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Dr. Satyabrata Jit

Professor
Department of Electronics Engineering IIT(BHU), Varanasi
Phone No(s): 9453364250
Email: sjit.ece@iitbhu.ac.in
Area of Interest: Modeling and Simulation of Advanced CMOS Devices ,Metal-Oxide Based Thin Film Devices for Electronic, Gas Sensing and Optoelectronic Applications, Colloidal Quantum Dots Based Photodetectors , Solar Cells, Microwave Photonic Devices & circuits ,Signal Processing & Communication Systems
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Academic Qualifications:

Ph.D. (2002) in Semiconductor Devices (IIT-BHU, Varanasi) (formerly IT-BHU)
M.Tech. (1995) in Communication Systems (IIT Kanpur)
B.E. (1993) in Electronics & Tele-Communication Engineering (IIEST, Shibpore, Howrah) (formerly  B.E. College, Shibpore, Howrah)

Brief Profile:

Prof. S. Jit has earned his B.E., M.Tech. and Ph.D. degrees from the IIEST Shibpore (formerly BE College affiliated to the University of Calcutta), West Bengal in 1993; Indian Institute of Technology Kanpur, India in 1995; and Indian Institute of Technology (BHU) (formerly IT-BHU)), Varanasi, India in 2002 respectively. He has worked as Lecturer  at the Department of Electronics and Communication Engineering of the G.B. Pant Institute of Engineering and Technology (formerly G.B.Pant Engineering College), Pauri-Garhwal during June 1995-April 1998. He joined the  Department of Electronics Engineering, IIT(BHU), Varanasi as Lecturer in April 1998 where he has been working as Professor since June 05, 2010 and Professor in HAG scale since June 05, 2016. Prof. Jit has served as the Coordinator/Director, Computer Center, BHU from February 2012 to March 2014 and  Head, Department of Electronics Engineering, IIT(BHU), Varanasi during April 08, 2015-May 08, 2018. He has also served as the Chairperson, Senate Post Graduate Committee (SPGC) of the IIT(BHU) for 2013-14 & 2014-15 academic sessions. He has also served as a Member of the Board of Governors of the HBTI, Kanpur and UPTTI Kanpur for a period of 3 years each. 
Prof. Jit has supervised 31 Ph.D. theses and has published more than 200 research papers in various peer reviewed international journals (including 75 IEEE publications). He has coauthored a text book titled Millman’s Electronic Devices and Circuits, 4/e published by the McGraw-Hill Publishing Company, New Delhi with Jacob Millman and Christos C. Halkias as other two coauthors. He is one of the Editors of three books titled Advanced Optoelectronic Materials and Devices and Emerging Trends in Electronic and Photonic Devices & Systems both published by the Macmillan Publishers India Limited, New Delhi in 2008 and 2009 respectively and Advances in Microelectronics and Photonics from Nova Science Publishers, New York, USA in 2012. Recently, he has published an edited volume titled 2D Nanoscale Heterostructured Materials published by the Elsevier in May, 2020. He has worked as one of the Guest Editors of the Special Issue on Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications (NAGAP) of the Scientific World Journal in 2014. His present research interests include the modeling and simulation of nanoscaled CMOS devices; nanostructured materials and devices for electronic, optoelectronic and gas sensing applications; Flexible Electronic Devices for Gas Sensing and Optoelectronic Applications, Solar Cells etc.
Prof. Jit has been elected as a Fellow of the West Bengal Academy of Science and Technology (WAST) in 2023. He has been conferred the IETE-Prof. SVC Aiya Memorial Award (2023) by the Institution of Electronics and Telecommunication Engineers (IETE) in 2023. He is the recipient of the INSA (Indian National Science Academy) Visiting Fellowship in 2006 and  Postdoctoral Research Fellowship from the Optoelectronic Laboratory, Georgia State University, Atlanta, USA in 2007. He was awarded the BOYSCAST Fellowship of the Department of Science and Technology (DST), Govt. of India for the year 2010-11 to carry out some advance research in the Max-Born-Institute, Berlin, Germany during Sept.-Dec, 2011. Prof. Jit is a Fellow of the IET, UK;  IETE, India;  and Institution of Engineers India. He is a Senior Member of the IEEE, USA. At present, Prof. Jit is working  as the Associate Editor of two  journals namely IET Micro & Nano Letters (an IET Publication with IF: 0.975) and Journal of Electronic Materials (a Springer publication with IF: 2.047). He is also an Editor of the IETE Journal of Research ( a joint publication of IETE & Taylor and Francis with IF: 2.333). 

Teaching Experience:

  1. Working as Professor, Dept. of Electronics Engineering, IT-BHU, since June 2010
  2. Associate Professor, Dept. of Electronics Engineering, IT-BHU,  June 2007-June 2010
  3. Reader,  Dept. of Electronics Engineering, IT-BHU, June 2004-June 2007
  4. Lecturer, Dept. of Electronics Engineering, IT-BHU, April 1998-June 2004
  5. Lecturer, Dept. of Electronics and Comm. Engineering, G.B. Pant Engineering College, Uttaranchal, June 1995-April 1998 

UG Courses Taught:

  • Signals and Systems
  • Digital Signal Processing
  • Analog Communication Systems
  • Television Engineering
  • High-Speed Devices
  • Optoelectronic Devices

PG Courses Taught:

  • Signal Processing
  • Estimation and Detection Theory
  • Optical Communication
  • Solid State Devices

Ph.D. Thesis Supervised:     
 

  1. Mr. Jogendra Singh Rana (2023), " Solution Processed PTB7 Thin Film Devices for Photodetection and Ammonia Sensing Applications" (Submitted) 
  2. Mr. Ashish Kumar Singh (2022), "Performance Investigation of Some Heterojunction TFETs on SELBOX Substrates: Application to Dielectric Modulated Label-Free Biosensors” 
  3. Mr. Deep Chandra Upadhyay (2022), Fabrication and Characterization of Organic - Inorganic Hybrid Broadband Photodetectors 
  4. Mr. Rishibrind Kumar Upadhyay (2021), Fabrication and Characterization of Some Inorganic/Hybrid Perovskite Based Photodetectors 
  5. Amit Kumar (2021), "Fabrication and Characterization of PCDTBT:PC61BM Based Bulk Heterojunction Organic Solar Cell" 
  6. Deepak Kumar Jarwal (2021), Fabrication and TCAD Simulation of TiO2 / ZnO Nanorods Electron Transport Layer Based CH3NH3PbI3 Perovskite Solar Cells
  7. Kamalaksha Baral (2021), Analytical Modeling and Simulation of Some Engineered Cylindrical-Gate JAM MOSFETs
  8. Smrity Ratan (2021), Fabrication and Characterization of Some TiO2 Thin Films and Colloidal ZnO Quantum Dots Based Hydrogen Sensors
  9. Manas Ranjan Tripathy (2020), TCAD Simulation Based Device and Circuit-Level Performance Analysis of    Source-Pocket Engineered GaSb/Si Heterojunction Vertical TFETs
  10. Ashwini Kumar Mishra (2020), Fabrication and Characterization of CuO Nanostructure Based Non-Enzymatic Glucose Sensors
  11. Prince Kumar Singh (2020), Analytical Modeling and Simulation of Some Gate/Source Structure Engineered Cylindrical Gate Tunnel FETs
  12. Chandan Kumar (2018), Fabrication and Characterization of PQT-12 Based Organic Thin Film Devices for Sensing Applications
  13. Abhishek Tripathi (2019), Target Tracking and Connectivity Using Deterministically Deployed Directional Wireless Sensor Networks
  14. Yogesh Kumar(2018), Fabrication and Characterization of Solution Processed Colloidal ZnO Quantum Dots Based Spectrum Selective Ultraviolet Photodetectors
  15. Sanjay Kumar (2018), Analytical Modeling and Simulation of Some Gate Structure Engineered Homo/Heterojunction Double-Gate Tunnel FETs
  16. Gopal Rawat (2018), Fabrication and Characterization of p-Si/nTiO2 Nanostructured Heterojunction Diodes for Electronic and Optoelectronic Applications
  17. Hemant Kumar (2018), Fabrication and Characterization of Colloidal Quantum Dots Based Photodetectors
  18. Ekta Goel (2017), Two Dimensional Analytical Modeling of Channel Engineered Dual-Material Double-Gate MOSFETs
  19. Balraj Singh (2017), Analytical Modeling and Simulation of Double Gate Junctionless Field Effect Transistors (DG-JLFETs)
  20. Kunal Singh (2017), “Modeling and Simulation of Some Ultra Shallow Junction Based Non-Conventional MOSFETs”
  21. Amritanshu Pandey (2015), “Fabrication and Characterization of Some ZnO Thin-Film Based Devices for Ultraviolet Detection Applications”
  22. Mirgender Kumar (2015), “Modeling and Simulation of Subthreshold Characteristics of Strained-Si SOI MOSFETs with Emphasis on Possible Terahertz Application”
  23. Divya Somvanshi (2015), “Some Studies of ZnO Nanostructure Based Schottky and Heterojunction Devices Fabricated on Silicon Substrates”
  24. Aniruddha Bahadur Yadav (2014), “Fabrication and Characterization of ZnO Thin Films and Pd/ZnO Schottky Contacts for Electronic and Gas Sensing Applications”
  25. Purnima Hazra (2014), “Fabrication and Characterization of Some Si/ZnO Based Nanostructured Heterojunction Devices”
  26. Sarvesh Dubey (2012), “Analytical Modeling and Simulation of Short-Channel Double-Gate MOSFETs with a Vertical Gaussian-like Doping Profile”
  27. Deepak Mishra (2012), “Some Studies on the Combined Source Channel Coding for Deep Space Applications”
  28. Pramod Kumar Tiwari (2011): Modeling and Simulation of Subthreshold Characteristics of  Short-Channel Double-Gate (DG) MOSFETs
  29. Shweta Tripathi (2011): Two-Dimensional (2D) Modeling and Simulation of Optically Controlled Short-Channel GaAs MESFETs
  30. Ghusoon M. Ali (2011): Investigations on ZnO Thin-Film Based Devices for Electronic and Optoelectronic Applications
  31. Neti V. L. Narasimha Murty (2007): Analytical Modeling of Optically Controlled GaAs MESFETs With Emphasis on Substrate Related Effects
  32. Prashant Kumar Pandey (2004): Some Studies on Theoretical Modeling and Simulation of Si-SOI-MESFETs.

 
M.Tech. Thesis Supervised: 

  1. Mr. Shivam Singhal (2022), “Design and Investigation of Electrical Performance Characteristics of Ferroelectric Verticle Tunnel Field Effect Transistor with and without Source Pocket”
  2. Mr. Deepak Gaur (2022), “Design and DC, RF/Analog Analysis of Triple Gate GaAs-FinFET: Temperature Sensitivity Analysis”
  3. Mr. Marella Mangapathi Raju (2022), “Design Performance Assessment of GaSbP-InP Heterojunction Gate all Around Nanowire Tunnel FET”
  4. Mr. Suraj Kumar Yadav (2021), “Simulation and Optimization of Source Pocket Engineered Vertical TFETs with Overlap and Underlap Techniques”
  5. Mr. Prashant Keasrwani (2021), “Numerical Simulation and Performance Optimization of Hybrid Perovskite Solar Cells Using Different Combination of Electron and Hole Transport Layers”
  6. Ms. Shaily Kharya (2021), “Study of Some Novel DRAM Design techniques for the Improvement of Retention time”
  7. Mr. Avinash Kumar (2020), “Numerical Simulations on Perovskite Solar Cells with Organic and Inorganic Carrier Transport Layers”
  8. Mr. Bhoopendra Kumar (2020), “Simulation of Cesium lead halide based inorganic perovskite solar cells”
  9. Mr. Gautam Kumar (2020), “Device and Circuit Level Analyses of Stacked Oxide Cylindrical Gate Junctionless Accumulation Mode MOSFET with Ion-Implanted Channel”
  10. Mr. A. Samad (2020), “Device and Circuit Level Assessment of a Source Pocket Engineered Ge/Si Heterojunction TFET With and Without Heterogeneous Gate Dielectric for low Power Applications”
  11. Mr. Dhirendra Kumar (2019), “Fabrication and Characterization of Ion-Sensitive Field-Effect Transistors for pH Sensing Applications”
  12. Mr. Bhoopendra Kumar Kushwaha (2019), “Fabrication and Characterization of ZnO thin film based UV Photodetectors”
  13. Ms. Khushboo Singh (2019), “Three-Dimensional TCAD Simulation of PQT-12 Based Organic Thin Film Transistor”
  14. Ms. Priya Kumari (2018), “Analytical Modeling and Simulation of Stacked Gate HfO2/SiO2 DG TFET with Source Pocket”
  15. Ms. Neha Niranjan (2018), “TCAD Simulation Based Performance Optimization of Heterojunction Double Gate (DG) TFETs”
  16. Ms. Astha Goel (2017), “Impact of Quantum Confinement on Electrical Characteristics of Heterojunction Double Gate Tunnel Field Effect Transistor”
  17. Ms. Ashvini Rahangdale (2017), “A simulation based study for the electrical characteristic of SOI TFETs with Ferroelectric stacked gate oxide structures”
  18. Mr. B. Sandeep Kumar (2017), “Two dimensional analytical model for the Drain current of SOI Tunnel-FETs”
  19. Ms. Puspanjali Soren (2017), “Performance Optimization of Heterojunction Tunnel Field Effect Transistors”
  20. Trailokya Nath Rai (2016), “Performance investigation of dopingless hetero structure TFETs with a stacked SiO2/Ferroelectric oxide gate structure”
  21. Alok Singh Kushwaha (2016), “Effect of Source/Drain elevation and side spacer dielectrics on the drivability performance of DGJL FETs”
  22. Chandan Kumar (2016), “Performance analysis of DMG dopingless TFET with interface trap charges”
  23. Mr. Manish (2016), “Effect of interface charges on the electrical characteristics of double gate TFETs”
  24. Rupanjana Mukherjee (2015), “A Multiresolution Scheme of Invisible Image Watermarking Robust to Image Manipulations”
  25. Prince Kumar (VIT University, 2015), “Design and Simulation of Tunnel Field Effect Transistors (TFETs) for High ON-Current Applications”
  26. Abhinav Pratap Singh (2015), “Surface Potential Based Threshold Voltage Model of High-k Double-Gate (DG) MOSFETs With Gaussian-Like Doping Profile”
  27. Neetu Singh (2015), “Analytical Modeling and Simulation of Subthreshold Characteristics of Single-Gate-Dual-Oxide (SGDO) Silicon-on-Insulator (SOI) MOSFETs”
  28. Piyush Kumar Pushkar (2015), “Analytical Modeling and Simulation of Threshold Voltage of Double-Gate (DG) Tunnel-Field-Effect-Transistors (TFETs)”
  29. Ashutosh Kumar Dikshit (2015), “Photonic Crystal Based Optical Switch”
  30. Shiv Narayan Kumar(2014), “Steganography Based on Contourlet Transform Using MATLAB”
  31. Vivek Kumar (2014), “Design of New Window Functions for FIR Filters using MATLAB”
  32. Shailesh Bangar (2014), “Implementation of Embedded Zerotree Wavelet (EZW) Algorithm”
  33. Varun Goel(2014), “Two Dimensional Analytical Model for Threshold Voltage of Graded Channel Dual Material Gate (GCDMG) SOI MOSFETs”
  34. Sanjay Sharma (2014), “Analytical Modeling and ATLAS Based Simulation of Vertical Trapezoidal Doped Fully Depleted Silicon-on-Insulator MOSFETs”
  35. Pankaj Kumar (2014), “Analytical Modeling and ATLAS Based Simulation of Dual Dielectric Fully Depleted Silicon-on-Insulator MOSFETs”
  36. Prem Kumar (2013)  “Design, Simulation and Fabrication of Digital Micro-Mirror Devices”
  37. Sanjay Kumar (2013), “Analytical Modeling and ATLAS Based Simulation of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian Profile”
  38. Gopal Rawat(2013), “Analytical Modeling and Simulation of Doped Strained-Si on Silicon-on-Insulator (SSOI) MOSFETs”
  39. Ms. Ekta Goel (2013), “Analytical Modeling and ATLAS Based Simulation of High-k Gate-Stacked Double-Gate (DG) MOSFETs”
  40. Pushkar Singh (2013), “Spectrum Sensing in Cognitive Radio Using Energy Detection Technique”
  41. Chandan kumar Bhagat (2013), “Peak to Average Power Reduction in Orthogonal Frequency Division Multiplexing (OFDM) Systems”
  42. Amit Kumar (2011): Implementation of Set Partitioning in Hierarchical Tree (SPIHT) Algorithms (Co-Supervisor: Mr. A. Pandey)
  43. Dheeraj Gupta (2011): Two-Dimensional Analytical Modeling and Simulation of Doping-Dependent Subthreshold Characteristics of Short-Channel Triple Material-Double Gate (TM-DG) MOSFETs (Co-Supervisor: Mr. A. Pandey)
  44. Manjeet Singh (2010): Analytical Modeling and Simulation of Subthreshold Characteristics of Triple Material-Double Gate (TM-DG) MOSFETs
  45. Ajay Singh (2010): Implementation of Canny Edge Detection Algorithm (Co-Supervisor: Mr. A. Pandey)
  46. Sumeet Kumar (2010): Implementation of Residual Excited Linear Predictive Vocodor using MATLAB (Co-Supervisor: Mr. A. Pandey)
  47. Vimal Gupta (2009): Analytical Modeling and Simulation of the Threshold Voltage of FD-SOI MOSFETs with a Vertical Gaussian Doping Profile
  48. Kanakadas Y(2005): Analytical Modeling and Simulation of Optically Controlled DCFL Inverter using GaAs E-MESFETs
  49. Ratnakar Subudhi (2003): Microwave Characterization of a GaAs Based Optically Controlled Metal Semiconductor Field Effect Transistor
  50. Manoj Thapliyal (2001): Design of a Signaling Management Scheme for DAMA Based SATCOM Networks
  51. Jayanta Mandal (2001): A Comparative Study of QPSK, Q2PSK and MSK Systems
  52. Seema Jaiswal (1999): Safety Critical Real Time Systems for Railways Signaling
  53. N. S. Rana (1998): Design and Implementation of 8-Bit Trellis Code Modulators
Total No. of Journal Publications:      219
___________________________________________________________________
Papers published in the Nature Group of Journals:   01 (Scientific Reports)
Papers published in the IEEE Journals:                      87
Paper published in non-IEEE Journals:                     131
___________________________________________________________________
Papers published in Conference Proceedings:              121
Books Published/Edited:                                                    06 
Guest Editor of Int. Journal:                                               02
Book Chapters:                                                                    06
___________________________________________________________

