.
  12. Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bhola Nath Pal, Satyabrata Jit, “Optical Characteristics of Solution Processed MoO2/ZnO Quantum Dots based Thin Film Transitor”, IEEE International Symposium on Nanoelectronic and Information Systems (IEEE-iNIS) held at ABV-IIITM, Gwalior, India, pp. 19-21, Dec. 2016.
  13. Yogesh Kumar, Hemant Kumar, Gopal Rawat, Chandan Kumar, Bhola.N Pal and S. Jit, “Electrical and optical characteristics of Pd/ZnO Quantum dots based Schottky Photodiode on n-Si”, IEEE International Symposium on Nanoelectronic and Information Systems (IEEE-iNIS), held at ABV-IIITM, Gwalior, India, pp. 214-217, Dec. 2016.
  14. Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bhola Nath Pal, Satyabrata Jit, “Electrical and Optical Characteristics of CdSe Quantum Dot based Schottky Diode”, 11th International Conference on Industrial and Information Systems (ICIIS 2016), held at IIT, Roorkee, India, pp. 3-4 Dec. 2016.
  15. Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakash, Satyabrata Jit “Photoresponse in Poly (3, 3'''-dialkylquarterthiophene) Based Metal-Semiconductor-Metal Structure”, in Optics & Photonics Taiwan, the International Conference (OPTIC 2016), held in Taipei, Taiwan during December 3-5, 2016.
  16. Purnima Hazra and S. Jit, “Fabrication and characterization of p-type silicon nanowire (SiNW)/n-type ZnO based core-shell heterostructures for optoelectronic applications”, IOP Conf. Ser.: Mater. Sci. Eng. 73 012092, 2015.
  17. Gopal Rawat, Hemant Kumar, Yogesh Kumar, Chandan Kumar, Divya Somvanshi and Satyabrata Jit, “Structural and Optical Characteristics of n-TiO2 Thin Films by Sol-Gel Method”, 12th IEEE India International Conference, (INDICON 2015), held at Jamia Millia Islamia, New Delhi, India, pp. 1-4, Dec. 2015.  
  18. Sanjay Kumar, Ekta Goel, M. Kumar, K. Singh and S. Jit, “Surface Potential based  Subthreshold Current Modeling of DG MOSFETs with Non-uniform Doping in the Vertical Direction”, 4th International Conference on Current Developments in Atomic,  Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March @ University of Delhi, Delhi.
  19. Ekta Goel, Sanjay Kumar, M. Kumar and S. Jit, “Two Dimensional Analytical Threshold Voltage Model of Strained Silicon Double-Gate (DG) MOSFETs with vertical Gaussian-like Doping Profile”, 4th International Conference on Current Developments in Atomic, Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March @ University of Delhi, Delhi.
  20. Mirgender Kumar, and S. Jit, “Negative Differential Conductivity based Strained-Si MOSFET for THZ Generation”, 4th International Conference on Current Developments in Atomic, Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March @ University of Delhi, Delhi.
  21. Yogesh Kumar, Hemant Kumar, K. Singh, Bhola N Pal and S Jit. “Optical Characterization of Sol-Gel deposited Zinc Oxide Thin Film” 4th International Conference on Current Developments in Atomic, Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March 2015, held at University of Delhi, Delhi.
  22. Hemant Kumar,Yogesh Kumar, K. Singh, Bhola N Pal and S Jit, “Ultra-Violet Detection Characteristics of MoO2/ZnO based Thin Film Sensor Grown on Al2O3/p-Si Substrates”, 4th International Conference on Current Developments in Atomic, Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March 2015, held at University of Delhi, Delhi.
  23. Deepti Gola, Balraj singh and S. Jit, “Performance Investigation of Short-channel Double-Gate Junctionless FET (DG-JLFET) with Gaussian Doping Profile” 4th International Conference on Current Developments in Atomic, Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March @ University of Delhi, Delhi.
  24. Piyush Kumar Pushkar, Sanjay Kumar, Kunal Singh, A P Singh, and S. Jit. “Analytical Modeling of Threshold Voltage of Strained-Si Double-Gate (DG) Tunnel-field-effect Transistors (TFETs)” 2nd International Conference on Nanotechnology (ICNT-2015)19th-22th Feb@ Haldia Institute of Technology. ISBN: 978-81-927756-2-3, pp 199-202, 2015.
  25. Neetu Singh, Ekta Goel, Piyush Kumar Pushkar, M Kumar and S. Jit, “Analytical Modeling and Simulation of Subthreshold Swing of Hetero-Gate-Dielectric (HGD) Silicon-on-Insulator (SOI) MOSFETs 2nd International Conference on Nanotechnology (ICNT-2015)19th-22th Feb@ Haldia Institute of Technology. ISBN: 978-81-927756-2-3, 2015.
  26. Abhinav Pratap Singh, Kunal Singh, Sanjay Kumar, Neetu Singh, and S. Jit, “Surface Potential based Threshold Voltage Model of High-k Double-Gate (DG) MOSFETs with Gaussian-like Doping Profile 2nd International Conference on Nanotechnology(ICNT-2015)19th-22th Feb@ Haldia Institute of Technology. ISBN: 978-81-927756-2-3, 2015.
  27. Purnima Hazra and S. Jit, “Electrical characteristics of Si/ZnO core-shell nanowire heterojunction diode”, Physics of Semiconductor Devices, ed. by V.K. Jain and A. Verma, Springer, pp. 673-675, 2014.
  28. Ashutosh Kumar Dikshit, P C Pandey, S Tiwari and S. Jit, “Tunable Resonator based photonic crystal optical switch” 2nd IEEE International Conference on Emerging Electronics (ICEE-2014), 3rd-6th Dec.@ Indian Institute of Science, Bengaluru.
  29. Varun Goel, Sanjay Sharma, Sanjay Kumar, and S. Jit, “Two Dimensional Analytical Model for Threshold Voltage of Graded-Channel SOI MOSFETs” 2nd IEEE International Conference on Emerging Electronics (ICEE-2014), 3rd-6th Dec.@ Indian Institute of Science, Bengaluru.