A.  List of Peer Reviewed Journal Publications
 

Nature Publication:

  1. A. K. Mishra, D. K. Jarwal, B. Mukherjee, A. Kumar, S. Ratan, M. R. Tripathy and S. Jit, “Au nanoparticles modified CuO nanowireelectrode based non-enzymatic glucose detection with improved linearity,”  Scientific  Reports (Nature Publication), Vol. 10, pp.11451:1-10, July 2020.     

Papers Published in the IEEE Publications:

  1. S. Chowdhury, A. P. Singh, S. Jit,  P. Venkateswaran,  and D. Somvanshi, "p-WSe2 Nanosheets/ n-WS2 Quantum Dots/p-Si(2D-0D-3D) Mixed-Dimensional Multilayer Heterostructures Based High Performance Broadband Photodetector," IEEE Trans. Nanotechnology (Accepted; doi: 10.1109/TNANO.2024.3385834)
  2. A. Malekpoor, S. A. Hashemi and S. Jit, "Reversible Gates Using Quantum Phase Slip Junctions, Part A: Logical Reversible Design," IEEE Transactions on Applied Superconductivity, vol. 34, no. 4, Art no. 1701410, pp. 1-10, June 2024
  3. A. K. Dwivedi, S. Jit and S. Tripathi, "SnS₂ and ZnO Nanocomposite Prepared by Dispersion Method for Photodetector Application," in IEEE Transactions on Semiconductor Manufacturing, vol. 37, no. 1, pp. 129-136, Feb. 2024, doi: 10.1109/TSM.2023.3347606  
  4. J. S. Rana and S. Jit, “J. S. Rana and S. Jit, "A Low-Cost Solution-Processed PTB7-Based MSM Visible Photodetector," IEEE Trans. Electron Devices, vol. 71, no. 2, pp. 1208-1213, Feb. 2024, doi: 10.1109/TED.2023.3344547
  5. S. Singh and S. Jit, "Thermally Grown MoSe2 Thin Film-Based n-MoSe2/p-Si Broadband Photodetector," IEEE Trans. Electron Devices, vol. 71, pp. 689-694, January 2024, doi: 10.1109/TED.2023.3339590
  6. D. C. Upadhyay and S. Jit, "Tetrapod-Shaped CdSe Nanocrystals-Coated Multilayered Parallelepiped ZnO Structures-Based Dual-Wavelength Photodetector," IEEE Transactions on Electron Devices, Vol. 70, pp. 5745-5750, November 2023, doi: 10.1109/TED.2023.3314585.
  7. A. K. Dikshit, S. R. Pathipati, J. S. Rana and S. Jit, "Two-Dimensional Perovskite Nanoplatelets-Based Photodetectors for UV Light Detection," IEEE Transactions on Electron Devices, Vol. 70, pp. 5851-5855, November 2023, doi: 10.1109/TED.2023.3312228.
  8. A. K. Dwivedi, S. Jit and S. Tripathi, “High Responsivity PEDOT:PSS/SnS2/MoS2 Double- Heterostructure Based Organic-Inorganic Broadband Photodetector,” IEEE Trans. Electron Devices, Vol. 70, no. 9, pp. 4694-4699, Sept. 2023, doi: 10.1109/TED.2023.3298317)
  9. A. P. Singh and S. Jit, "Performance Optimization of ZnO QDs/F8BT Heterojunction-Based UV–Visible Photodetectors Using MoOx Hole Transport Layer," IEEE Transactions on Electron Devices, Vol. 70(8), pp. 4268-4273, August 2023 doi: 10.1109/TED.2023.3285717
  10. A. K. Dwivedi, S. Jit and S. Tripathi, “WSe2/Al2O3/SnS2 SIS Structure based Self Powered UV-Vis Photodetector,” IEEE Photonics Technology Letters, Vol. 35(15), 805 – 808, August 2023  (DoI: 10.1109/LPT.2023.3281257)
  11. J. S. Rana, S. Das and S. Jit, “Highly Responsive Al/PTB7/Si/Al Vertical Structure Based White Light Photodetector using FTM Method,” IEEE Photonics Technology Letters, Vo. 35(14), pp. 765 - 768 July 2023 (DoI: 10.1109/LPT.2023.3277030)
  12. A. Malekpoor, S. A. Hashemi and S. Jit, “Design of the Clockless Logic Gates based on Quantum Phase Slip Junction,” IEEE Trans. Applied Superconductivity, Vol. 33, no. 6, pp. 1-9, Sept. 2023, Art no. 1701409
  13. J. S. Rana, S. Das and S. Jit, "PTB7 Decorated ZnO Nanorod Based Room Temperature Ammonia Gas Sensor," IEEE Sensors Journal, Vol. 22, No. 23, pp. 22398-22403, December, 2022.
  14. A. K. Dwivedi, R. Tripathi, S. Tripathi, S. Jit and S. Tripathi, “SnS2/PEDOT:PSS Heterostructure Based High Performance UV-Visible Photodetectors,” IEEE Electron Device Letters, Vol. 43, No. 11, pp. 1913-1916, November 2022
  15. A. P. Singh and S. Jit, “Solution Processed ITO/ZnO QDs/TIPS-Pentacene/MoOx High-Performance UV-Visible Photodetector,” IEEE Photonics Technology Letters, Vol. 34(19), pp. 1034 - 1037, October 2022
  16. A. Malekpoor, S. A. Hashemi and S. Jit, "A Direct Inverter Gate Logic Circuit based on Quantum Phase Slip Junctions," IEEE Transactions on Applied Superconductivity, 2022, 32 (8), pp. 1-8, November 2022
  17. A. K. Dwivedi, S. Tripathi, R. Tripathi, S. Jit and S. Tripathi, "PEDOT:PSS/Yb-Doped ZnO Heterojunction Based Flexible UV Photodetector," IEEE Photonics Technology Letters, 34 (18), pp.949-952, September 2022
  18. A. K. Singh, M. R. Tripathy, K. Baral, and S. Jit, “GaSb/GaAs Type-II Heterojunction TFET on SELBOX Substrate for Dielectric Modulated Label-Free Biosensing Application,” IEEE Trans. Electron Devices, Vol. 69(9), pp. 5185-5192, September 2022
  19. A. P. Singh, R. K. Upadhyay and S. Jit, "High-Performance Colloidal ZnO Quantum Dots/TIPS-Pentacene Heterojunction-Based Ultraviolet Photodetectors," IEEE Transactions on Electron Devices, Vol. 69(6), pp. 3230-3235, June 2022
  20. D. K. Jarwal, A. K. Mishra, K. Baral, A. Kumar, C. Kumar, G. Rawat, B. Mukherjee, and S. Jit, “Performance Optimization of ZnO Nanorods ETL Based Hybrid Perovskite Solar Cells with Different Seed Layers,” IEEE Transactions on Electron Devices, Vol. 69 (5), pp. 2494-2499, May 2022
  21. A. Srivastava, S. Jit and S. Tripathi, "Er-Doped ZnO, CuO and Pentacene Based Broadband Photodetector with High External Quantum Efficiency," IEEE Electron Device Letters, vol. 42, no. 12, pp. 1802-1805, Dec. 2021
  22. A. Malekpoor, S. A. Hashemi and S. Jit, “Memoryless Logic Circuit Design Based on the Quantum Phase Slip Junctions for Superconducting Digital Applications,” IEEE Trans. Applied Superconductivity, Vol. 31(9), pp.1-9, December 2021
  23. A. K. Mishra, D. K. Jarwal, B. Mukharjee and S. Jit, "CuO Nanoparticles Decorated ZnO Nanorods based Extended-Gate Field-Effect-Transistor (EGFET) for Enzyme-Free Glucose Sensing Application," IEEE Trans. NanoBioscience, Vol. 21, no. 1, pp. 3-9, Jan. 2022
  24. D. C. Upadhyay and S. Jit, "High Responsivity ZnO Nanorods/ PTB7 Polymer Heterojunction Based UV - Visible Photodetector," IEEE Photonics Technology Letters, Vol. 33(21), pp.1197-1200, November 2021
  25. A. Srivastava, S. Jit and S. Tripathi, "Pentacene and Er-doped ZnO Nanocomposite Based UV-Visible-NIR Wideband Photodetector," IEEE Photonics Technology Letters, Vol. 33 (21), pp.1193-1196, November 2021
  26. M. R. Tripathy and S. Jit, “Lateral and Vertical Gate Oxide Stacking Impact on Noise Margins and Delays for the 8T SRAM Designed with Source Pocket Engineered GaSb/Si Heterojunction Vertical TFET: A Reliability Study,” IEEE Transactions on Device and Materials Reliability, Vol. 21 (3), 372-378, September 2021
  27. D. C. Upadhyay, R. K. Upadhyaya, and S. Jit, “PCDTBT:PCBM:CdSe Tetrapod Shaped Nanocrystals Hybrid Nanocomposites based UV-Visible Photodetectors,” IEEE Photonics Technology Letters, Vol. 33(14), pp. 691-694, July 2021
  28. A. Srivastava, S. Jit and S. Tripathi, "High-Performance Pentacene/ZnO UV-Visible Photodetector Using Solution Method," IEEE Transactions on Electron Devices, Vol. 68(7), pp. 3439-3445, July 2021
  29. A. Srivastava, R. Singh, S. Jit, and S. Tripathi, “Pentacene and CuO Nanocomposite Based Self-Powered Broadband Photodetector,” IEEE Electron Device Letters, Vol.42 (6), pp. 875-878, June 2021 
  30. U. Kasiviswanathan, C. Kumar, S. Poddar, S. Jit, N. Sharma, and S. K. Mahto, “Extended Large Area Si/ZnO Heterojunction Biosensor for Assessing Functional Behaviour of Primary Cortical Neuronal Cells,” IEEE Sensors Journal, Vol.21(13), pp. 14619-14626, July 2021.
  31. U. Kasiviswanathan, C. K. Balavigneswaran, C. Kumar, S. Poddar, S. Jit, N. Sharma and S. K. Mahto, “Aluminium Oxide Thin Film based in vitro Cell-Substrate Sensing Device for Monitoring Proliferation of Myoblast Cells,” IEEE Transactions on NanoBioscience, Vol. 20(3), pp. 331-337, July 2021
  32. U. Kasiviswanathan, C. Kumar, S. Poddar, S. Jit, N. Sharma and S. K. Mahto, “Functional Behaviour of the Primary Cortical Neuronal Cells on the Large Surface of TiO2 and SnO2 based Biosensing Device,” IEEE Transactions on Nanobioscience, Vol. 20(2), pp. 138-145, April 2021.
  33. R. Singh, S. Jit, and S. Tripathi, “Molybdenum Disulphide (MoS2), Reduced Graphene Oxide (rGO) and Copper Oxide (CuO) Nanocomposite-Based High Performance UV-Visible Dual Band Photodetector,” IEEE Photonics Technology Letters, Vol. 33(2), pp. 93-96, January 2021.
  34. A. Srivastava, R. Singh, S. Jit, and S. Tripathi, “Fabrication of MoS2/ZnO Hybrid Nanostructures for Enhancing Photodetection,” IEEE Photonics Technology Letters, Vol.32(24), pp. 1527-1530, December 2020.
  35. D. C. Upadhyay; R. K. Upadhyay; A. P. Singh; S. Jit, “High-Performance Inverted Structure Broadband Photodetector Based on ZnO Nanorods/PCDTBT:PCBM:PbS QDs,” IEEE Trans. Electron Devices, Vol. 67 (11), pp. 4970 – 4976, November 2020
  36. C. Kumar and S. Jit, “Blended PQT-12 and PC61BM Thin Films Based Self-Powered and Fast Response Photodetector,” IEEE Electron Device Letters, Vol. 41 (10), pp.1556-1559, October 2020
  37. A. Srivastava, S. Jit and S. Tripathi, “High-Performance Solution-Processed Pentacene/Al Schottky Ultraviolet Photodiode With Pseudo Photovoltaic Effect,” IEEE Trans. Electron Devices, Vol.67(10), pp. 4300-4307, October 2020.
  38. R. K. Upadhyay, A. P. Singh, D. Upadhyay, D. K. Jarwal, C. Kumar, and S. Jit, “Solid-State Synthesized BiFeO3 Perovskite-Based Fast-Response White-Light Photodetector,” IEEE Electron Device Letters, Vol. 41(8), pp.1225-1228, 2020                         
  39. R. Singh, A. Srivastava, S. Jit, and S. Tripathi, “Modulation of Room-Temperature Ferromagnetism in Copper Oxide Thin Films by Magnetic Field Assisted Annealing,” IEEE Trans. Magnetics, Vol. 56 (7), pp. 1-8, 2020.                 (IF: 1.626)
  40. R. Singh, A. Srivastava, S. Jit, and S. Tripathi, “High Responsivity Visible Blind Pd/Al2O3/MoS2/ITO MISM UV Photodetector,” IEEE Photonics Technology Letters, Vol.32(12), pp. 733-736, 2020.                             
  41. A. Kumar, D. K. Jarwal, A. K. Mishra, S. Ratan, C. Kumar, R. K. Upadhyay, B. Mukherjee, and S. Jit, “Effects of HTL and ETL Thicknesses on the Performance of PQT-12/PCDTBT:PC61BM/ZnO QDs Solar Cells,” IEEE Photonics Technology Letters, Vol. 32(12), pp. 677-680, 2020
  42. U. Kasiviswanathan, C. Kumar, S. Poddar, S. Jit, S. K. Mahto, N. Sharma, “Fabrication of MSM Based Biosensing Device for Assessing Dynamic Behavior of Adherent Mammalian Cells,” IEEE Sensor Journal, Vol. 20(17), pp. 9652-9659, Sept. 2020
  43. A. K. Mishra, D. K. Jarwal, B. N. Mukharjee, A. Kumar,S. Ratan and S. Jit, “CuO nanowire based extended-gate field-effect-transistor (FET) for pH sensing and enzyme-free/receptor-free glucose sensing applications,” IEEE Sensor Journal, Vol.20(9), pp. 5039 – 5047, May 2020.    