  30. Ashutosh Kumar Dikshit, P C Pandey, S Tiwari,  Amritanshu Pandey and  S. Jit, “Circular Resonator based Optical Switch, 12th IEEE International Conference on Fiber Optics and Photonics.13th-16th Dec.2014@ Dept. of Physics, IIT Kharagpur, India.
  31. Ekta Goel, Sanjay Kumar, Neetu Singh, M Kumar, and S. Jit, “Subthreshold Swing Model of Short-Channel High-k Gate Stack Double-Gate (DG) MOSFETs” National conference on Research and Innovations in Electronics & Communication Engineering (RIECE-2014) 10th-11th Oct. @ Noida Institute of Engineering and Technology, UP.
  32. Gopi Krishna Saramekala, S. Jit, and Pramod Kumar Tiwari, “ATLAS based simulation study of the electrical characteristics of dual-metal-gate (DMG) fully-depleted recessed-source/drain (RE-S/D) SOI MOSFETS” IEEE Conference ICAEE' 2014, VIT University Vellore, Jan 9-11, 2014.
  33. E. Goel, S. Kumar, G. Rawat, Mirgender Kumar, S. Dubey, S. Jit, “Two Dimensional Model for Threshold Voltage Roll-Off of Short Channel High-k Gate-Stack Double-Gate (DG) MOSFETs,” 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), @Amity university, Noida, Springer conference proceeding, pp. 193-196, 2014.
  34. S. Kumar, E. Goel, G. Rawat, Mirgender Kumar, S. Dubey, S. Jit, “Threshold Voltage Modeling of Short-Channel DG MOSFETs with Non-Uniform Doping in the Vertical Direction,” 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), @Amity university, Noida, Springer conference proceeding, pp. 263-266, 2014.
  35. G. Rawat, Mirgender Kumar, S. Dubey, S. Jit, “An Analytical Study of Ion Implanted Strained-Si on SOI MOSFETs for Optimizing Switching Characteristics,” 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), @Amity university, Noida, Springer conference proceeding, pp. 203-206, 2014.
  36. Gopal Rawat, Sanjay Kumar, Ekta Goel, Mirgender Kumar, Sarvesh Dubey and S. Jit, “An Analytical Study of Gaussian Doped Strained-Si on SOI MOSFETs for Optimizing Off-State Current”, International Conference on Nanoscience & Nanotechnology (ICNN-2013), held at Babasaheb Bhimrao Ambedkar University, Lucknow, India, 18th -20th  Nov., 2013.
  37. Sanjay Kumar, Ekta Goel, Gopal Rawat, Kunal Singh, Mirgender Kumar, Sarvesh Dubey and S. Jit, “Surface Potential Based Subthreshold Swing Modeling of Symmetric Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile”, International Conference on Nanoscience & Nanotechnology (ICNN-2013), held at Babasaheb Bhimrao Ambedkar University, Lucknow, India, 18th -20th  November, 2013.
  38. Ekta Goel, Sanjay Kumar, Gopal Rawat, Mirgender Kumar, Sarvesh Dubey and S. Jit, “An Analytical Model for Threshold Voltage Roll-off of Short-Channel DG MOSFETs with High-k Gate Stack”, International Conference on Nanoscience & Nanotechnology (ICNN-2013), held at Babasaheb Bhimrao Ambedkar University, Lucknow, India, 18th -20th  November, 2013.
  39. Ekta Goel, Gopal Rawat, Sanjay Kumar, Mirgender Kumar, Sarvesh Dubey and S. Jit, “Surface Potential Based Subthreshold Current Model of High-k Gate Stack Double-Gate (DG) MOSFETs”, International Conference on Nanotechnology (ICNT - 2013), held at HIT, Haldia, West Bengal, India, 25th -26th October, 2013.
  40. Sanjay Kumar, Ekta Goel, Gopal Rawat, Mirgender Kumar, Sarvesh Dubey and S. Jit, “Analytical Modeling of Subthreshold Swing Based on Surface Potential of Non-Uniformly Doped Double-Gate (DG) MOSFETs”, International Conference on Nanotechnology (ICNT – 2013), held at HIT, Haldia, West Bengal, India, 25th -26th October, 2013.
  41. E. Goel, Mirgender Kumar, S. Dubey and S. Jit, “A Threshold Voltage Model of High-k Gate Stack Short-Channel Double-Gate (DG) MOSFETs,” National Conference on Nanoscience and Instrumentation Technology, @NIT, Kurukshetra, March 28-29, 2013.
  42. Gopi Krishna S.,  Abirmoya Santra, S. Jit, and  Pramod Kumar Tiwari, “An analytical surface potential modeling of dual-metal-gate (DMG) recessed- source/drain (Re-S/D) SOI MOSFET,” International Conf. on Advanced Trends in Engineering and Technology, Dec 19-20, 2013, Jaipur, India, pp.160-163
  43. S. Kumar, Mirgender Kumar, S. Dubey and S. Jit, Analytical modeling of Surface Potential and Threshold Voltage of Non-uniformly doped Double-Gate (DG) MOSFETs, National Conference on Nanoscience and Instrumentation Technology, NIT, Kurukshetra, March 28-29, 2013.
  44. Purnima Hazra and S. Jit, “Study of n-ZnO/ p-SiNW heterostructures grown by thermal evaporation method,” AIP Conf. Proc. 1536, 529-530, 2013.
  45. Divya Somvanshi and S. Jit, “Catalyst free growth of ZnO nanorods by thermal evaporation method,” International Conference on Recent trends in Applied physics and Material Science (RAM-2013) held in the Govt. college of Engg. and Technology, Bikaner during Feb 01-02, 2013  (will be published in the AIP proceeding).
  46. Mirgender Kumar, S. Dubey, P. K. Tiwari, S. Jit, A Comparative Study of Short-Channel-Effects of strained-Si on Insulator (SSOI) and strained-Si on Silicon-Germanium-on-Insulator (SSGOI) MOSFETs, in International Conference on Electrical and Electronics Engineering (ICEEE-2013), @WCE conference proceeding, London, July 04-06, 2013.
  47. Mirgender Kumar, S. Dubey, P. K. Tiwari, and S. Jit, “Back Gated (BG) Strained-Si-on-Silicon-Germanium-on-Insulator (SSGOI) MOSFETs for Improved Switching Speed and Short-Channel-Effects (SCEs)”, in international conference on Recent Trends in Applied Physics and Material Science, @AIP conference proceeding, pp. 321-322, Bikaner, Feb 01-03, 2013.