  44. C. Kumar, B. K. Kushwaha, A. Kumar, D. K. Jarwal, R. K. Upadhyay, A. P. Singh and S. Jit, “Fibrous Al-Doped ZnO Thin Film Ultraviolet Photodetectors with Improved Responsivity and Speed,” IEEE Photonics Technology Letters, Vol. 32(6), pp. 337-340, March 2020.
  45. M. R. Tripathy, A. K. Singh, A. Samad, S. Chander, K. Baral, P. K. Singh, and S. Jit, “Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Application,” IEEE Trans. Electron Devices, Vol. 67(3), pp. 1285 – 1292, March 2020.          
  46. S. A. Hashemi, K. Beigi, and S. Jit, “Double-Gate Field Effect Diode: A Novel Device for Improving Digital and Analog Performance,” IEEE Trans. Electron Devices, Vol.67(1), pp.18-25, January 2020.              
  47. S. Das, C. Kumar, R. Kumar, A. Srivastava, and S. Jit, “Two-Dimensional MoS2 Based Photosensitive MOS Capacitor," IEEE Photonics Technology Letters, Vol. 32(1), pp. 67-70, January 2020.            
  48. R. K. Upadhyay, A. P. Singh, D. Upadhyay, A. Kumar, C. Kumar, and S. Jit, “BiFeO3/CH3NH3PbI3 Perovskite Heterojunction Based Near-Infrared Photodetector,” IEEE Electron Device Letters, Vol.40(12), 1961-1964, December 2019.
  49. D. K. Jarwal, A. Kumar, A. K. Mishra, S. Ratan, C. Kumar, D. Upadhyay, B. Mukherjee and S. Jit, “Efficiency Improvement of TiO2 Nanorods Electron Transport Layer Based Perovskite Solar Cells by Solvothermal Etching in Ambient Condition,” IEEE J. Photovoltaics, Vol.9(6), pp.1699-1707, November 2019.       
  50. S. A. Hashemi, K. Beigi, and S. Jit, “Modeling of Fringing Capacitances of Ion-Implanted Double Gate Junctionless FETs Using Conformal Mapping," IEEE Trans. Electron Devices, Vol. 66(10), pp.4126-4133, October 2019.     
  51. R. K. Upadhyay, A. P. Singh, D. Upadhyay, S. Ratan, C. Kumar, and S. Jit, “High-Performance Photodetector Based on Organic-Inorganic Perovskite CH3NH3PbI3/ZnO Heterostructure,” IEEE Photonic Technology Letters, Vol. 31(14), pp. 1151-1154, July 2019.                 
  52. D. Gola, B. Singh, J. Singh, S. Jit and P K Tiwari, "Static and Quasi-Static Drain Current Modeling of Tri-Gate Junctionless Transistor with Substrate Bias Induced Effects," IEEE Trans. Electron Devices, Vol. 66 (7), pp. 2876-2883, July 2019.
  53. Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, and S. Jit, “Effects of Optical Resonance on the Performance of Metal (Pd, Au)/CdSe Quantum Dots (QDs)/ ZnO QDs Optical Cavity Based Spectrum Selective Photodiodes,” IEEE Trans. Nanotechnology, Vol. 18, pp. 365-373, April 2019.                    
  54. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “Electrical and Optical Characteristics of PQT-12 Based Organic TFTs Fabricated by Floating-Film Transfer Method,”  IEEE Trans. Nanotechnology, Vol. 17 (6), pp.1111-1117, November 2018.       
  55. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “"Electrical and Ammonia Gas Sensing Properties of PQT-12/CdSe Quantum Dots Composite Based Organic Thin Film Transistors," IEEE Sensors Journal, Vol. 18, pp. 6085-6091, August 2018.      
  56. Y. Kumar, H. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Paland S. Jit, “Spectrum Selectivity and Responsivity of  ZnO Nanoparticles Coated  Ag/ZnO QDs/Ag UV photodetectors,” IEEE Photonics Technology Letters, Vol 30, pp.1147-1150, June 2018.             
  57. C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “Poly (3, 3’’’-dialkylquaterthiophene) Based Flexible Nitrogen Dioxide Gas Sensor,” IEEE Sensors Letters, Vol 2(1), pp. 2475-1472, March 2018.
  58. A. Tripathi, H. P. Gupta, T. Dutta, R. Mishra, K.K. Shukla and S. Jit, “Coverage and Connectivity in WSNs: A Survey, Research Issues and Challenges,” IEEE Access, Vol. 6, pp. 26971 – 26992, June 2018.    
  59. A. Tripathi, H. P. Gupta, T. Dutta, D. Kumar, S. Jit, and K. K. Shukla, “A Target Tracking System Using Directional Nodes in Wireless Sensor Networks,” IEEE Systems Journal, Vol. 13, 1618-1627, June 2019.        
  60. S. Ratan, C. Kumar, A. Kumar, D. K. Jarwal, A. K. Mishra, and S. Jit, “Fabrication and Characterization of Titanium Dioxide Based Pd/TiO2/Si MOS Sensor for Hydrogen Gas,” IEEE Sensors Journal, Vol. 18, pp. 3952-3959, May 2018.                   
  61. Sanjay Kumar, Kunal Singh, Sweta Chander, Ekta Goel, Prince Kumar Singh, Kamalaksha Baral, Balraj Singh, and S. Jit, “2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs with a SiO2/HfO2 Stacked Gate-Oxide Structure,” IEEE Trans. Electron Devices, Vol.: 65, pp. 331-338, January 2018.      
  62. Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, and S. Jit, “Heating Effects of Colloidal ZnO Quantum Dots (QDs) on ZnO QDs/CdSe QDs/MoOx Photodetectors,” IEEE Trans. Nanotechnology, Vol. 16, pp. 1073-1080, 2017.             
  63. H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Paland S. Jit, “Colloidal CdSe Quantum Dots and PQT-12 Based Low-Temperature Self-Powered Hybrid Photodetector,” IEEE Photonics Technology Letters, Vol. 29, No. 20, pp. 1715 - 1718, 2017.                        
  64. Y. Kumar, H. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Paland S. Jit, “Visible-blind Au/ZnO Quantum Dots based Highly Sensitive and Spectrum Selective Schottky Photodiode,” IEEE Trans. Electron Devices, Vol. 64, No. 7, pp. 2874 - 2880, July 2017.
  65. H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Paland S. Jit, “Electrical and Optical Characteristics of Self-Powered Colloidal CdSe Quantum Dot (QD) Based Photodiode,” IEEE J. Quantum Electronics, Vol. 53(3), pp. 4400108:1-8, June 2017.           
  66. G. Rawat, H. Kumar, Y. Kumar, C. Kumar, and S. Jit, “Effective Richardson Constant of Sol-Gel Derived TiO2 Films in n-TiO2/p-Si Heterojunctions," IEEE Electron Device Letters, Vol. 38, No. 5, pp. 633 - 636, May 2017.                  
  67. S. Kumar,  E. Goel,  K. Singh, B. Singh, P. K. Singh, K. Baral  and  S. Jit, “2D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs with a SiO2/HfO2 Stacked Gate-Oxide Structure,” IEEE Trans. Electron Devices, Vol 64, No. 3, pp. 960-968,  March 2017.      
  68. B. Singh, D. Gola, K. Singh, E. Goel, S. Kumar and S. Jit, “Two-Dimensional Analytical Threshold Voltage Model for Dielectric Pocket Double-Gate Junctionless FETs by Considering Source/Drain Depletion Effect,” IEEE Trans. Electron Devices, Vol 64, No. 3, pp. 901 - 908, 2017.       
  69. Y. Kumar, H. Kumar, G. Rawat, C. Kumar, A. Sharma, B. N. Pal and S. Jit, "Colloidal ZnO Quantum Dots Based Spectrum Selective Ultraviolet Photodetectors" IEEE Photonics Technol. Letters, Vol. 29, No. 4, pp. 361 - 364, 2017.    
  70. G. Rawat, D. Somvanshi, Y. Kumar, H. Kumar, C. Kumar and S. Jit, “Electrical and Ultraviolet-A Detection Properties of E-Beam Evaporated n-TiO2 Capped p-Si Nanowires Heterojunction Photodiodes”,  IEEE Trans. Nanotechnology, Vol. 16, No. , pp. 49 - 57, Jan. 2017.         
  71. S. Kumar, E. Goel, K. Singh, B. Singh, M. Kumar and S. Jit, “A Compact 2D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors with a SiO2/High-k Stacked Gate-Oxide Structure”, IEEE Transactions on Electron Devices, Vol 63, No. 8, pp. 3291-3299, 2016.       
  72. M. Kumar, S. Kumar, E. Goel, K. Singh, B. Singh, and S. Jit, “Strain-Induced Plasma Radiation at Terahertz Domain in Strained-Si-on-Insulator MOSFETs”, IEEE Trans. on Plasma Science, Vol. 44, No. 3, pp. 245-249, 2016. 
  73. G. Rawat, D. Somvanshi, H. Kumar, Y. Kumar, C. Kumar and S. Jit, “Ultraviolet Detection Properties of p-Si/n-TiO2 Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol-Gel Methods: A Comparative Study," IEEE Trans. Nanotechnology, Vol. 15, No. 2, pp. 193-200, 2016.    
  74. E. Goel, S. Kumar, K. Singh, B. Singh, M. Kumar, and S. Jit, “2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs”, IEEE Transactions on Electron Devices, Vol 63(3), pp. 966-973, 2016.  
  75. B. Singh, D. Gola, K. Singh, E. Goel, S. Kumar and S. Jit, “Analytical Modeling of Channel Potential and Threshold Voltage of Double Gate Junctionless Field Effect Transistors with a Vertical Gaussian-Like Doping Profile”, IEEE Transactions on Electron Devices, Vol 63, No. 6, pp. 2299-2305, 2016.    
  76. M. Kumar, and S. Jit, “A Novel Four-Terminal (4T) Ferroelectric Tunnel FET (Fe-TFET) for Quasi-Ideal Switch,” IEEE Trans. Nanotechnology (under Letters category), Vol. 14, No. 4, pp.600-602, 2015.   
  77. M. Kumar, and S. Jit, ”Effects of Electrostatically Doped Source/Drain and Ferroelectric Gate Oxide on Subthreshold Swing and Impact Ionization Rate of Strained-Si-on-Insulator Tunnel Field Effect Transistors,” IEEE Trans. Nanotechnology (under Letters category), Vol. 14, No. 4, pp. 597-599, 2015.  
  78. A. B. Yadav, A. Pandey, D. Somvanshi and S. Jit, “Sol-Gel Based High Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodetectors,” IEEE Trans. Electron Devices, Vol. 62, No. 6, pp. 1879-1884, 2015.      
  79. D. Somvanshi and S. Jit, “Effect of ZnO Seed Layer on the Electrical Characteristics of Pd/ZnO Thin Film based Schottky Contacts Grown on n-Si Substrates,” IEEE Trans. Nanotechnology, Vol.13(6),pp.1138-1144, 2014.   
  80. D. Somvanshi and S. Jit, “Analysis of Temperature Dependent Electrical Characteristics of n-ZnO Nanowires (NWs)/p-Si Heterojunction Diodes," IEEE Trans. Nanotechnology, Vol.13, pp.62-69, 2014.   
  81. D. Somvanshi and S. Jit, "Effects of Sn and Zn Seed Layers on the Electrical Characteristics of Pd/ZnO Thin Film Schottky Diodes Grown on n-Si Substrates," IEEE Electron Device Letters, Vol.35(9), pp.945-947, 2014.  
  82. D. Somvanshi and S. Jit, "Pd/ZnO Nanoparticles Based Schottky Ultraviolet Photodiodes Grown on Sn Coated n-Si Substrates by Thermal Evaporation Method," IEEE J. Selected Topics in Quantum Electronics, Vol. 20 (6), pp. 3803106:1-6, 2014.   
  83. A. B. Yadav, A. Pandey and S. Jit, “Pd Schottky Contacts on Sol-Gel Derived ZnO Thin Films with Nearly Ideal Richardson Constant,” IEEE Electron Device Letters, Vol. 35, pp. 729-730, July 2014.          
  84. D. Somvanshi and S. Jit, “Mean Barrier Height and Richardson Constant for Pd/ZnO Thin Film Based Schottky Diodes Grown on n-Si Substrates by Thermal Evaporation Method,” IEEE Electron Device Letters, Vol.34(10), pp.1238-1240, 2013.
  85. S. Jit, A. B. Weerasekara, R. C. Jayasinghe, Steven G. Matsik, A. G. Unil Perera, M. Buchanan, G. Irwin Sproule, H. C. Liu, A. Stintz, S. Krishna, S. P. Khanna, M. Lachab, and E. H. Linfield, “Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors,” IEEE Electron Device Letters, vol. 29, pp. 1090-1093, Oct. 2008.
  86. P. Pandey, B. B. Pal, and S. Jit “A New Two-Dimensional Analytical Model for Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel  Si-SOI-MESFET’s,”   IEEE Trans. Electron Devices, vol. 51, pp. 246-254, February 2004.
  87. S. Jit and B. B. Pal, “A New Optoelectronic Integrated Device for Light Amplifying Optical Switch,” IEEE Trans. Electron Devices, vol. 48, pp.2732-2739, Dec.2001.

Papers Published in the IET (Formerly IEE) Publications:

  1. S. Ratan, C. Kumar, A. Kumar, D. K. Jarwal, A. K. Mishra, R. K. Upadhyay, A. P. Singh and S. Jit, “Room Temperature High Hydrogen Gas Response in Pd/TiO2/Si/Al Capacitive Sensor,” IET Micro & Nano Letters, Vol. 15 (9), pp. 632 – 635, August 2020.
  2. Hemant Kumar, Yogesh Kumar, Kunal Singh, Sanjay Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, S. Jit, “Kink Effect in TiO2 Embedded ZnO Quantum Dot based Thin Film Transistors”, IET Electronics Letters, vol. 53 no. 4, pp. 262 – 264, 2017. 
  3. Shweta Tripathi and S. Jit, “Analytical Modeling of the Current (I)-Voltage (V) Characteristics of Sub-Micron Gate-Length Ion-Implanted GaAs MESFETs under Dark and Illuminated Conditions,” IET Circuits, Devices & Systems, Vol.7, pp.42-50, 2012.
  4. Pramod Kumar Tiwari, Chinmaya Ranjan Panda, Anupam Agarwal, Prateek Sharma and S. Jit, “Modelling of Doping Dependent Subthreshold Swing of  Symmetric Double-Gate (DG) MOSFETs,” IET Circuits, Devices and Systems, vol.4, pp.337-345, 2010.
  5. S. Jit, and B. B. Pal, “New Optoelectronic Integrated Device for Optically Controlled   Microwave Oscillators,” IEE Proc.-Optoelectron. (This journal has been continuing as IET Optolectronics since 2007), Vol.151, pp. 177-182, June 2004.    

 Some High-Quality Other Publications with Impact Factor Greater than 03:

  1. D. Somvanshi and S. Jit, “Advances in 2D Materials based Mixed-dimensional Heterostructures Photodetectors: Present Status and Challenges,” Materials Science in Semiconductor Processing, Vol. 164, pp.107598:1-17, May 2023 (IF: 4.664).  
  2. H. Bist, A. P. Singh, S. Jit and H. Mishra, “Effect of concentration on the photophysics of solution of [6,6]-phenyl C61 butyric acid methyl ester (PCBM)in chloroform,” Journal of Luminescence, Vol. 258, pp.119808:1-7, March 2023 (I.F.: 4.171]
  3. V. Kumar, R. K. Upadhyay, D. Bano, S. Chandra, P. K. Yadav, D. Kumar, S. Jit, and S. H. Hasan, “Self-assembly of Cu TMA based Semiconducting fibrous Metallogels for fabrication of active electronic device with high Rectification Ratio,” Materials Science & Engineering B, Vol. 291, pp.116359:1-6, May 2023 (I.F.: 3.407)
  4. U. Sharma, J. Singh Rana, C. Kumar, M. S. Pradeepkumar, Md Imteyaz Ahmad, S. Jit, S. Das, “Visible light detection property of seamless two -dimensional MoS2 –based metal-semiconductor-metal photodiodes fabricated on silicon substrates,” Materials Science in Semiconductor Processing, Vol. 151, pp. 106987:1-7, November 2022  (IF: 4.644)
  5. R.K. Upadhyay and S. Jit, “Solution-processed ZnO nanoparticles (NPs)/CH3NH3PbI3/PTB7/MoO3/Ag inverted structure based UV–visible-Near Infrared (NIR) broadband photodetector,” Optical Materials, Vol. 135, pp.113290:1-6, January 2023 (IF:3.754). 
  6. H. Bisht, A. P. Singh, H. C. Joshi. S. Jit, and H. Mishra, “Förster Resonance Energy Transfer between Fluorescent Organic Semiconductors: Poly(9,9-dioctylfluorene-alt-benzothiadiazole) and 6,13- Bis(triisopropylsilylethynyl) pentacene,” J. Physical Chemistry B (ACS), Vol. 126 (21), pp. 3931- 3939, May 2022 (IF: 3.466)
  7. A. Singh, S. Maurya, P. Kumar, D. K. Jarwal,  S. Jit,  S. Bysakh,  Md. I. Ahmad, R. K. Mandal and J. Basu, “Homogeneous and polymorphic transformations to ordered intermetallics in nanostructured Au-Cu multilayer thin films,” Journal of Materials Science, Vol. 56, pp.16113–16133, October 2021. (IF: 4.220)
  8. K. Baral, P. K. Singh, G. Kumar, A. K. Singh, M. R. Tripathy, S. Kumar and S. Jit, “Impact of Ion Implantation on Stacked Oxide Cylindrical Gate Junctionless Accumulation Mode MOSFET: An Electrical and Circuit Level Analysis,” Materials Science in Semiconductor Processing, Vol. 133, pp. 105966:1-8, October 2021 (IF:4.644)
  9. H. Bisht, A. P. Singh, S. Jit, S. Pokharia, and H. Mishra, “Effect of Diffusion on Photo-Induced Excited-State Energy Transfer between Fluorescent Semiconducting Molecules: Tris-(8- hydroxyquinoline) Aluminum and 6,13-Bis (Triisopropylsilylethynyl) Pentacene,”  The Journal of Physical Chemistry C (ACS),  Vol. 125(42), pp. 23011–23020, October 2021  (I.F.: 4.126) 
  10. Dhirendra Kumar, S. Jit, S. Sinha, R. Sharma, R. Mukhiya, “Titanium Nitride Sensing Film-based Extended-Gate Field-Effect Transistor for Chemical/Biochemical Sensing Applications,” Journal of The Electrochemical Society, Vol. 168, Article No. 107510, November 2021 (I.F.: 4.316)
  11. P. K. Yadav, R. K. Upadhyay, D. Kumar, S. Chandra, D. Bano, S. Jit and S. H. Hasan, “Synthesis of green fluorescent carbon quantum dots via latex of ficus benghalensis for the detection of tyrosine and fabrication of Schottky barrier diode,” New Journal of Chemistry, Vol. 45, pp. 12549-12556, June 2021 (DOI: 10.1039/D1NJ01655E) (IF: 3.925)
  12. V. Kumar, R. K. Upadhyay, D. Bano, S. Chandra, D. Kumar, S. Jit and S. H. Hasan, “The fabrication and characterization of a supramolecular Cu-based metallogel thin-film based Schottky diode,” New J. Chemistry, Vol. 45, pp. 6273-6280, March 2021. (IF: 3.925)
  13. H. Bisht, G. Rawat, S. Jit and H. Mishra, “Excitation Energy Transfer/Migration between Tris-(8-hydroxyquinoline) Aluminium and Poly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] in Chloroform,” J. Phys. Chem. C (ACS), Vol.124 (12), pp.6486-6494, March 2020 (IF: 4.189)
  14. A. Sharma, N. Chaurasia, S. Anumol, Y. Kumar, S. Jit, A. Pandey and B N Pal, “Solution Processed Li5AlO4 dielectric for low voltage transistor fabrication and its application for metal oxide/quantum dot heterojunction phototransistor,” Journal of Materials Chemistry C (RSC), Vol 6, pp 790-798, 2018         (IF: 7.059)
  15. Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakashb and S. Jit, “Flexible poly (3, 3'''- dialkylquaterthiophene) based interdigitated metal-semiconductor-metal ammonia gas sensor,” Sensors and Actuators: B. Chemical, Vol. 255, Part 1, pp. 203-209, 2018 (IF: 7.100)
  16. S. Gopal, P. Maity, Y. kumar, H. Kumar, V. Gangwar, S. Chatterjee, S. Jit, A. K. Ghosh, and B. N. Pal, “Single Quantum Dot Rectifying Diode With Tunable Threshold Voltage,” Journal of Materials Chemistry C., Vol. 5, pp. 9792-9798, 2017.    (IF: 7.059)
  17. Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakashb and S. Jit, “Electrical and ammonia gas sensing properties of poly (3, 3‴- dialkylquaterthiophene) based organic thin film transistors fabricated by floating-film transfer method,” Organic Electronics, Vol. 48, pp. 53 – 60, 2017 (IF: 3.310)
  18. A. B. Yadav and S. Jit, “Particle Size effects on the Hydrogen Sensing Properties of Pd/ZnO Schottky Contacts Fabricated by Sol-gel Method,” Int. J. Hydrogen Energy, Vol. 42, pp.786-794, 2017 (IF: 4.939)
  19. S. K. Yadav, G. Rawat, S. Pokharia, S. Jit, and H. Mishra, “Excited-State Dynamics of Quinine Sulphate and Its Di-Cation Doped in Polyvinyl Alcohol Thin Films Near Silver Nanostructure Islands,” ACS Omega, Vol. 4(3), pp.5509-5516, March 2019 (IF: 3.512)
  20. Smrity Ratan, Chandan Kumar, Amit Kumar, Deepak Kumar Jarwal, Ashwini Kumar Mishra, Rishibrind Kumar Upadhyay and S. Jit, “Fabrication and characterization of a ZnO quantum dots-based metal–semiconductor– metal sensor for hydrogen gas,” Nanotechnology, Vol.30, p.395501 (7pp), 2019 (IF: 3.551)
  21. Ashwini Kumar Mishra, Bratindranath Mukherjee, Amit Kumar, Deepak Kumar Jarwal, Smrity Ratan, Chandan Kumar, and Satyabrata Jit, “Superficial fabrication of gold nanoparticles modified CuO nanowires electrode for non-enzymatic glucose detection,” RSC Advances, Vol. 9, pp.1772 – 1781, 2019 (IF: 3.119)
  22. Amit Kumar; Deepak Jarwal; Ashwani Mishra; Smrity Ratan; Chandan Kumar; Deep Upadhyay, Bratindranath Mukherjee; S. Jit, “Synergistic Effect of CdSe Quantum Dots (QDs) and PC61BM on Ambient-Air Processed ZnO QDs/PCDTBT:PC61BM:CdSe QDs/MoO3 Based Ternary Organic Solar Cells,” Nanotechnology, Vol. 31, pp.465404:1-8, August 2020. (IF: 3.551)

Papers in Non-IEEE and Non-IEE/IEE International Journals with IF Below 3.0:

  1.   B. B. Kumar, S. Dubey, S. Jit, K. Singh, “Cd0.2Zn0.8O nanowire thin film transistor for low kickback high-speed AMLCD circuit applications,” Micro and Nanostructures, Vol. 189, Article No. 207796, May 2024 
  2. P.S.T.N. Srinivas, S. Jit and P. K. Tiwari, “Impact of self-heating on thermal noise in In1−xGaxAs GAA MOSFETs,” Microelectronics Journal, Volume 131, January 2023, 105661
  3. K. Baral, P. K. Singh, S. Kumar, A. K. Singh, D. K. Jarwal and S. Jit, “A Unified 2-D Model for Nanowire Junctionless Accumulation and Inversion Mode MOSFET in Quasi-ballistic Regime,” Solid State Electronics, Vol. 193, pp.108282:1-12, July 2022
  4. M. R. Tripathy, A Samad, A. K. Singh, P. K. Singh, K. Baral, A. K. Mishra, and S. Jit, “Impact of Interface Trap Charges on Electrical Performance Characteristics of a Source Pocket Engineered Ge/Si Heterojunction Vertical TFET with HfO2/Al2O3 Laterally Stacked Gate Oxide,” Microelectronics Reliability, Vol. 119, pp. 114073:1-11, April 2021.
  5. A. K. Singh, M. R. Tripathy, P. K. Singh, K. Baral, S. Chander, S. Jit, “Deep Insight into DC/RF and Linearity Parameters of a Novel Back Gated Ferroelectric TFET on SELBOX Substrate for Ultra Low Power Applications,” Silicon, Vol.13, pp.3853–3863, November 2021 
  6. P. K. Singh, K. Baral, S. Kumar, M. R. Tripathy, A. K. Singh, R. K. Upadhyay, S. Chander, S. Jit, “Analytical Drain Current Model for Source Pocket Engineered Stacked Oxide SiO2/HfO2 Cylindrical Gate TFETs,” Silicon 13(6), pp.1731-1739, June 2021.
  7. M. R. Tripathy, A. K. Singh, A Samad, P. K. Singh, K. Baral and S. Jit, “Impact of heterogeneous gate dielectric on DC, RF and circuit-level performance of source- pocket engineered Ge/Si heterojunction vertical TFET,” Semiconductor Science and Technology, Vol. 35, pp.105014:1-9, September 2020
  8. A. K. Singh, M. R. Tripathy, K. Baral,P. K. Singh, and S. Jit, “Impact of interface trap charges on device level performances of a lateral/vertical gate stacked Ge/Si TFET‑on‑SELBOX‑substrate,” Applied Physics A, Vol. 126, pp.681:1-11, August 2020.
  9. S. Kumar, K. Singh, K. Baral, P. K. Singh and S. Jit, “2-D Analytical Model for Electrical Characteristics of Dual Metal Heterogeneous Gate Dielectric Double-Gate TFETs with Localized Interface Charges,”  Silicon, Vol.13, pp. 2519–2527, August  2021
  10. U. Kasiviswanathan, S. Poddar, C. Kumar, S. Jit, S. K. Mahto, N. Sharma, “A Portable Standalone Wireless Electric Cell–Substrate Impedance Sensing (ECIS) System for Assessing Dynamic Behaviour of Mammalian Cells,” Journal of Analytical Science and Technology, Vol. 11(1), 25, June 2020
  11. K. Baral, P. Singh, S. Kumar, M.R. Tripathy, A. Singh, S. Chander, and S. Jit, “A 2D Compact DC Model for Engineered Nanowire JAM MOSFETs Valid for All 

Operating Regimes,” Semiconductor Science and Technology, Vol.35, pp.085014:1-11, July 2020.