  48. Mirgender Kumar, S. Dubey, P. K. Tiwari, and S. Jit, “Quantitative Performance Investigations of Back Gated Strained-Si-on-Insulator (SSOI) MOSFETs: Towards Double-Gate (DG) Operation”, in international conference on Nanoelectronics and Nano devices (ICNEND), @SNEM conference proceeding, Chennai, Jan. 21-22, 2013.
  49. Mirgender Kumar, S. Dubey, P. K. Tiwari and S. Jit, “A 2D Analytical Modeling Approach for Nanoscale Strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs by Evanescent Mode Analysis”, in International Conference on Communications, Devices and Intelligent Systems (CODIS), @ IEEE conference proceeding, Calcutta, December 28-29, 2012.
  50. Mirgender Kumar, S. Dubey, P. K. Tiwari and S. Jit, “An Analytical Modeling of Interface Charge Induced Effects on Subthreshold Current and Subthreshold Swing of strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs”, in International Conference on Computers and Devices for Communication (CODEC) @ IEEE conference proceeding, Calcutta, December 17-19, 2012.
  51. Mirgender Kumar, S. Dubey, P. K. Tiwari and S. Jit, “Analytical Study of Interface Charges Effect on Short Channel Effect of Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs”, in International Conference on Quantum, Nano and Micro Technologies (ICQNM), ©IARIA conference proceeding, Rome, August 19 - 24, 2012.
  52. Divya Somvanshi and S. Jit, “Synthesis and characterization of tin catalyzed ZnO nanoparticles grown on n-Si substrate by thermal evaporation method,” Proc. SPIE 8760, International Conference on Communication and Electronics System Design, 87600G, January 28, 2013; doi:10.1117/12.2010345 (International Conference on Communication and Electronic System Design (ICCESD-2013) in NIT Jaipur)
  53. Divya Somvanshi and S. Jit, “Fabrication and characterization of ZnO nanowires by thermal oxidation method,” International Conference on Advance in Materials Processing: Challenges and Opportunities (AMPCO-2012) held in IIT Roorkee, India during November 02-04, 2012.  (Published in the Advanced Materials Research, 585, pp 124-128, 2012.    (10.4028/www.scientific.net/AMR.585.124)
  54. Divya Somvanshi, P. Chakrabarti and S. Jit, “Tin catalyzed growth of ZnO nanoparticles,” International conference on Material Science and Technology (ICMST-2012) held in Kottayam Pala during June 10-14, 2012 (will be published in IOP proceeding).
  55. Mirgender Kumar, Sarvesh Dubey, P. K. Tiwari and S. Jit, "Analytical Modeling and ATLAS Based Simulation of the Surface Potential of Double-Material-Gate Strained-Si on Silicon-on-Germanium-on-Insulator (DMG-SGOI) MOSFETs” in Proc. IEEE International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT-2011), pp. 228-231 (December 17-19, 2011 at AMU, Aligarh).
  56. A. Santra, Sarvesh Dubey, Mirgender Kumar, Pramod Kumar Tiwari  and S. Jit “An Analytical Study of the Effect of Interface Charges on the Surface Potential of Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs” in Proc. National Conference on Emerging Trends in Electrical and Electronics Engineering (ETEEE-2011) pp.56-57 (November 26-27, 2011 at K.N.I.T., Sultanpur).
  57. Mirgender Kumar, Sarvesh Dubey, P. K. Tiwari and S. Jit, "Extremely Scaled EOT Bi-Layered High-k stacked Double-Material Double-gate Strained-Si MOSFET for High Performance Band-Edge (BE) CMOS Technology” in Proc. National symposium on Recent Advances in Nanosciences, Engineering & Technology  (RANET-2011) pp. 76 (November 19-20, 2011 at ABV-IIITM, Gwalior).
  58. H. Agnihotri, A. Ranjan, P. K. Tiwari, and S. Jit, “An analytical drain current model for  short-channel triple-material double gate MOSFETs,” Proc. 2011 IEEE Computer Society Annual Symposium on VLSI (ISVLSI),  pp. 327 – 328 (Published by IEEE Computer Society with ISSN :  2159-3469) (Conference held during July 4-6, 2011,  Chennai, India).
  59. Pramod Kumar Tiwari, Sarvesh Dubey, Manjeet Singh and S. Jit, “An Analytical Subthreshold Current Model for Triple Material Double Gate (TMDG) MOSFETs,” in Proc. International Conference on Electronics System-2011, pp.142-145, 2011 (ICES, January 7-9, 2011 at NIT Raurkela).
  60. Shweta Tripathi and S. Jit, "Analytical Modeling of Frequency Dependent Characteristics of an Ion-Implanted Short Channel GaAs OPFET" in Proc. International Conference on Electronics System-2011, NIT Rourkela, pp.135-138, 2011 (ICES, January 7-9, 2011 at NIT Raurkela).
  61. P. K. Tiwari, S. Dubey, and S. Jit, “Subthreshold swing model for asymmetric 3T double gate (DG) MOSFETs,” IEEE Conf. Proc. 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1796-1798, 2010 held at Shanghai, China, Nov. 01-04, 2010.
  62. Pramod K.Tiwari, Sarvesh Dubey and S. Jit, “Substhreshold current model for short-channel double-gate (DG) MOSFETs with vertical Gaussian doping profile,” Latest Trends on Circuits, Systems and Signals (4th International Conference on Circuits, Systems and Signals (CSS’10), Corfu Island, Greece, July 22-25, 2010), Published by the World Scientific and Engineering Academy and Society (WSEAS) Press, 2010, pp.27-34.
  63. Pramod Kumar Tiwari, Chinmaya Ranjan Panda, Anupam Agarwal, Prateek Sharma and S. Jit, “Analytical Modeling of Effective Conduction Path Effect (ECPE) on the Subthreshold Swing of DG-MOSFETs,” IEEE Conference Proceedings of the 2009 Spanish Conference on Electron Devices (CDE 2009), Feb 11-13, 2009, Santiago de Compostela, Spain, pp. 136-139.