  1. Y. S. Duksh, B. Singh, D. Gola, P. K. Tiwari and S. Jit, “Subthreshold Modeling of Graded Channel Double Gate Junctionless FETs,” Silicon, Vol.13, pp. 1231–1238, April 2021
  2. D. K. Jarwal, A. Kumar, A. K. Mishra, S. Ratan, R. K. Upadhayay, C. Kumar, B. Mukherjee, and S. Jit, “Fabrication and TCAD Validation of Ambient Air-Processed ZnO NRs/CH3NH3PbI3/Spiro-OMeTAD Solar Cells,” Superlattices and Microstructures, Vol. 143, 106540:1-10, July 2020.
  3. A. K. Singh,M. R.Tripathy, K. Baral, P. K. Singhand S Jit, “Investigation of DC, RF and Linearity Performances of a Back-Gated (BG) Heterojunction (HJ) TFET-on-SELBOX-Substrate (STFET): Introduction to a BG-HJ-STEFT Based CMOS Inverter,” Microelectronics Journal, Vol.102, pp. 104775:1-8, August 2020.
  4. K. Baral, P. Kumar, S. Kumar, A. K. Singh, M. R. Tripathy, S. Chander, and S. Jit, “2-D analytical modeling of drain and gate-leakage currents of cylindricalgate asymmetric halo doped dual material-junctionless accumulationmode MOSFET,” Int. J. Electron. Commun. (AEU), Vol.116, pp. 153071:1-8, March 2020
  5. K. Baral, P. Kumar, S. Kumar, S. Chander, and S. Jit, “Ultrathin body nanowire hetero-dielectric stacked asymmetric halo doped junctionless accumulation mode MOSFET for enhanced electrical characteristics and negative bias stability,” Superlattices and Microstructures, Vol. 138, pp.106364:1-15, February 2020
  6.  P S T N Srinivas, A. Kumar, S. Jit, and P.K.Tiwari, “Self-heating effects and hot carrier degradation in  In0.53Ga0.47As  Gate-All-Around (GAA) MOSFETs", Semiconductor Science and  Technology, Vol.35, pp.065008:1-8, May 2020
  7. M. R. Tripathy, A. K. Singh, K. Baral, P. K. Singh, and S. Jit, “III-V/Si Staggered Heterojunction Based Source-Pocket Engineered Vertical TFETs for Low Power Applications” Superlattices and Microstructures, Vol. 142, p.106494, June, 2020.
  8. D. K. Jarwal, A. K. Mishra, A. Kumar, S. Ratan, A. P. Singh, C. Kumar, B. Mukherjee and S. Jit, “Fabrication and TCAD Simulation of TiO2 Nanorods Electron Transport Layer Based Perovskite Solar Cells,” Superlattices and Microstructures, Vol. 140, pp.106463:1-11, April 2020
  9. P. K. Singh, K. Baral, S. Kumar, S. Chander, M. R. Tripathy, A. K. Singh and S. Jit, “Source pocket engineered underlap stacked-oxide cylindrical gate tunnel FETs with improved performance: design and analysis,”  Appl. Phys. A, Vol. 126, pp.166: 1-11, February 2020
  10. A. K. Singh, M. R. Tripathy, K. Baral, P. K. Singh, S. Jit, “Simulation Study and Comparative Analysis of Some TFET Structures with a Novel Partial-Ground-Plane (PGP) Based TFET on SELBOX Structure,” Silicon, Vol.12, pp.2345–2354, October 2020
  11. P. K. Yadav, V. K. Singh, C. Kumar, S. Chandra, S. Jit, S. K. Singh, M. Talat, and S. H. Hasan, “A Facile Synthesis of Green-Blue Carbon Dots from Artocarpus lakoocha Seeds and Their Application for the Detection of Iron (III) in Biological Fluidsand Cellular Imaging,” ChemistrySelect, Vol.4, pp.12252–12259, November 2019
  12. Kunal Singh, S. Kumar, P.K Tiwari, A.B Yadav, S. Dubey and S. Jit, “Semianalytical Threshold Voltage Model of Double-Gate Nanoscale RingFET for Terahertz Applications in Radiation Hardened (Rad-Hard) Environments,” Journal of Electronic Materials (JEMS), Vol. 48, pp. 6366–6371, 2019
  13. S. Chander, S. Baishya, S. K. Sinha, S. Kumar, P. K. Singh, K. Baral, M. R. Tripathy, A. K. Singh and S. Jit, “Two-Dimensional Analytical Modeling for Electrical Characteristics of Ge/Si SOI-Tunnel FinFETs,” Superlattices and Microstructures, Vol. 131, pp.30-39, July 2019
  14. K. Singh, S Kumar, E Goel, B Singh, P K Singh, K Baral, H Kumar, and S Jit , “ Effects of Source/Drain Elevation and Side Spacer Dielectric on Drivability Performance of Non-Abrupt Ultra Shallow Junction Gate Underlap GAA MOSFETs,” Indian Journal of Physics,  Vol. 92, pp 171–176, February 2018
  15. Shaivalini Singh, Pramod Kumar Tiwari, Hemant Kumar, Yogesh Kumar, Gopal Rawat, Sanjay Kumar, Kunal Singh, Ekta Goel, S. Jit and Si-Hyun Park, “Theoretical and Experimental Study of UV Detection Characteristics of Pd/ZnO Nanorod Schottky Diodes,” Nano, 12: 1750137(8), 2017.
  16. S. Chander, S. K. Sinha, S. Kumar, P. Singh, K. Baral, K. Singh and S. Jit, “Temperature Analysis of Ge/Si Heterojunction SOI-Tunnel FET,” Superlattices and Microstructures, Vol. 110, 162-170, 2017. DOI: 10.1016/j.spmi.2017.08.048
  17. Balraj Singh, Trailokya Nath Raia, Deepti Gola,  Kunal Singh, Ekta Goela, Sanjay Kumar, Pramod Kumar Tiwari, S. Jit, “Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure,” Materials Science in Semiconductor Processing, Vol. 71, pp. 161–165, 2017.
  18. Amritanshu Pandey, Archana Tripathi, Raghavi, S.K. Srivastava and S. Jit, “Analysis of Ternary Layer Photonic Band Gap Tunable Filters for WDM Applications,” J. Nanoelectronics and  Optoelectronics, Volume 12, pp. 331-336, 2017
  19. S. Singh, Y. Kumar, H. Kumar, S. Vyas, C. Periasamy, P. Chakrabarti, S. Jit, and Si-Hyun Park, “A study of hydrothermally grown ZnO nanorod-based metal-semiconductor metal UV detectors on glass substrates,” Nanomaterials and Nanotechnology, Vol 7, pp. 1-5, 2017.
  20. Shaivalini Singh, S. Jit, and Si-Hyun Park, “Characterization of Ag/ZnO Nanorod Schottky Diode-based Low-voltage Ultraviolet Photodetector,” Nano (World Scientific), Vol. 12, pp. 1-7, 2017.
  21. Ekta Goel, Sanjay Kumar, Balraj Singh, Kunal Singh, S. Jit, “Two-dimensional Model for Subthreshold Current and Subthreshold Swing of Graded-Channel Dual-Material Double-Gate (GCDMDG) MOSFETs,” Superlattices and Microstructures, Vol.106, pp. 147-155, 2017
  22. E. Goel, K. Singh, B. Singh, S. Kumar, and S. Jit, “2-D Analytical Modeling of Subthreshold Current and Subthreshold Swing for Ion-Implanted Strained-Si Double-Material Double-Gate (DMDG) MOSFETs,” Indian Journal of Physics, Vol. 91, Issue 9, pp 1069–1076, 2017.
  23. B. Singh, D. Gola, K. Singh, E. Goel, S. Kumar, and S. Jit, “Analytical Modeling of Subthreshold Characteristics of Ion-Implanted Symmetric Double Gate Junctionless Field Effect Transistors”, Materials Science in Semiconductor Processing, Vol. 58, pp.82-88, 2017.
  24. E. Goel, B. Singh, S. Kumar, K. Singh, and S. Jit, “Analytical Threshold Voltage Modeling of Ion-Implanted Strained-Si Double-Material Double-Gate (DMDG) MOSFETs,” Indian Journal of Physics, vol. 91 no. 4, pp. 383 – 390, 2017.
  25. K. Singh, M. Kumar, Ekta Goel, S. Kumar, K. Singh, B. Singh and S. Jit, “Effects of Elevated Source/Drain and Side Spacer Dielectric on the Drivability Optimization of Non-Abrupt Ultra Shallow Junction Gate Underlap DG MOSFETs,” Journal of Electronic Materials (JEMS), vol. 46 no. 1, pp. 520–526, 2017.
  26. K. Singh, M. Kumar, Ekta Goel, S. Kumar, K. Singh, B. Singh and S. Jit, “Subthreshold Current and Swing Modeling of Gate Underlap DG MOSFETs with Source/Drain Lateral Gaussian Doping Profile,” Journal of Electronic Materials (JEMS), vol. 46 no. 1, pp. 579–584, 2017
  27. Hemant Kumar, Yogesh Kumar; Gopal Rawat; Chandan Kumar; Bratindranath Mukherjee; Bhola Nath Pal; S. Jit, “Electrical and Optical Characteristics of Solution processed MoOx and ZnO QDs Heterojunction,” MRS Communications, Vol. 7, Issue 3, pp. 607-612, September 2017.
  28. K. Singh, M. Kumar, E. Goel, B. Singh, S. Dubey, S. Kumar, and S. Jit, “Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile”, Journal of Electronic Materials, Vol 45, No. 4, pp. 2184-2192, 2016
  29. S. Tiwari,  Ashutosh K. Dikshit, S. Jit, and P C Pandey, “Highly Sensitive Biochemical Sensor Based on Photonic Crystal Ring Resonator,” Optoelectronics and Advanced Materials –Rapid Communications, Vol. 10, pp. 509-513, 2016
  30. P. K. Tiwari, V. R. Samoju, T. Sunkara, S. Dubey, S. Jit, “Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs),”  J. Computational Electronics, Vol. 15 (2), pp 516-524, 2016  
  31. B. Singh, D. Gola, E. Goel, S. Kumar, K. Singh and S. Jit, “Dielectric Pocket Double Gate Junctionless FET: A New MOS Structure with improved Subthreshold Characteristics for Low Power VLSI Applications,” J. Computational Electronics, 15(2), 502-507, 2016
  32. A. Pandey, D. Somvanshi and S. Jit, “Electrical and
    Ultraviolet Detection Properties of n-ZnO Thin film/p-Si Heterojunction Diodes Using a ZnO Buffer Layer,” Journal of Nanoelectronics and Optoelectronics, Vol.10, pp. 219-225, April 2015
  33. Amritanshu Pandey, Snehlata Chanchal and S Jit, “WO3 Nanowire based Diode for Ultraviolet Light Sensing Applications,” Journal of Electron Devices, Vol. 21, pp. 1830-1833, 2015
  34. Purnima Hazra, S. K. Singh and S. Jit, “Impact of Surface Morphology of Si Substrate on Performance of Si/ZnO Heterojunction Devices Grown by ALD Technique,” J. Vac. Sc. Technol., Vol. A 33(1), pp. 01A114:1-5, 2015
  35. Visweswara Rao Samoju, S. Jit, and Pramod Kumar Tiwari, “A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate MOSFETs,” Chin. Phys. Lett. Vol. 31(12), pp.128502:1-3, 2014
  36. Gopal Rawat, Mirgender Kumar and S. Jit, “Analytical Modeling of Threshold Voltage of Ion-Implanted Strained-Si-on-Insulator (SSOI) MOSFETs,” Journal of Nanoelectronics and Optoelectronics, Vol. 9(3), pp. 442-448, June 2014.
  37. Gopal Rawat, Mirgender Kumar and S. Jit, “Analytical Modeling of Subthreshold Current and Subthreshold Swing of Gaussian-Doped (GD) Strained-Si-on-Insulator (SSOI) MOSFETs,” Journal of Semiconductors, Vol. 35(8), pp. 084001:1-8, 2014.
  38. Divya Somvanshi and S. Jit, “Analysis of I-V Characteristics of Pd/ZnO thin film/n-Si Schottky Diodes with Series Resistance,” Journal of Nanoelectronics and Optoelectronics, Vol.9(1), pp.21-26, 2014.
  39. Aniruddh Bahadur Yadav, Amritanshu Pandey and S. Jit, “Effects of Annealing Temperature on the Structural, Optical and Electrical Properties of ZnO Thin Films Grown on n-Si<100> Substrates by the Sol-Gel Spin Coating Method,” Acta Metallurgica Sinica (English Letters): Volume 27, pp. 682-688, 2014.
  40. Purnima Hazra, S. K. Singh and S. Jit “Ultraviolet photodetection properties of ZnO/Si heterojunction diode fabricated by ALD technique without using a buffer layer”, Journal of Semiconductor Technology and Science, Vol. 14, No. 1, pp. 117-123, 2014.
  41. Purnima Hazra and S. Jit, “p-Silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation technique”, Journal of Semiconductors, Vol. 35, No. 1, 014001, 2014.
  42. Abirmoya Santra, Mirgender Kumar, Sarvesh Dubey, S. Jit and Pramod Kumar Tiwari,  “Analytical modeling of threshold voltage of stacked Triple-Material-Gate (TMG) Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs,” Journal of Active and Passive Electronic Devices, Vol. 9, no 2-3, pp.235-257, 2014.
  43. Gopi Krishna S.,  Abirmoya Santra, Mirgender Kumar, Sarvesh Dubey, S. Jit,  Pramod Kumar Tiwari, “Analytical subthreshold current and subthreshold swing models for a short-channel dual-metal-gate   (DMG) fully depleted recessed-source/drain  (Re-S/D) SOI MOSFET,” Journal of Computational Electronics, Vol. 13, pp.467-476, 2014.
  44. Aniruddh Bahadur Yadav, Amritanshu Pandey and S. Jit, “Annealing-Temperature Effects on the Properties of ZnO Thin Films and Pd/ZnO Schottky Contacts Grown on n-Si (100) Substrates by Vacuum Deposition Method,” Superlattices and Microstructures, Vol. 71, pp. 250-260, 2014.
  45. Aniruddh Bahadur Yadav, C.Periasamy, Sudipta Bhaumikand S. Jit, “Room- Temperature Hydrogen Gas Sensing Properties of Pd/ZnO Thin Films Grown on n-Si<100> Substrates by Thermal Evaporation and Sol-Gel Techniques: A Comparative Study,” Indian Journal of Pure and Applied Physics, Vol.51, pp.792-799, November 2013.
  46. Divya Somvanshi, Amritanshu Pandey and S. Jit, “Ultraviolet Detection Characteristics of Pd/n-ZnO Thin Film Schottky Photodiodes Grown on n-Si Substrates,” Journal of Nanoelectronics and Optoelectronics, Vol. 8, pp. 349-354,2013.
  47. Sarvesh Dubey, A. Mirgender Kumar, Pramod Kumar Tiwari, and S. Jit, “Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs with Localized Charges,” Journal of Computational and Theoretical Nanoscience, Vol. 11(1), pp. 165-172, 2014.
  48. Purnima Hazra and S. Jit, “An In-House Approach for Fabrication of Silicon Nanowire
    Arrays using Electroless Metal Deposition and Etching Method,” International Journal of Surface Science and Engineering, Vol.7, No.3, pp.285 – 294, 2013.
  49. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “Analytical Models of Subthreshold Current and Swing of Short-Channel Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs,” Superlattices and Microstructures, Vol. 58, pp. 1-10, 2013.
  50. Purnima Hazra and S. Jit, “Studies on ZnO/Si heterojunction diode Grown by ALD Technique,” Journal of Nanoelectronics and Optoelectronics, Vol. 8, No. 4, pp. 378-382, 2013.
  51. Mirgender Kumar,Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “Analytical Modeling and Simulation of Subthreshold Characteristics of Back-Gated SSGOI and SSOI MOSFETs: A Comparative Study,” Current Applied Physics, Vol.13, pp.1778-1786, 2013.
  52. Purnima Hazra and S. Jit, “p-Si Nanowires/n-ZnO Thin Film Based Core-Shell Heterojunction Diodes with Improved Effective Richardson Constant,” Journal of Nanoscience and Nanotechnology, Vol. 14, No. 7, pp. 5380-5385, 2014.
  53. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “Two-Dimensional Modeling of Subthreshold Current and Subthreshold Swing of Double-Material-Gate (DMG) Strained-Si (s-Si) on SGOI MOSFETs,” Journal of Computational Electronics, Vol.12, pp.275-80, 2013.
  54. Shantanu Sarangi, Shiv Bhushan, Abirmoya Santra, Sarvesh Dubey, Pramod Kumar Tiwari, and S. Jit, “A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs,” Superlattices and Microstructures,Vol.60, pp. 263-279, 2013.
  55. Gopi Krishna S., Abirmoya Santra, Sarvesh Dubey, S. Jit, and Pramod Kumar Tiwari, “An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed- source/drain (Re-S/D) SOI MOSFET” Superlattices and Microstructures, Vol.60, pp.580-595, 2013
  56. Sarvesh Dubey, P.K.Tiwari and S. Jit, “On-Current Modeling of Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian-like Doping Profile,” Journal of Semiconductors, Vol.34(5), 054001:1-8, 2013.
  57. Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “An Analytical Model of Threshold Voltage for Short-Channel Double-Material-Gate (DMG) Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs,” Journal of Computational Electronics, Vol.12, pp.20-28, 2013.
  58. Shiv Bhushan, Santunu Sarangi, Abirmoya Santra, Mirgender Kumar, Sarvesh Dubey, S. Jit and P. K. Tiwari, “An analytical surface potential model for s-Si on SiGe MOSFET including the effects of interface charges,” Journal of Electron Devices, Vol. 15, pp. 1285-1290, 2012
  59. A. B. Yadav, C. Periasamy, P. Chakrabarti, and S. Jit, “Hydrogen gas sensing properties of Pd/nanocrystalline ZnO thin films based Schottky contacts at room temperature,” Adv. Sci. Eng. Med., Vol. 5, pp.112-118, 2013.
  60. Divya Somvanshi and S. Jit, “Fabrication and Characterization of ZnO Nanowires by Thermal Oxidation,” Advanced Materials Research, Vol.585, pp.124-128, 2012.
  61. Deepak Mishra, K. S. Dasgupta and S. Jit, “Efficient QPSK Burst Demodulator for Onboard Application”, International Journal of Computer Science and Information Technologies, Vol.3 (3), pp.4053-4058, 2012.
  62. Deepak Mishra, K S Dasgupta and S. Jit, “Concatenated Convolutional Codes for Deep Space mission”, International Journal of Information and Communication Technology Research,” Vol. 2 (6), pp. 512-518, June 2012.
  63. Deepak Mishra, K S Dasgupta and S.Jit, “Software Simulation of Unequal Error Protection Based Demodulator (Burst Mode) for Onboard Application”, International Journal of Computer Science and Information Technologies, Vol. 3 (4), pp.4670 – 4673, 2012.
  64. Pramod Kumar Tiwari, Sarvesh Dubey, Sarvesh  Dubey, Kunal Singh, and S. Jit, “Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs,” Superlattices and Microstructures, Vol. 51, pp. 715-724, 2012.
  65. Deepak Mishra, K S Dasgupta and S. Jit, “Hybrid Concatenated Convolutional Code for Deep Space Mission”, International Journal of Computer Applications, Vol. 47,  No.19, pp. 33-38, June 2011.
  66. Shweta Tripathi and S. Jit, “Transit-Time model for short-gate length ion-implanted GaAs OPFETs,” International Journal of Computer Applications (IJCA), (Special issues on International Conference on Electronics, Information and Communication Engineering (ICEICE), December 2011), pp.22-24, 2011.
  67. Pramod Kumar Tiwari and S. Jit, “A Threshold Voltage Model for  the Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile,  ”Journal of Nanoelectronics and Optoelectronics, Vol. 6, No. 2, pp. 207-213, June 2011.
  68. Pramod Kumar Tiwari, Sarvesh Dubey and S. Jit, “A Doping Dependent Threshold Voltage Model of Uniformly Doped Short-Channel Symmetric Double-Gate (DG) MOSFETs,” Journal of Nano- Electron. Phys., 3, No1, pp. 963-971, 2011.
  69. Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari and S. Jit, “Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (TM-DG) MOSFETs,” Journal of Nano- Electron. Phys. 3, No1, pp. 576-583, 2011.
  70. Shweta Tripathi and S. Jit, “A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs MESFETs Under Dark and Illuminated Conditions,” Journal of Nano- Electron. Phys. 3, No.1, 868-877, 2011.
  71. Pramod Kumar Tiwari and S. Jit, “Subthreshold Current Model for Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile,” Journal of Computational and Theoretical Nanoscience, 8, 1296-1303, 2011.
  72. Shweta Tripathi and S. Jit, “A Capacitance Model for the Optically Controlled Short-Gate Length GaAs MESFETs with a Vertical Gaussian-Like Doping Profile,” Journal of Electron Devices, vol.9, pp.352-261, March 2011.
  73. Shweta Tripathi and S. Jit, “A Two-Dimensional (2D) Analytical Model for the Potential Distribution and Threshold Voltage of Short-Channel Ion-Implanted GaAs MESFETs under Dark and Illuminated Conditions,” Journal of Semiconductor Technology and Science, vol.11, pp.40-50, March 2011.
  74. Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “A 2D model for the subthreshold swing of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile,” Journal of Applied Physics, vol.109, 054508:1-7, 2011.
  75. Shweta Tripathi and S. Jit, “Analytical model for Capacitance of Ion-Implanted short channel GaAs MESFET under Dark and Illuminated Condition,” Journal of Applied Physics, vol. 109, pp.053102:1-10, 2011.
  76. Sarvesh Dubey, Pramod Kumar Tiwari,  and S. Jit, “A 2D model for the potential distribution and threshold voltage of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile,” Journal of Applied Physics, vol.108, pp.034518:1-7, 2010.
  77. Pramod Kumar Tiwari, Sarvesh Dubey, Manjeet Singh and S. Jit, “A two-dimensional analytical model for threshold voltage of short-channel triple-material double gate (TM-DG) MOSFETs,” Journal of Applied Physics, vol.108, pp.074508:1-8, 2010.
  78. Pramod Kumar Tiwari and S. Jit, “Threshold voltage model for symmetric double-gate (DG) MOSFETs with non-uniform doping profile,” Journal of Electron Devices, vol. 7, pp.241-249, 2010.
  79. Pramod Kumar Tiwari and S. Jit, “A Doping-Dependent Subthreshold Current Model for Short-Channel Symmetric Double-Gate (DG) MOSFETs,” Journal of Nanoelectronics and Optoelectronics, vol.5, pp.82-88, 2010
  80. Pramod Kumar Tiwari   and   S. Jit, “A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping,” Journal of Semiconductor Technology and Science, vol.10, pp.107-117, 2010.
  81. Sarvesh Dubey, Pramod Kumar Tiwari and S. Jit, “A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile,” Journal of Nanoelectron. Optoelectron., vol. 5, pp.332-339, 2010.
  82. S. Jit, Prashant Kumar Pandey, Pramod Kumar Tiwari, “Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs,” Solid-State Electronics, vol. 53, pp. 57-63, 2009.
  83. Neti V.L.Narasimha Murty and S. Jit, “A new Semi-empirical Model for the Backgating Effect on the Depletion Width Modulation in GaAs MESFET’s,” IEEK-Journal of Semiconductor Technology and Science(JSTS), vol.08, pp. 104-109, 2008
  84. Neti. V. L. Narasimha Murty and S. Jit, “Analytical Modeling of Photo-Effects on the S-Parameters of GaAs MESFET’s,” Microwave and Optical Technology Letters, vol.48, pp.150-155, 2006.
  85. S. Jit and Neti V. L. Narasimha Murty, “Analytical Study of the Photo-Effects on Common-Source and Common-Drain Microwave Oscillators using High Pinch-Off n-GaAs MESFET’s,” Microelectronics Journal, vol.37, pp.452-458, 2006.
  86. Neti. V. L. Narasimha Murty and  S. Jit, “A Photo Dependent Capacitance Model of High Pinch-off GaAs MESFET’s,” Physica Status Solidi (a), vol. 203, pp.1005-1017, 2006.
  87. Neti. V. L. Narasimha Murty and S. Jit, “Static I-V Characteristics of Optically Controlled GaAs MESFET’s with Emphasis on Substrate Induced Effects,” IEEK- Journal of Semiconductor Technology and Sciences (JSTS), vol. 6, pp.210-224, Sept 2006.
  88. Neti. V. L. Narasimha Murty and S. Jit, “A New Analytical Model for the Photonic Capacitances of GaAs MESFET’s with Emphasis on the Deep Level Traps and Backgating Effects,” Solid-State Electronics, vol. 50, pp.1716-1727, Nov 2006.
  89. S. Jit, P. Pandey, A. Kumar, and S.K.Gupta, “Modified Boundary Condition at  Si-SiO2 Interface for the Modeling of Threshold Voltage and Subthreshold Swing of Short-Channel SOI-MESFET’s,” Solid State Electronics, vol. 49, pp.141-143, 2005.
  90. S. Jit, G. Bandhawakar and B.B.Pal, “Analytical Modeling of a DCFL Inverter Using Normally-off GaAs MESFET’s Under Dark and Illuminated Conditions” Solid-State Electronics, vol. 49, pp. 628-633, 2005.
  91. S. Jit, Saurabh Morarka, and Saurabh Mishra, “A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short-Channel Ion-Implanted Silicon MESFET’s,” Journal of Semiconductor Technology and Science, vol. 5, pp.69-77, Sept. 2005.
  92. S. Jit, and B.B.Pal, “A Simple Analytical Model for the Study of Optical Bistability using Multiple Quantum Well p-i-n Diode Structure,” Journal of Semiconductor Technology and Science, vol. 4, pp. 63-73, March 2004
  93. S. Jit, P. Pandey, and B.B.Pal, “A New Two-Dimensional Model for the Drain-Induced Barrier Lowering of Fully Depleted Short-Channel SOI-MESFET’s,” Journal of Semiconductor Technology and Science, vol. 3, pp.  217-222, Dec. 2003