  64. P.K. Tiwari,   S. Kumar,   S. Mittal,   V. Srivastava,   U. Pandey,  and S. Jit, “A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile,” IEEE Conference Proceedings of the International Conference on Multimedia, Signal Processing and Communication Technologies, 2009 (IMPACT '09). March 14-16, 2009, Aligarh Muslim University, India, pp. 52-55.
  65. S. Dubey, P. K. Tiwari, and S. Jit, “Analytical Modeling of 2D Channel Potential of DG MOSFETs with a Gaussian-Like Vertical Doping Profile,” Proc. of the 15th International Workshop on the Physics of Semiconductor Devices (IWPSD-2009), (Publisher: Excel India Publisher, New Delhi); December 15-19, 2009; Jamia Millia Islamia, New Delhi; pp.192-193.
  66. K.L. Sah, K. S. Dasgupta, and S. Jit, “Novel performance of QPSK modulator subsystem with matched filters for GSAT-4 satellite,” IEEE Conf. Proc. International Conference on Emerging Trends in Electronic and Photonic Devices & Systems (ELECTRO-2009), pp.281-284, 2009 (held at IT-BHU, Dec.22-24, 2009).
  67. S. Jit, A. B. Weerasekara,R.C. Jayasinghe, S. G. Matsik, and A. G. U. Perera, “An n-doped GaAs/AlGaAs multi-layered HEIWIP based terahertz photodetector,” IEEE Conf. Proc. National Workshop on Advanced Optoelectronic Materials & Devices (AOMD-2008),” pp.213-216, 2008 held at IT-BHU, Varanasi, India Dec.22-24, 2008.  
  68. Neti V. L. Narasimha Murty and S. Jit, “Photo-Effects on  Static I-V Characteristics of GaAs MESFET’s: Role of Deep Level Traps and Backgating,” International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS-2006), pp. C25-C27, Jan. 2-6, 2006, University of Calcutta, Kolkata, India.
  69. S. Jit and Ravish Sunny, “A New 2-D Analytical Model for the Potential Distribution and Threshold Voltage of Short-Channel SOI-MOSFET’s,” International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS-2006), pp.D16-D18, Jan. 2-6, 2006, University of Calcutta, Kolkata, India.
  70. Neti V. L. Narasimha Murty, and S. Jit, “An Analytical model for the S-parameters of Optically Controlled GaAs MESFET’s,” IEEE Conf. Proc. 2005 Spanish Conference on Electron Devices (IEEE Cat. No.05EX965), held at Tarragona, Spain,  Feb.2-5, 2005), Feb.2-5, 2005, pp. 103-106.
  71. Neti V. L. Narasimha Murty and S. Jit, “Analytical Modeling of Photo-Effects on the Frequency-Dependent Output Conductance of GaAs MESFET’s,” Physics of Semiconductor Devices (IWPSD-2005), Allied Publishers Pvt. Limited, Vol. 1, pp.125-128, 2005 (13th International Workshop on the Physics of Semiconductor Devices,  held during Dec. 13-17, 2005, New Delhi, India).
  72. P. Pandey, B.B.Pal, and S. Jit, “A New Two-Dimensional Analytical Model for the   Potential Distribution and Drain-Induced Barrier Lowering of Short-Channel Ion-Implanted Si-SOI-MESFET’s,” International Conference on  Computers and  Devices for Communication (CODEC-04) held during January 01-03, 2004  in Hyatt Regency  Kolkata,  Kolkata,  India, EDM-3, p.105.
  73. S. Jit, Saurabh Morarka and Saurabh Mishra, “A New 2-D Model for the Potential Distribution of Ion-Implanted Short-Channel Silicon MESFET’s,”  2004 Asia - Pacific Microwave Conference  (APMC’04)  held during Dec 15-18, 2004, Hotel Ashok, New Delhi,  India, p. 968.
  74. Prashant Pandey, Saurabh Morarka, Saurabh Mishra, B.B.Pal and S. Jit, “A Subthreshold Current Model for Short-Channel Si-SOI MESFET’s,”  2004 Asia-Pacific Microwave Conference (APMC’04) held during Dec 15-18, 2004, Hotel Ashok, New Delhi,  India, 1024.
  75. Neti.V.L.Narasimha Murty, and S. Jit, “A New Capacitance Model of Optically Controlled GaAs MESFET’s,” 2004 Asia-Pecific Microwave Conference (APMC’04) held during Dec 15-18, 2004, Hotel Ashok, New Delhi, India, p.1022.
  76. P. Pandey, B.B.Pal, and S. Jit, “A New Two-Dimensional Analytical Model for Threshold Voltage of Fully Depleted Short-Channel Si-SOI-MESFET’s,” Physics of Semiconductor Devices (IWPSD-2003), Narosa Publishing House, New Delhi, India, pp. 606-608.
  77. S. Jit, and B.B.Pal, “A Semi-Analytical Model for the Study of Optical Bistability using Multiple Quantum Well p-i-n Diode Structure,” Physics of Semiconductor Devices (IWPSD-2003), Narosa Publishing House, New Delhi, India, pp. 941-943.
  78. S. Jit and B.N. Tiwari, “Optically Controlled Microwave Oscillator using GaAs   MESFET’s,” Physics of Semiconductor Devices (IWPSD-2003), Narosa Publishing House, New Delhi, India, pp. 803-805.
  79. S. Jit, and B.B.Pal, “Light-Source Integrated OPFET (LSI-OPFET): A New Optoelectronic Integrated Device for Optically Tuned Microwave Oscillators,”  Proc. Photonics-2002, p.246, TIFR, Mumbai, Dec.16-18, 2002.
  80. G. Bandhawakar, S. Jit  and B.B.Pal, “An Analytical Model for Optically Controlled Inverter using Normally-off MESFET’s,”  Proc. SBMO/IEEE MTTS IMOC 2003, pp.683-688.
  81. S. Jit, and B.B. Pal, “Light Source Integrated OPFET (LSI-OPFET): A New Optoelectronic Integrated Device for Optically Controlled Varying Gain Amplifier,”  Proc. SPIE, Vol.4905, pp.497-507, 2002
  82. S. Jit and B.B.Pal, “Optical Amplification and Switching,” presented in the Indo Japanese Workshop on Micro-System Technology, Nov.23-25, 2000, Delhi University,  India
  83. S. Jit and B.B.Pal, “OPFET-LAOS: A New Optoelectronic Integrated Device for  Light Amplifying Optical Switch”, Proc. SPIE, Vol. 4580, pp.131-140, Nov.2001

C.     Books Published/Edited:

  1. Jacob Millman, Christos C. Halkias, and Satyabrata Jit, Millman’s Electronic Devices and Circuits, 4e,  Tata McGraw-Hill Publishing Company Limited, New Delhi, 2015.
  2. P. Chakrabarti, S. Jit and A. Pandey, “Emerging Trends in Electronic and Photonic Devices & Systems,” Macmillan Publishers India Limited, New Delhi, 2009
  3. P. Chakrabarti and S. Jit, “Advanced Optoelectronic Materials and Devices,” Macmillan Publishers India Limited, 2008.
  4. P. Chakrabarti, S. Jit and R. Kumar, “Recent Advances in Micro-Electro Mechanical Systems,”  Macmillan Publishers India Limited, New Delhi, 2011
  5. S. Jit, “Advances in Microelectronics and Photonics” Nova Science Publisher, New York, USA (2012)

D.     Guest Editor of International Journal
           
Fangyu Yue, Satyabrata Jit, and Weida Hu, The Scientific World Journal (Special Issue on Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications), Vol. 2014 (2014)

  1. Head, Department of Electronics Engineering, IIT(BHU), Varanasi (April 08, 2015 --- May 08, 2018)

  2. Coordinator/Director, Computer Centre, Banaras Hindu University (February 29, 2012 –March 22, 2014)

  3. Chairperson, Senate Post Graduate Committee (SPGC), IIT(BHU), Varanasi (Academic Sessions 2013-14 & 2014-15)

  4. Member, Board of Governors, UPTTI, Kanpur (January 2016 – Till date)

  5. Member, Board of Governors, HBTI Kanpur (March 2013 – February 2016)

  6. Convener, Department Post Graduate Committee (DPGC), IIT(BHU), Varanasi (2013-14 & 2014-15 Sessions)

  7. Member, Research & Development Committee, IIT(BHU), Varanasi (2013- 2018)

  8. Member, Central Purchase Committee, IIT(BHU), Varanasi (January 2013 – 2016)

  9. Member, University Apex Committee for UET/PET Examinations, BHU, Varanasi (2013)

  10. Member, Centralized Instrumentation Facility, BHU, Varanasi (2013)

  11. Member, High Performance Computing Committee, IIT(BHU), Varanasi (2013)

  12. Chairman, Optical Fiber Cable Based LAN Infrastructure Creation Committee, IIT(BHU), Varanasi (2016-2019)

  13. Member, Telecommunication Services Committee, IIT(BHU), Varanasi (2013)

  14. Expert Member, Board of Studies of ECE Dept., SRM University, Lucknow (2013)

  15. Expert Member, Board of Studies of ECE Dept., SVNIT Surat (2008)

  16. Expert Member, Board of Studies of ECE Dept., NIT Delhi (2015)

  17. Expert Member, Board of Studies of Electronics Dept., DDU Gorakhpur University, Gorakhpur (2010)

  18. Member, Teachers’ Grievance Committee, BHU, Varanasi (2012-2013)

  19. Member, Senate, IIT(BHU), Varanasi

  20. Chairman, Co-Curricular Activities Wing, IT-Gymkhana, IIT(BHU), Varanasi (2010-2011 & 2011-2012)

  21. Vice-President & Treasurer, Electronics Engineering Society, Dept. of Electronics Engg., IIT(BHU), Varanasi (since 2007)

  22. Treasurer, IETE Varanasi Sub-Centre (since 2008)

  23. Warden/Administrative Warden, IIT(BHU) Hostels (July 2001-June 2007; 6 years)

  24. Professor-in-Charge, Examinations, Dept. of Electronics Engg.(2008-2010)

  25. Professor-in-Charge, Training & Placement, Dept. of Electronics (2002-2004)

 

1.      Fellowships/Awards/Honors/ Recognitions:

  • BOYSCAST Fellowship (2010-2011), Ministry of Science and Technology, Govt. of India. Worked as the BOSCAST Fellow in the Max-Born-Institute, Division C, Berlin during Sept. 22 to Dec. 25, 2012 under the above mentioned fellowship.
  • Postdoctoral Research Fellowship, Georgia State University, Atlanta, USA, March-August, 2007.
  • INSA-Visiting Fellowship, 2006-2007
  • Man of the Year 2012 awarded by the American Biographical Institute in 2012
  • Sir Isaac Newton Scientific Award of Excellence for 2012 awarded by the American Biographical Institute in 2012
  • Fellow, The Institution of Electronics and Telecommunication Engineers (IETE), India
  • Fellow, The Institution of Engineers (India)
  • Senior Member, IEEE, USA
  • Appointed as one of the Juries for the India Innovation Initiative (i3), a national-level competition in innovation and entrepreneurship organized by the Confederation of Indian Industry in partnership with the AICTE and Department of Science and Technology (DST), Government of India in 2015.
  • Worked as a National Jury in the 8th India Innovation Initiative: National Fair & Awards Ceremony 2016 held during 18-19 October, 2016 at the Lalit Hotel, New Delhi jointly organized by the Confederation of Indian Industry (CII), Department of Science & Technology (DST) and All India Council of Technical Education (AICTE) as a part of India Start-up & India Stand-up program announced by our Hon'ble Prime Minister.

2.    Editorial Board, International Journals: 

Editor-In-Chief: Material Science Research India
Editor-in-Chief: Trends in Opto-Electro & Optical Communications
    Board Member:
    • NIEEE (The Nigerian Institution of Electrical and Electronics Engineers) Technical Transactions
    • Journal of Advance Research in Microelectronics and VLSI
    • Journal of Advance Research in Electrical Engineering and Technology
    • Journal of VLSI Design Tools & Technology
    • Journal of Electronic and Electrical Engineering
    • Journal of Nano Science and Quantum Physics (JNSQP)
    ​3.      Reviewer of International/National Journals:
     
    • IEEE Electron Device Letters
    • IEEE Trans. Electron Devices
    • IEEE Journal of Quantum Electronics
    • IEEE Journal of Selected Topics in Quantum Electronics
    • IEEE Trans. Components and Packaging Technology
    • IEEE Trans. Nanotechnology
    • IEEE Trans. Very Large Scale Integration Systems
    • Journal of Applied Physics
    • Journal of Applied Physics Letters
    • Microsystem Technologies
    • Indian Journal of Physics
    • Journal of Vacuum Science & Technology
    • Solid State Electronics
    • Microelectronics Journal
    • IET Science, Measurement & Technology
    • IET Circuits, Devices and Systems
    • Journal of Electrical Engineering & Technology
    • Superlattices and Microstructures Journal (Elsevier)
    • Materials Science and Engineering B
    • ACS Applied Materials and Interfaces
    • Journal of Electronic Materials
    • Chemistry Letters
    • International Journal of Electronics and Communications
    • IETE Journal of Research
    • IETE Technical Review