B.        Research Papers Published in Refereed Conference Proceedings

  1. Jogendra Singh Rana, Shikha Singh, Santanu Das and S. Jit, “Room Temperature Graphene Nanoparticles/ZnO Nanorods based Ammonia Sensor,” IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO 2023), 2023 held at VISAT Engineering College, Kerala, Apr.27-28, 2023. (Paper will be appeared in the IEEE Xplore under IEEE Conference Series shortly)

  1. Shikha Singh, Jogendra Singh Rana, S. Jit, “Synthesis and Characterization of WSe2 Nano-flowers for NO2 Sensing”, IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO 2023), 2023 held at VISAT Engineering College, Kerala, Apr.27-28, 2023. (Paper will be appeared in the IEEE Xplore under IEEE Conference Series shortly)
  2. Deep Chandra Upadhyay, Rishibrind Kumar Upadhyay, Abhinav Pratap Singh and Satyabrata Jit, "Low Band Gap Polymer: Fullerene based Photodetector with Spectral Response from 350 nm to 850 nm," 2021 5th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech), 2021, pp. 1-4, doi: 10.1109/IEMENTech53263.2021.9614849.
  3. D. C. Upadhyay, R. K. Upadhyay, A. P. Singh and S. Jit, "White Light Photosensitivity and Stable Photoresponse Properties of Tetrapod Shaped CdSe Nanocrystals: Polymer: Fullerene Blend," 2022 IEEE VLSI Device Circuit and System (VLSI DCS), Kolkata, India, 2022, pp. 205-209, doi: 10.1109/VLSIDCS53788.2022.9811492.
  4. Rishibrind Kumar Upadhyay, and Satyabrata Jit “Photodetector based ZnONPs/BiFeO3 ferroelectric perovskite heterojunction” IEEE International Conference on Computing, Power and Communication Technologies (GUCON-2021), Kuala Lumpur Malaysia, Sep 24-26, 2021. DOI: 10.1109/GUCON50781.2021.9573822
  5. Amit Kumar, Deepak Kumar Jarwal, Ashwini Kumar Mishra, Smrity Ratan, Chandan Kumar, Rishibrind Kumar Upadhyay, Abhinav Pratap Singh, Bratindranath Mukherjee, and Satyabrata Jit, “Effect of Electron transport Layer (ZnO QDs) thickness on performance of PCDTBT: PCBM based bulk heterojunction organic solar cells” International Seminar cum Research Colloquium on MEMS based Sensors and Smart Nanostructured Devices (MSSND 2019), Jadavpur University, Kolkata, India, 2019.
  6. Smrity Ratan, Chandan Kumar, Amit Kumar, Deepak Kumar Jarwal, Ashwini Kumar Mishra, Rishibrind Kumar Upadhyay, and Satyabrata Jit, “Performance of ZnO Quantum Dots Based Photodetectors: Effect of Metal Electrodes,” IEEE INDICON, Coimbatore, India, 2018, pp. 1-4, doi: 10.1109/INDICON45594.2018.8987141
  7. Smrity Ratan, Devolina Mondal, Anima Rajendran, Chandan Kumar, Amit Kumar, Deepak Kumar Jarwal, Ashwini Kumar Mishra, Rishibrind Kumar Upadhyay, Rajib Kar and Satyabrata Jit. “Design of a High Gain Low Noise Amplifier Using 0.18μm CMOS Technology”. IEEE International Conference on Micro-Electronics and Telecommunication Engineering, 2018, pp. 308-313, doi: 10.1109/ICMETE.2018.00074.
  8. Smrity Ratan, Devolina Mondal, Chandan Kumar, Amit Kumar, Deepak Kumar Jarwal, Ashwini Kumar Mishra, Rajib Kar and Satyabrata Jit. “Optimization of Area of CMOS Differential Amplifier Using Modified PSO Algorithm”. IEEE International Conference for Convergence in Technology, 2018, pp. 1-6, doi: 10.1109/I2CT.2018.8529407.
  9. Deeepak Kumar Jarwal, Kamalaksha Baral, Ashish Kr. Singh, Prince Kr. Singh and Satyabrata Jit, “New Topologies of a Lossless Grounded Negative Inductor Using Single CDBA,” IEEE IEMENTech 2019, Kolkata, India,2019, pp. 1-6, doi: 10.1109/IEMENTech48150.2019.8981374..
  10. Deeepak Kumar Jarwal, Kamalaksha Baral, Manas Ranjan Tripathy, and Satyabrata Jit, “New Topologies of Second-Order Sinusoidal Oscillator Using Single CBDA,” MSSND 2019, Jadavpur, Kolkata, India, 2019.
  11. Deepak Kumar Jarwal, Ashwini Kumar Mishra, Amit Kumar, Smrity Rtan, Manas Ranjan Tripathy, Kamalaksha Baral,   Nitin   Kumar   Suyan,   Bratindranath   Mukherjee   and   Satyabrata   Jit “Performance Analysis and Experimental Validation of ZnO Nanorods ETL based Hybrid Perovskite Solar Cell,” ICONRER-2019, Jaipur, India, 2019.
  12. Ashwini Kumar Mishra, Deepak Kumar Jarwal, Bratindranath Mukherjee, Amit Kumar, Smrity Ratan, Manas Ranjan Tripathy, V. Mishra, and Satayabrata. Jit, “Design of High Speed Row Decoder with Redundant Memory (SRAM) Cell,” International Seminar cum Research Colloquium on MEMS based Sensors and Smart Nanostructured Devices (MSSND 2019), Jadavpur University, Kolkata, India, 2019.
  13. Kamalaksha Baral, Prince Kumar Singh, Sanjay Kumar, Sweta Chander, and Satyabrata Jit, “Performance Analysis and Optimization of Nanotube Junctionless Accumulation MOSFETs with Lateral HfO2/SiO2 Gate-oxide Structure,” Nanotechnology for Instrumentation & measurement Workshop, (NANOfIM-2017), GBTU , Noida , India, Nov.16-17, 2017.
  14. Kamalaksha Baral, Prince Kumar Singh, Sweta Chander, Kunal Singh, and Satyabrata Jit, “Performance Analysis of Nanotube Junctionless Accumulation Mode MOSFETs with Ion Implanted Doping Profile,’’ 3rd International Conference for Convergence in Technology (I2CT-2018), Pune, India, Apr.6-7, 2018, pp. 1-5, doi: 10.1109/I2CT.2018.8529584..
  15. Kamalaksha Baral, Prince Kumar Singh, Sanjay Kumar, Sweta Chander, Manas Ranjan Tripathy, and Satyabrata Jit, “Dual Material-Stacked Hetero-Dielectric-Junctionless Accumulation Mode Nanotube MOSFET for enhanced Hot Carrier and Trapped Charges Reliability,” 3rd Electron Devices Technology and Manufacturing (EDTM-2019), Singapore, Mar.13-15, 2019, pp. 330-332, doi: 10.1109/EDTM.2019.8731216.
  16. Prince Kumar Singh, Kamalaksha Baral, Ashish Kumar Singh, Manas Ranjan Tripathy, Rishibrind Kumar Upadhyay, Abhinav Pratap Singh, Satyabrata Jit, "Influence of Temperature on Analog/Radio Frequency Appearances of Heterojunction Cylindrical Gate Tunnel FETs," 2020 IEEE International Conference on Computing, Power and Communication Technologies (GUCON), 2020, pp. 511-515, doi: 10.1109/GUCON48875.2020.9231207.
  17. Prince Kumar Singh, Kamalaksha Baral, Sanjay Kumar, Ashish Kumar Singh, Manas Ranjan Tripathy, Rishibrind Kumar Upadhyay, Satyabrata Jit, "Subthreshold Swing Modeling of Gaussian Doped Double-Gate MOSFETs and its Validation Based on TCAD Simulation," 2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), 2020, pp. 1-4, doi: 10.1109/CONECCT50063.2020.9198488.
  18. Prince Kumar Singh, Kamalaksha Baral, Sweta Chander, Sanjay Kumar, Manas Ranjan Tripathy, Ashish Kumar Singh, S. Jit, "Impact of Gate Dielectrics on Analog/RF Performance of Double Gate Tunnel Field Effect Transistor," 2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech), 2019, pp. 1-5, doi: 10.1109/IEMENTech48150.2019.8981283.
  19. Prince Kumar Singh, Kamalaksha Baral, Manas Ranjan Tripathy, Ashish Kumar Singh, Rishibrind Kumar Upadhyay, Satyabrata Jit, " Impact of Temperature on DC and AC Characteristics of Stacked Oxide SiO2/HfO2 Cylindrical Gate Tunnel FETs," ICEE 2021.
  20. P. K. Singh, S. Kumar, S. Chander, K. Baral and S. Jit, "Impact of Strain on Electrical Characteristic of Double-Gate TFETs with a SiO2/RfO2Stacked Gate-Oxide Structure," 2017 14th IEEE India Council International Conference (INDICON), 2017, pp. 1-5, doi: 10.1109/INDICON.2017.8487500.
  21. Manas Ranjan Tripathy, Ashish Kumar Singh and Satyabrata Jit, "TCAD Assessment Based Device to Circuit-Level Performance Comparison Study of Source Pocket Engineered All-Si Vertical Tunnel FET and GaSb/Si Heterojunction Vertical Tunnel FET," 2020 IEEE 17th India Council International Conference (INDICON), New Delhi, India, 2020, pp. 1-5, doi: 10.1109/INDICON49873.2020.9342569.
  22. Manas Ranjan Tripathy, A Samad, Ashish Kumar Singh, Prince Kumar Singh, Kamalaksha Baral and Satyabrata Jit, "Device and Circuit-Level Performance Comparison of Vertically Grown All-Si and Ge/Si Hetero-Junction TFET," 2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bangalore, India, 2020, pp. 1-6, doi: 10.1109/CONECCT50063.2020.9198657.
  23. Manas Ranjan Tripathy, Ashish Kumar Singh, A Samad, Kamalaksha Baral, Prince Kumar Singh and Satyabrata Jit, "Performance Comparison of Ge/Si Hetero-Junction Vertical Tunnel FET with and Without Gate-Drain Underlapped Structure with Application to Digital Inverter," 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Penang, Malaysia, 2020. doi: 10.1109/EDTM47692.2020.9117840
  24. Manas Ranjan Tripathy, Ashish Kumar Singh, Sweta Chander, Prince Kumar Singh, Kamalaksha Baral and Satyabrata Jit, "Device-Level Performance Comparison of Some Pocket Engineered III-V/Si Hetero-Junction Vertical Tunnel Field Effect Transistor," 2020 5th International Conference on Devices, Circuits and Systems (ICDCS), Coimbatore, India, 2020, pp. 180-183. doi: 10.1109/ICDCS48716.2020.243576
  25. Manas Ranjan Tripathy, Ashish Kumar Singh, Kamalaksha Baral, Prince Kumar Singh, Ashwini Kumar Mishra, Deepak Kumar Jarwal, and Satyabrata Jit, "Study of Temperature Sensitivity on Linearity Figures of Merit of Ge/Si Hetero-Junction Gate-Drain Underlapped Vertical Tunnel FET with heterogeneous gate dielectric structure for Improving Device Reliability," 2020 URSI Regional Conference on Radio Science (URSI-RCRS), Varanasi, India, 2020, pp. 1-4, doi:10.23919/URSIRCRS49211.2020.9113520
  26. Manas Ranjan Tripathy, Ashish Kumar Singh, A Samad, Sweta Chander, Prince Kumar Singh, Kamalaksha Baral, Deepak Kumar Jarwal, Ashwini Kumar Mishra, and Satyabrat Jit "Performance Investigation of a p-Channel Hetero-Junction GaN Tunnel FET," 2019 IEEE MTT-S International Microwave and RF Conference (IMaRC), Mumbai, India, 2019, pp. 1-4, doi: 10.1109/IMaRC45935.2019.9118671
  27. Rishibrind Kumar Upadhyay, Abhinav Pratap Singh, Deepchandra Upadhyay, Prince Kumar Singh, Ashish Kumar Singh and Satyabrata Jit “ITO/ZnO/CH3NH3PbI3/Ag HetroStructure-based Photodetector” IEEE International Conference on Computing, Power and Communication Technologies (GUCON-2020), Radisson Blu, Greater Noida New Delhi, October 2-4, 2020, pp. 546-549, doi: 10.1109/GUCON48875.2020.9231181.
  28. Rishibrind Kumar Upadhyay, Abhinav Pratap Singh, Deepchandra Upadhyay, Smrity Ratan, and Satyabrata Jit “Fabrication and Characterization of SnO2/CH3NH3PbI3 Based Photodetector” Electron Devices Technology and Manufacturing Conference (EDTM), Malaysia, March 16-18, 2020, pp. 1-4, doi: 10.1109/EDTM47692.2020.9117808.
  29. Rishibrind Kumar Upadhyay, Abhinav Pratap Singh, Deepchandra Upadhyay, Amit Kumar, and Satyabrata Jit “Fabrication and Characterization of BiFeO3/CdSe Quantum Dot Based Photodetector” 64th DAE Solid State Physics Symposium, IIT Jodhpur, December 18-22, 2019.
  30. Rishibrind Kumar Upadhyay, Chandan Kumar, Abhinav Pratap Singh, Deepchandra Upadhyay, Deepak Kumar Jarwal, Amit Kumar, Smrity Ratan, and Satayabrata Jit "Fabrication and Characterization of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3 Based Metal-Semiconductor-Metal Photodetector" International IEEE Conference INDICON 2018, Coimbatore December 16-18, 2018, pp. 1-4, doi: 10.1109/INDICON45594.2018.8987020..
  31. A. K. Singh, M. R. Tripathy, K. Baral, P. K. Singh and S. Jit, "Ferroelectric Gate Heterojunction TFET on Selective Buried Oxide (SELBOX) Substrate for Distortionless and Low Power Applications," 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020, pp. 1-4, doi: 10.1109/EDTM47692.2020.9117858.
  32. A. K. Singh, Dhruvajyoti Barah, Manas Ranjan Tripathy, Kamalaksha Baral, Sweta Chander, Prince Kumar Singh and S. Jit, "Study and Investigation of DC and RF Performance of TFET on SEL-BOX and Conventional SOI TFET with SiO2/HfO2 Stacked Gate Structure," 2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech), 2019, pp. 1-5, doi: 10.1109/IEMENTech48150.2019.8981284.
  33. A. K. Singh, M. R. Tripathy, P. K. Singh, K. Baral, S. Chander and S. Jit, "DC and RF Performance Optimization of Strained Si/Si1-xGex Heterojunction SOI P-TFET," 2018 15th IEEE India Council International Conference (INDICON), 2018, pp. 1-5, doi: 10.1109/INDICON45594.2018.8987144.
  34. A. K. Singh, M. R. Tripathy, K. Baral, P. K. Singh and S. Jit, "Design and Investigation of Lateral HfO2/SiO2 Gate Stacked TFET on SELBOX Substrate for Low Power and High-Frequency Applications," 2020 URSI Regional Conference on Radio Science (URSI-RCRS), 2020, pp. 1-4, doi: 10.23919/URSIRCRS49211.2020.9113584.
  35. A. K. Singh, M. R. Tripathy, R. K. Upadhyay and S. Jit, "Design and Simulation of Triple Material Gate InAs/Si Heterojunction TFET on SEL-BOX Substrates: Temperature Impact Analysis," 2021 IEEE 4th International Conference on Computing, Power and Communication Technologies (GUCON), Kuala Lumpur, Malaysia, 2021, pp. 1-6, doi: 10.1109/GUCON50781.2021.9573526.
  36. Abhinav Pratap Singh, Rishibrind Kumar Upadhyay, Deepchandra Upadhyay, and Satyabrata Jit “Low-Cost Ag/PEDOT: PSS/ZnO Quantum Dot/ITO p-n Junction Based Photodetector” 4th International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech 2020), IEM Kolkatta, October 2-4, 2020, pp. 1-4, doi: 10.1109/IEMENTech51367.2020.9270121.
  37. Abhinav Pratap Singh, Rishibrind Kumar Upadhyay, Deepchandra Upadhyay, Amit Kumar, and Satyabrata Jit “Effect of Metal Electrode on Electrical and optical properties ZnO Quantum dot-based UV photodetector” 64th DAE Solid State Physics Symposium, IIT Jodhpur, December 18-22, 2019.
  38. Yogesh Kumar, Hemant Kumar,  Gopal Rawat, Varun Goel, Chandan Kumar, Bhola Nath Pal, Satyabrata Jit, “Fabrication and characterization of Photojunction Field Effect Transistor”, International Confrence on Signal Processing and Communication, JIIT Noida, 2018
  39. Sanjay Kumar, Kunal Singh, Sweta Chander, Prince Kumar Singh, Kamalaksha Baral, and S. Jit, “Influence of localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs”, International Conferences for Convergence of Technology (I2CT), 7-8th April, Pune2018.
  40. Sanjay Kumar, Kamalaksha Baral, Sweta Chander, Prince Kumar Singh, Balraj Singh and S. Jit, “Performance Evaluation of Double Gate III-V Heterojunction Tunnel FETs with SiO2/HfO2 Gate Oxide Structure”, IEEE International Symposium on Devices, Circuits and Systems (ISDCS), 29th - 31st March IIST Shivpur, India 2018.
  41. Sanjay Kumar, P. K. Singh, Sweta Chander, Ashvini Rahangdale , K. Baral, and S. Jit, “Dual-Material Ferroelectric Stacked Gate SiO2/PZT SOI Tunnel FETs with Improved Performance: Design and Analysis, 5th International Conference on Signal Processing and Integrated Networks (SPIN)), @Amity university, Noida, 2018.
  42. Sanjay Kumar, Kunal Singh, Sweta Chander, Prince Kumar Singh, Kamalaksha Baral, and S. Jit, “Temperature Sensitivity Analysis of Double Gate Tunnel FETs with SiO2/HfO2 Stacked Gate Oxide Structure”, Nanotechnology for Instrumentation & measurement Workshop, NANOfIM ,India 2017.
  43. Sanjay Kumar, Ashvini Rahangdale, Sweta Chander, Prince Kumar Singh, Kamalaksha Baral, and S. Jit, “A Simulation Based Study for Electrical Characteristics of SOI TFETs With Ferroelectric Stacked Gate Oxide Structure”, 14th IEEE India Council International Conference (INDICON), IIT Roorkee ,India, 2017.
  44. Ekta Goel, Sanjay Kumar, Kunal Singh, Balraj Singh and S. Jit, “An Analytical Model for Threshold Voltage Roll-off of Graded-Channel Dual-Material Double-Gate MOSFETs” International Conference On Nanoscience and Nanotechnology (ICNN 2017) organized by Babasaheb Bhimrao Ambedkar University, Lucknow India during 22 – 24 September, 2017.
  45. Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, Satyabrata Jit, “Solution processed MoO2 and ZnO Heterojunction Electrical and Optical Characteristics”, Materials Research Society (MRS) SPRING MEETING & EXHIBIT, held in Phoenix, Arizona, U.S.A, April 17-21, 2017. DOI: https://mrsspring.zerista.com/poster/member/85249
  46. Yogesh Kumar, Hemant Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, Satyabrata Jit, “Mg Doping Effects on Optical and Electrical Properties of Solution-Processed ZnO Quantum Dots Based Thin Film Devices”, Materials Research Society (MRS) SPRING MEETING & EXHIBIT, held in Phoenix, Arizona, U.S.A, April 17-21, 2017. DOI: https://mrsspring.zerista.com/poster/member/85250
  47. Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakash and Satyabrata Jit, “Poly (3, 3'''- dialkylquaterthiophene) Based Organic Thin Film Transistor Under Green Light Illumination”, (Accepted), 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), held in Singapore during 2nd – 4th October 2017.