    4.      Recognition as Reviewer by the IEEE:
             Included in the Golden List of Reviewers of the IEEE Trans. Electron Devices for the following calendar  years:     
             2004
    (Ref.: Vol.51, pp. 1948-1961, Dec. 2004)
             2005(Ref. Vol.52, pp.2516-2532, Dec. 2005),
             2006(Ref.: Vol.53, pp. 2861-2877, Dec. 2006)
             2008(Ref.: Vol.55, pp. 3324-3345, Dec. 2008)
             2009 (Ref.: Vol.56, pp. 2856-2878, Dec. 2009)
             2012 (Ref.: Vol.59, pp. 3148-3177, Dec. 2012)

    5.     Worked as Ph.D. Thesis Examiner:

     IIT Kanpur; IIT Delhi; IIT Roorkee; IIT Indore;  IIT (ISM) Dhanbad; MNIT Allahabad; NIT Agartala; NIT Raurkela; NIT Silchar; VNIT Nagpur, NIT Jamsedpur, IIITDM Jabalpur, Veermata Jijabai Technological Institute Mumbai; University of Calcutta; Jadavpur University; Delhi University; Anna University; Jawaharlal Nehru Technological University Hyderabad; Guru Govind Singh Indraprastha University, Rajiv Gandhi Pradyugiki University Bhopal; SRM University-Chennai; St. Peter’s University, Tamil Nadu; etc.
     

    6.   Expert Member of the UGC and AICTE Teams:

    • Visited as an UGC expert member to the V.S.S. University of Technology, Burla, Odisha during September 17-18, 2012
    • Visited as an AICTE expert member to Arya College of Engineering and Information Technology, Jaipur, Rajasthan on 18-Oct-2016.
    • Visited as AICTE expert member to the Memary Govt. Polytechnic College, Bardwan, West Bengal on 10.03.2017.
    • Visited as AICTE expert member to the Salbani Institute of Technology, Salbani, West Midnapore, West Bengal on 11.03.2017.
    • Visited as AICTE expert member to the Bharat Institute of Technology Sonipat (BITS), Haryana on 24.10.2017.
    • Visited as AICTE expert member to the MERI College of Engineering & Technology, Jhajjar, Haryana on 25.10.2017

    7.   Visited as an Expert Member of the NBA Team: 

    • National Institute of Technology, Warangal (Oct. 10-12, 2014)
    • BRCM College of Engineering & Technology, Bhiwani, Haryana (April 17-19, 2015)
    • Audisankara College of Engineering & Technology, Nellore, Andhra Pradesh (May 29-31, 2015)
    • Karnatak Law Society’s Gogte Institute of Technology, Udyambag, Karnataka (August 21-23, 2015)
    • Vasireddy Venkatadri Institute of Technology, Nambur (V), Pedakakani (M), Guntur, AP (Oct. 02-04, 2015)
    • Tezpur University, Nappam, Sonitpur, 784 028, Assam (November 6-8, 2015)
    • St. Peter's Engineering College, Maisammaguda, R.R. Dist., Hyderabad-500014, Telengana (January 08-10, 2016)
    • MCKV Institute of Engineering, Liluah, Howrah- 711 204 West Bengal (February 19-21, 2016)
    • B.S. Abdur Rahman University, Chennai, Tamil Nadu (April 15-17, 2016)
    • National Institute of Technology Calicut, Kozhikode, Kerala- 673 601 (August 19-21, 2016)
    • MAEER’s MIT College of Engineering, Pune (September 16-18, 2016)
    • Panimalar Engineering College, Bangalore Trunk Road, Varadharajapuram, Nazarathpet, Poonamallee, Chennai-600123 (October 22-23, 2016)

      8.    Member of Technical Committee of International Conferences (Last 3 Years): 

    • 3rd IEEEE International Conference on Electrical, Electronics, Communication, Computer Technologies and Optimization Techniques (ICEECCOT- 2018)  to be held during December 14-15, 2018 at GSSS Institute of Engineering & Technology for Women, Mysore, India
    • 2018 6th International Conference on Wireless and Optical Communications (ICWOC 2018) to be held during July 6-9, 2018 in Chengdu, China.
    • 5th International Conference on Wireless and Optical Communications (ICWOC 2017) held in Singapore during July 7-9, 2017
    • IEEE Second International Conference on Electrical, Computer and Communication Technologies (IEEE ICECCT 2017), February 22-24, 2017; SVS College of Engineering, JP Nagar, Coimbatore, Tamilnadu, India
    • IEEE International Conference on Recent Advances and Innovations in Engineering (ICRAIE-2016), December 23-25, 2016; Purnima College of Engineering, Purnima University, Jaipur
    • IEEE Conference on Emerging Devices and Smart Systems (ICEDSS 2016), March 4-5, 2016; Mahendra Engineering College (Autonomous), Mallasamudram, Tamilnadu, India.
    • International Conference on Allied Electrical and Communication Systems, December 8-10, 2016, VFSTR University, Vadlamudi, A.P.
    • IEEE First International Conference on Electrical, Computer and Communication Technologies (IEEE ICECCT 2015), March 5-7, 2015; SVS College of Engineering, JP Nagar, Coimbatore, Tamilnadu, India
    • 1st National Conference on Technology Enabling Modernization of Rural India (TMRI-2015); October 30-31, 2015; Suresh Gyan Vihar University, Jaipur, India
    • International Conference on Frontiers in Materials Science and Technology (ICFMST-2015); December 8-10, 2015; National Institute of Science and Technology (NIST), Behrampur, Odisha 

     

    Invited Lectures Delivered: 

    1. “Nanoscale CMOS Technology: Issues and Challenges” delivered on April 27, 2019 at the “DST-SERB & TEQIP-III Sponsored National Workshop on Modeling of Novel Nanoelectronic Devices and Circuits for ULSI Technology held during April 26-30, 2019 at NIT Silchar.
    2. Metal Oxide Nanostructures for Optoelectronic Applications,” delivered on April 04, 2019 in the TEQIP sponsored workshop on Advance Embedded systemand Microelectronics held in the department of Electronics & Communication Engineering, MNNIT Allahabad during April 1-5, 2019.
    3. Metal Oxide Nanostructures: Materials, Devices and Applications,” delivered on February 16, 2019 in the Workshop on Recent Trends in Nanotechnology: Devices and Materials Perspective organized by the Jaypee Institute of Information Technology, Noida during February 15-16, 2019.
    4. “Fabrication and Characterization of Metal Oxide Nanostructures for Sensing Applications” delivered on Dec. 27, 2018 in the AICTE QIP Sponsored Short-Term Course on Material Characterization for Engineers organized by the School of Material Science and Technology, IIT (BHU) during Dec. 24-29, 2018.
    5. “Metal Oxide Nanostructures for Gas and Optical Sensing Applications” delivered on October 25, 2018 in AICTE QIP Sponsored Short-Term Course on Smart Sensors and Systems (SSS - 2018) organized by the Department of Electronics Engg., IIT (BHU) during Oct.22-27, 2018
    6. “Advances in MOSFET Transistors: Issues and Challenges” delivered on July 03, 2018 at the Faculty Development Program on Microsystems & Advanced Semiconductor Devices organized by Department of Electronics & Communication Engineering, S.R.M.S. College of Engineering & Technology  Bareilly during July 03-07, 2018
    7. “Non-Classical CMOS Technology: An Overview” delivered at the Short-Term Course on Modeling and Simulation of Advanced Semiconductor Devices and VLSI Circuits organized by the Department of Electronics and Communication Engineering, G.B. Pant Institute of Engineering & Technology, Uttarakhand during June 25-29, 2018.
    8. Issues and Challenges of CMOS Scaling for Next Generation IC Technology” delivered on June 23, 2018 at Short-Term Course on Fabrication of Microelectronic Devices for VLSI Circuits and MEMS Based Sensors organized by the Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata during June 21-23, 2018.
    9. Terahertz Technology and Its Applications: Exploring Its Possibility for Tbps Wireless Communications,” 4th International Conference on Signal Processing and Communication (ICSC-2018) to be held at JIIT, Noida during March 21-23, 2018. 
    10. “Metal Oxide Nanostructure Materials and Devices for Electronic, Optoelectronic and Gas Sensing Applications,” delivered on November 11, 2017 at the 3rd   International Conference on Nanoelectronics, Circuits & Communication Systems (NCCS-2017) held during November 11-12, 2017 at ARTTC, BSNL, Hazaribag Road, Ranchi.
    11. “Terahertz Technology: An Overview” delivered on November 10, 2017 at  Department of Electronics and Communication Engineering, NIT Jamshedpur.
    12. “Fabrication and Characterization of Colloidal Quantum Dots Based Photodetectors,” delivered on August 11, 2017 at the IEEE international conference on Telecommunication and Networks (TEL-NET 2017) organized by the Amity University, Noida during August 10-11, 2017.
    13. “Electrical and Optical Properties of ZnO Nanostructure Based Schottky and Heterojunction Diodes Fabricated on Si Substrates,” delivered on July 24, 2017 at the Dept. of Electronics Engineering, IIT(ISM) Dhanbad
    14. “ZnO and TiO2 Nanostructure Based Schottky and Heterojunction Diodes for Ultraviolet Detections” delivered on March 08, 2017 at the Department of Department of Instrument Technology, College of Engineering, Andhra University, Visakhapatnam.
    15. “Fabrication and Characterization of p-Si/n-TiO2 Nanostructure Heterojunction Diodes for Ultraviolet Detections” delivered on December 09, 2016 in the International Conference on Allied Electrical and Communication Systems (ICAECS-2017) organized by the Vignan University, Guntur, A.P. during December 8-10, 2016
    16. “Basic Concepts and Modeling of JFET, MESFET and MOSFET” delivered on November 30, 2016 in the UGC-Sponsored Refresher Course on “VLSI Design and Nanotechnology: Issues and Challenges” organized by the Jadavpur University, Kolkata during November 28-December 17, 2016
    17. “Electrical and Optical Properties of Metal Oxide Nanostructures Based Schottky and Heterojunction Diodes” delivered on July 29, 2016 in the workshop "Emerging areas of Electronics and Communication Engineering" organized by the Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata.
    18. Advanced MOS Transistors for Future Generation Integrated Circuits: An Overview” delivered on July 11, 2016 in the Faculty Development Program on Integrated Circuits: Design and Applications organized by the United Institute of Technology, Allahabad during July 11-15, 2016.
    19. Fundamentals of Field Effect Transistors: Basic Concepts and Modeling” delivered on July 11, 2016 in the Faculty Development Program on Integrated Circuits: Design and Applications organized by the United Institute  of Technology, Allahabad during July 11-15, 2016.
    20. Effects of Seed Layers on the ZnO Nanostructure materials grown on Si Substrates for Electronic and Ultraviolet Detection Application” delivered on December 12, 2015 in the International Conference on Frontiers in Materials Science & Technology (ICFMST 2015) held during December 10-12  at National Institute of Science and Technology, Berhampur, Odisha, India
    21. “Advances in CMOS Devices: An Overview” delivered on November 12, 2015 at the Mepco Schlenk Engineering College, Sivakasi, Tamilnadu  - 626 005
    22. “Electrical and Ultraviolet Detection Properties of Some n-ZnO/p-Si  Nanostructure Heterojunctions” delivered on November 03, 2015 at the  Advanced Nanomaterials: Characterizations and Applications (WANCA-2015) held during November 02-08, 2015 at the Department of Physics, Banaras Hindu University, Varanasi, India.
    23.  “Fabrication and Characterization of Some p-Si/n-ZnO Nanostructured Heterojunction Devices for Electronic and Ultraviolet Detection Applications” delivered on October 24, 2015 at the  2nd International Conference on Emerging Technologies: Micro to Nano (ETMN 2015) during 24-25 October, 2015 at Manipal University, Jaipur, India.
    24.  “Terahertz Technology: Principles and Applications” delivered on October 14, 2015 at the Dept. of Electronics and Communication Engineering, Kashi Institute of Technology, Varanasi
    25. “Principles and Applications of Terahertz Technology: An Overview” delivered on September 25, 2015 at the  International Conference on Signal Processing, Computing and Control (2015 ISPCC) during September 24- 26, 2015 at Jaypee University of Information Technology, Waknaghat, Solan, H.P., INDIA
    26. Referencing in Research Articles using EndNote Software” delivered on September 17, 2015 in the “Capacity Building Programme for Faculty Member in Social Sciences” held during September 6-19, 2015 at Faculty of Commerce, BHU
    27. Art of Referencing in Research Articles” delivered on June 23, 2015 in the Workshop on Research Methodology for Ph.D. Students in Social Sciences held during June 15-24, 2015 at Faculty of Management Studies, BHU
    28. “Introduction to Terahertz Technology,” delivered at the Advanced VLSI, Signal processing and Communication network (AVSC-2014) during May 19-24, 2014, Motilal Nehru National Institute of Technology (MNNIT), Allahabad on May 23, 2014
    29. “CMOS Scaling: Issues and Challenges for VLSI/ULSI Applications,” delivered at the Advanced VLSI, Signal processing and Communication network (AVSC-2014) during May 19-24, 2014, Motilal Nehru National Institute of Technology (MNNIT), Allahabad on May 22, 2014
    30. “Terahertz Technology: Principles & Applications” delivered at the Industrial Symposium, Visvesvaraya National Institute of Technology (VNIT), Nagpur on April 05, 2014
    31. “Fundamentals of Information and Coding Theory,” delivered at the Workshop on Communication System Design (WCSD-2014), Sambhunath Institute of Engineering and Technology, Allahabad on April 03, 2014  
    32. Fundamentals of CMOS Scaling: A Journey from Diode to Non-Classical CMOS Technology” delivered at the Dept. of Electronics & Communication Engineering, Jadavpur University, Kolkata  on December 21, 2013
    33. “E-Governance” delivered at the Management Development Program on Financial Management, Faculty of Commerce, BHU on January 16, 2014  
    34. Fundamentals of CMOS Scaling: A Journey from Diode to Non-Classical CMOS Technology” delivered at the Dept. of Electronics & Communication Engineering, Jadavpur University, Kolkata  on December 21, 2013
    35. “Importance of Referencing in Research Reports: Introduction to the EndNote Software” delivered on Sept. 15, 2013 in the ICSSR Sponsored 10 days Research Methodology Programme for Ph.D Students in Social Sciences organized by the Faculty of Commerce during  September 6-15, 2013
    36. Non-Classical CMOS Technology: An Overview” delivered at the  “Student’s Conference on Engineering and Systems (SCES 2013),” April 12-14, 2013, MNNIT, Allahabad
    37. A Journey from BJT to Multi-Gate CMOS Technology” delivered on January 11, 2013 at the Dept. of Electronics & Communication Engineering, NIT Agartala, Tripura
    38. “Advances in MOSFET Technology: An Overview” -delivered at the  “Student’s Conference on Engineering and Systems (SCES 2012),” March 16-18, 2012, MNNIT, Allahabad. 
    39. “Modeling and Simulation of Some Advanced Non-Classical CMOS Devices” delivered at the nanoMASTD-12, July 07, 2012, Institute of Radio Physics & Electronics, Kolkata.  
    40. “CMOS Scaling: Issues, Trends and Key Technology Innovations”-delivered at the International Conference on Power, Control and Embedded Systems (ICPCES-2010), Nov.28-Dec.01, 2010, MNNIT, Allahabad. 
    41. “Terahertz Technology: An Overview”- delivered at the Workshop on Nanotechnology in Semiconductor Industry, April 5-6, 2008, Department of ECE, M.M.M. Engineering College, Gorakhpur.
    42. “Issues and Challenges of Nanoscale MOSFETs”- delivered at the Workshop on Nanotechnology in Semiconductor Industry, April 5-6, 2008, Department of ECE, M.M.M. Engineering College, Gorakhpur.
    43.  “Global Positioning Systems: An Overview” delivered at the Winter School on Information and Communication Technologies Mediated Agricultural Extension: Basics to Advances, December 15,2010 - January 05, 2011, Department of Extension Education, Institute of Agricultural Sciences, BHU, Varanasi.
    44. “Introduction to the Satellite Television Systems” delivered at the Winter School on Information and Communication Technologies Mediated Agricultural Extension: Basics to Advances, December 15,2010 - January 05, 2011, Department of Extension Education, Institute of Agricultural Sciences, BHU, Varanasi.

    A.      Collaborative  Research Group:

    • Prof. Rajiv Prakash, School of Materials Science and Technology, IIT(BHU)
    • Prof. Anup Ghosh, Department of Physics, BHU
    • Dr. Anchal Srivastava,  Department of Physics, BHU
    • Dr. Bhola Nath Pal, School of Materials Science and Technology, IIT(BHU)
    • Dr. Santanu Das, Department of Ceramic Engineering, IIT(BHU)
    • Dr. Bratindranath Mukherjee, Department of Metallurgical Engineering, IIT(BHU)

    B.       Ph.D. Research Scholars:

    Name                      Ph.D. Research Area
    Mr. Chandan Kumar Ph.D. Scholar
    (Institute TA)
    PQT-12 based organic flexible electronic devices for gas sensing and optoelectronic applications
    Mr. Ashwini Kumar Mishra Ph.D. Scholar
    (Visvesvaraya Fellow)
    Metal oxide nanostructures for biosensing applications
    Mr. Amit Kumar Ph.D. Scholar
    (Visvesvaraya Fellow)
    Fabrication and characterization of conducting polymer/colloidal quantum dots based photovoltaic devices
    Mr. Deepak Kumar Jarwal Ph.D. Scholar
    (Visvesvaraya Fellow)
    Fabrication and characterization of low-cost solution processed hybrid solar cells 
    Mr. Prince Kumar Singh Ph.D. Scholar
    (Visvesvaraya Fellow)
    Modeling and simulation of non-conventional MOS transistors
    Mr. Smrity Ratan Ph.D. Scholar
    (On Leave)
    Performance optimization of thin film based  gas sensors and photodetectors
    Mr. Kamalaksha Baral Ph.D. Scholar
    (Institute TA)
    Modeling and TCAD simulation of non-conventional MOS transistors for low power VLSI applications
    Mr. Rishibrind Kumar Upadhyay Ph.D. Scholar
    (Institute TA)
    Topic yet to be decided
    Mr. Manas Ranjan Tripathy Ph.D. Scholar
    (Sponsored)
    Topic yet to be decided
    Mr. Deep Chand Upadhyay  Ph.D. Scholar (JRF) Fabrication and characterization of non-conventional solar cells
    Mr. Abhinav Pratap Singh Ph.D.
    (Institute TA)
    Colloidal quantum dots based photodetectors 
    Mr. Ashish Kr. Singh Ph.D.
    (Institute TA)
    Modeling and simulation of non-conventional nano-scaled MOSFETs