  48. Hemant Kumar, Yogesh Kumar, Bratindranath Mukherjee, Gopal Rawat, Chandan Kumar, Bhola Nath Pal, Satyabrata Jit “Effect of Electrode on Spectrum Selectivity and Photoresponse of the Colloidal-QD Based Schottky Photodiode” , (Accepted), MATERIALS RESEARCH SOCIETY 2017MRS Fall Meeting,  will be held at the Hynes Convention Center and Sheraton Boston Hotel in Boston, Massachusetts, USA during November 26-December 1, 2017.
  49. Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bhola Nath Pal, Satyabrata Jit, “Optical Characteristics of Solution Processed MoO2/ZnO Quantum Dots based Thin Film Transitor”, IEEE International Symposium on Nanoelectronic and Information Systems (IEEE-iNIS) held at ABV-IIITM, Gwalior, India, pp. 19-21, Dec. 2016.
  50. Yogesh Kumar, Hemant Kumar, Gopal Rawat, Chandan Kumar, Bhola.N Pal and S. Jit, “Electrical and optical characteristics of Pd/ZnO Quantum dots based Schottky Photodiode on n-Si”, IEEE International Symposium on Nanoelectronic and Information Systems (IEEE-iNIS), held at ABV-IIITM, Gwalior, India, pp. 214-217, Dec. 2016.
  51. Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bhola Nath Pal, Satyabrata Jit, “Electrical and Optical Characteristics of CdSe Quantum Dot based Schottky Diode”, 11th International Conference on Industrial and Information Systems (ICIIS 2016), held at IIT, Roorkee, India, pp. 3-4 Dec. 2016.
  52. Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakash, Satyabrata Jit “Photoresponse in Poly (3, 3'''-dialkylquarterthiophene) Based Metal-Semiconductor-Metal Structure”, in Optics & Photonics Taiwan, the International Conference (OPTIC 2016), held in Taipei, Taiwan during December 3-5, 2016.
  53. Purnima Hazra and S. Jit, “Fabrication and characterization of p-type silicon nanowire (SiNW)/n-type ZnO based core-shell heterostructures for optoelectronic applications”, IOP Conf. Ser.: Mater. Sci. Eng. 73 012092, 2015.
  54. Gopal Rawat, Hemant Kumar, Yogesh Kumar, Chandan Kumar, Divya Somvanshi and Satyabrata Jit, “Structural and Optical Characteristics of n-TiO2 Thin Films by Sol-Gel Method”, 12th IEEE India International Conference, (INDICON 2015), held at Jamia Millia Islamia, New Delhi, India, pp. 1-4, Dec. 2015.  
  55. Sanjay Kumar, Ekta Goel, M. Kumar, K. Singh and S. Jit, “Surface Potential based  Subthreshold Current Modeling of DG MOSFETs with Non-uniform Doping in the Vertical Direction”, 4th International Conference on Current Developments in Atomic,  Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March @ University of Delhi, Delhi.
  56. Ekta Goel, Sanjay Kumar, M. Kumar and S. Jit, “Two Dimensional Analytical Threshold Voltage Model of Strained Silicon Double-Gate (DG) MOSFETs with vertical Gaussian-like Doping Profile”, 4th International Conference on Current Developments in Atomic, Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March @ University of Delhi, Delhi.
  57. Mirgender Kumar, and S. Jit, “Negative Differential Conductivity based Strained-Si MOSFET for THZ Generation”, 4th International Conference on Current Developments in Atomic, Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March @ University of Delhi, Delhi.
  58. Yogesh Kumar, Hemant Kumar, K. Singh, Bhola N Pal and S Jit. “Optical Characterization of Sol-Gel deposited Zinc Oxide Thin Film” 4th International Conference on Current Developments in Atomic, Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March 2015, held at University of Delhi, Delhi.
  59. Hemant Kumar,Yogesh Kumar, K. Singh, Bhola N Pal and S Jit, “Ultra-Violet Detection Characteristics of MoO2/ZnO based Thin Film Sensor Grown on Al2O3/p-Si Substrates”, 4th International Conference on Current Developments in Atomic, Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March 2015, held at University of Delhi, Delhi.
  60. Deepti Gola, Balraj singh and S. Jit, “Performance Investigation of Short-channel Double-Gate Junctionless FET (DG-JLFET) with Gaussian Doping Profile” 4th International Conference on Current Developments in Atomic, Molecular, Optical and Nano Physics with applications (CDAMOP-2015), 11th-14th March @ University of Delhi, Delhi.
  61. Piyush Kumar Pushkar, Sanjay Kumar, Kunal Singh, A P Singh, and S. Jit. “Analytical Modeling of Threshold Voltage of Strained-Si Double-Gate (DG) Tunnel-field-effect Transistors (TFETs)” 2nd International Conference on Nanotechnology (ICNT-2015)19th-22th Feb@ Haldia Institute of Technology. ISBN: 978-81-927756-2-3, pp 199-202, 2015.
  62. Neetu Singh, Ekta Goel, Piyush Kumar Pushkar, M Kumar and S. Jit, “Analytical Modeling and Simulation of Subthreshold Swing of Hetero-Gate-Dielectric (HGD) Silicon-on-Insulator (SOI) MOSFETs” 2nd International Conference on Nanotechnology (ICNT-2015)19th-22th Feb@ Haldia Institute of Technology. ISBN: 978-81-927756-2-3, 2015.
  63. Abhinav Pratap Singh, Kunal Singh, Sanjay Kumar, Neetu Singh, and S. Jit, “Surface Potential based Threshold Voltage Model of High-k Double-Gate (DG) MOSFETs with Gaussian-like Doping Profile” 2nd International Conference on Nanotechnology(ICNT-2015)19th-22th Feb@ Haldia Institute of Technology. ISBN: 978-81-927756-2-3, 2015.
  64. Purnima Hazra and S. Jit, “Electrical characteristics of Si/ZnO core-shell nanowire heterojunction diode”, Physics of Semiconductor Devices, ed. by V.K. Jain and A. Verma, Springer, pp. 673-675, 2014.
  65. Ashutosh Kumar Dikshit, P C Pandey, S Tiwari and S. Jit, “Tunable Resonator based photonic crystal optical switch” 2nd IEEE International Conference on Emerging Electronics (ICEE-2014), 3rd-6th Dec.@ Indian Institute of Science, Bengaluru.
  66. Varun Goel, Sanjay Sharma, Sanjay Kumar, and S. Jit, “Two Dimensional Analytical Model for Threshold Voltage of Graded-Channel SOI MOSFETs” 2nd IEEE International Conference on Emerging Electronics (ICEE-2014), 3rd-6th Dec.@ Indian Institute of Science, Bengaluru.
  67. Ashutosh Kumar Dikshit, P C Pandey, S Tiwari,  Amritanshu Pandey and  S. Jit, “Circular Resonator based Optical Switch,” 12th IEEE International Conference on Fiber Optics and Photonics.13th-16th Dec.2014@ Dept. of Physics, IIT Kharagpur, India.
  68. Ekta Goel, Sanjay Kumar, Neetu Singh, M Kumar, and S. Jit, “Subthreshold Swing Model of Short-Channel High-k Gate Stack Double-Gate (DG) MOSFETs” National conference on Research and Innovations in Electronics & Communication Engineering (RIECE-2014) 10th-11th Oct. @ Noida Institute of Engineering and Technology, UP.
  69. Gopi Krishna Saramekala, S. Jit, and Pramod Kumar Tiwari, “ATLAS based simulation study of the electrical characteristics of dual-metal-gate (DMG) fully-depleted recessed-source/drain (RE-S/D) SOI MOSFETS” IEEE Conference ICAEE' 2014, VIT University Vellore, Jan 9-11, 2014.
  70. E. Goel, S. Kumar, G. Rawat, Mirgender Kumar, S. Dubey, S. Jit, “Two Dimensional Model for Threshold Voltage Roll-Off of Short Channel High-k Gate-Stack Double-Gate (DG) MOSFETs,” 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), @Amity university, Noida, Springer conference proceeding, pp. 193-196, 2014.
  71. S. Kumar, E. Goel, G. Rawat, Mirgender Kumar, S. Dubey, S. Jit, “Threshold Voltage Modeling of Short-Channel DG MOSFETs with Non-Uniform Doping in the Vertical Direction,” 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), @Amity university, Noida, Springer conference proceeding, pp. 263-266, 2014.
  72. G. Rawat, Mirgender Kumar, S. Dubey, S. Jit, “An Analytical Study of Ion Implanted Strained-Si on SOI MOSFETs for Optimizing Switching Characteristics,” 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), @Amity university, Noida, Springer conference proceeding, pp. 203-206, 2014.
  73. Gopal Rawat, Sanjay Kumar, Ekta Goel, Mirgender Kumar, Sarvesh Dubey and S. Jit, “An Analytical Study of Gaussian Doped Strained-Si on SOI MOSFETs for Optimizing Off-State Current”, International Conference on Nanoscience & Nanotechnology (ICNN-2013), held at Babasaheb Bhimrao Ambedkar University, Lucknow, India, 18th -20th  Nov., 2013.
  74. Sanjay Kumar, Ekta Goel, Gopal Rawat, Kunal Singh, Mirgender Kumar, Sarvesh Dubey and S. Jit, “Surface Potential Based Subthreshold Swing Modeling of Symmetric Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile”, International Conference on Nanoscience & Nanotechnology (ICNN-2013), held at Babasaheb Bhimrao Ambedkar University, Lucknow, India, 18th -20th  November, 2013.
  75. Ekta Goel, Sanjay Kumar, Gopal Rawat, Mirgender Kumar, Sarvesh Dubey and S. Jit, “An Analytical Model for Threshold Voltage Roll-off of Short-Channel DG MOSFETs with High-k Gate Stack”, International Conference on Nanoscience & Nanotechnology (ICNN-2013), held at Babasaheb Bhimrao Ambedkar University, Lucknow, India, 18th -20th  November, 2013.
  76. Ekta Goel, Gopal Rawat, Sanjay Kumar, Mirgender Kumar, Sarvesh Dubey and S. Jit, “Surface Potential Based Subthreshold Current Model of High-k Gate Stack Double-Gate (DG) MOSFETs”, International Conference on Nanotechnology (ICNT - 2013), held at HIT, Haldia, West Bengal, India, 25th -26th October, 2013.
  77. Sanjay Kumar, Ekta Goel, Gopal Rawat, Mirgender Kumar, Sarvesh Dubey and S. Jit, “Analytical Modeling of Subthreshold Swing Based on Surface Potential of Non-Uniformly Doped Double-Gate (DG) MOSFETs”, International Conference on Nanotechnology (ICNT – 2013), held at HIT, Haldia, West Bengal, India, 25th -26th October, 2013.
  78. E. Goel, Mirgender Kumar, S. Dubey and S. Jit, “A Threshold Voltage Model of High-k Gate Stack Short-Channel Double-Gate (DG) MOSFETs,” National Conference on Nanoscience and Instrumentation Technology, @NIT, Kurukshetra, March 28-29, 2013.
  79. Gopi Krishna S.,  Abirmoya Santra, S. Jit, and  Pramod Kumar Tiwari, “An analytical surface potential modeling of dual-metal-gate (DMG) recessed- source/drain (Re-S/D) SOI MOSFET,” International Conf. on Advanced Trends in Engineering and Technology, Dec 19-20, 2013, Jaipur, India, pp.160-163
  80. S. Kumar, Mirgender Kumar, S. Dubey and S. Jit, Analytical modeling of Surface Potential and Threshold Voltage of Non-uniformly doped Double-Gate (DG) MOSFETs, National Conference on Nanoscience and Instrumentation Technology, NIT, Kurukshetra, March 28-29, 2013.
  81. Purnima Hazra and S. Jit, “Study of n-ZnO/ p-SiNW heterostructures grown by thermal evaporation method,” AIP Conf. Proc. 1536, 529-530, 2013.
  82. Divya Somvanshi and S. Jit, “Catalyst free growth of ZnO nanorods by thermal evaporation method,” International Conference on Recent trends in Applied physics and Material Science (RAM-2013) held in the Govt. college of Engg. and Technology, Bikaner during Feb 01-02, 2013  (will be published in the AIP proceeding).
  83. Mirgender Kumar, S. Dubey, P. K. Tiwari, S. Jit, A Comparative Study of Short-Channel-Effects of strained-Si on Insulator (SSOI) and strained-Si on Silicon-Germanium-on-Insulator (SSGOI) MOSFETs, in International Conference on Electrical and Electronics Engineering (ICEEE-2013), @WCE conference proceeding, London, July 04-06, 2013.
  84. Mirgender Kumar, S. Dubey, P. K. Tiwari, and S. Jit, “Back Gated (BG) Strained-Si-on-Silicon-Germanium-on-Insulator (SSGOI) MOSFETs for Improved Switching Speed and Short-Channel-Effects (SCEs)”, in international conference on Recent Trends in Applied Physics and Material Science, @AIP conference proceeding, pp. 321-322, Bikaner, Feb 01-03, 2013.
  85. Mirgender Kumar, S. Dubey, P. K. Tiwari, and S. Jit, “Quantitative Performance Investigations of Back Gated Strained-Si-on-Insulator (SSOI) MOSFETs: Towards Double-Gate (DG) Operation”, in international conference on Nanoelectronics and Nano devices (ICNEND), @SNEM conference proceeding, Chennai, Jan. 21-22, 2013.
  86. Mirgender Kumar, S. Dubey, P. K. Tiwari and S. Jit, “A 2D Analytical Modeling Approach for Nanoscale Strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs by Evanescent Mode Analysis”, in International Conference on Communications, Devices and Intelligent Systems (CODIS), @ IEEE conference proceeding, Calcutta, December 28-29, 2012.
  87. Mirgender Kumar, S. Dubey, P. K. Tiwari and S. Jit, “An Analytical Modeling of Interface Charge Induced Effects on Subthreshold Current and Subthreshold Swing of strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs”, in International Conference on Computers and Devices for Communication (CODEC) @ IEEE conference proceeding, Calcutta, December 17-19, 2012.
  88. Mirgender Kumar,S. Dubey, P. K. Tiwari and S. Jit, “Analytical Study of Interface Charges Effect on Short Channel Effect of Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs”, in International Conference on Quantum, Nano and Micro Technologies (ICQNM), ©IARIA conference proceeding, Rome, August 19 - 24, 2012.
  89. Divya Somvanshi and S. Jit, “Synthesis and characterization of tin catalyzed ZnO nanoparticles grown on n-Si substrate by thermal evaporation method,” Proc. SPIE 8760, International Conference on Communication and Electronics System Design, 87600G, January 28, 2013; doi:10.1117/12.2010345 (International Conference on Communication and Electronic System Design (ICCESD-2013) in NIT Jaipur)
  90. Divya Somvanshi and S. Jit, “Fabrication and characterization of ZnO nanowires by thermal oxidation method,” International Conference on Advance in Materials Processing: Challenges and Opportunities (AMPCO-2012) held in IIT Roorkee, India during November 02-04, 2012.  (Published in the Advanced Materials Research, 585, pp 124-128, 2012.    (10.4028/www.scientific.net/AMR.585.124)
  91. Divya Somvanshi, P. Chakrabarti and S. Jit, “Tin catalyzed growth of ZnO nanoparticles,” International conference on Material Science and Technology (ICMST-2012) held in Kottayam Pala during June 10-14, 2012 (will be published in IOP proceeding).
  92. Mirgender Kumar, Sarvesh Dubey, P. K. Tiwari and S. Jit, "Analytical Modeling and ATLAS Based Simulation of the Surface Potential of Double-Material-Gate Strained-Si on Silicon-on-Germanium-on-Insulator (DMG-SGOI) MOSFETs” in Proc. IEEE International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT-2011), pp. 228-231 (December 17-19, 2011 at AMU, Aligarh).
  93. A. Santra, Sarvesh Dubey, Mirgender Kumar, Pramod Kumar Tiwari and S. Jit “An Analytical Study of the Effect of Interface Charges on the Surface Potential of Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs” in Proc. National Conference on Emerging Trends in Electrical and Electronics Engineering (ETEEE-2011) pp.56-57 (November 26-27, 2011 at K.N.I.T., Sultanpur).
  94. Mirgender Kumar, Sarvesh Dubey, P. K. Tiwari and S. Jit, "Extremely Scaled EOT Bi-Layered High-k stacked Double-Material Double-gate Strained-Si MOSFET for High Performance Band-Edge (BE) CMOS Technology” in Proc. National symposium on Recent Advances in Nanosciences, Engineering & Technology  (RANET-2011) pp. 76 (November 19-20, 2011 at ABV-IIITM, Gwalior).
  95. H. Agnihotri, A. Ranjan, P. K. Tiwari, and S. Jit, “An analytical drain current model for  short-channel triple-material double gate MOSFETs,” Proc. 2011 IEEE Computer Society Annual Symposium on VLSI (ISVLSI),  pp. 327 – 328 (Published by IEEE Computer Society with ISSN :  2159-3469) (Conference held during July 4-6, 2011,  Chennai, India).
  96. Pramod Kumar Tiwari, Sarvesh Dubey, Manjeet Singh and S. Jit, “An Analytical Subthreshold Current Model for Triple Material Double Gate (TMDG) MOSFETs,” in Proc. International Conference on Electronics System-2011, pp.142-145, 2011 (ICES, January 7-9, 2011 at NIT Raurkela).
  97. Shweta Tripathi and S. Jit, "Analytical Modeling of Frequency Dependent Characteristics of an Ion-Implanted Short Channel GaAs OPFET" in Proc. International Conference on Electronics System-2011, NIT Rourkela, pp.135-138, 2011 (ICES, January 7-9, 2011 at NIT Raurkela).
  98. P. K. Tiwari, S. Dubey, and S. Jit, “Subthreshold swing model for asymmetric 3T double gate (DG) MOSFETs,” IEEE Conf. Proc. 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1796-1798, 2010 held at Shanghai, China, Nov. 01-04, 2010.
  99. Pramod K.Tiwari, Sarvesh Dubey and S. Jit, “Substhreshold current model for short-channel double-gate (DG) MOSFETs with vertical Gaussian doping profile,” Latest Trends on Circuits, Systems and Signals (4th International Conference on Circuits, Systems and Signals (CSS’10), Corfu Island, Greece, July 22-25, 2010), Published by the World Scientific and Engineering Academy and Society (WSEAS) Press, 2010, pp.27-34.
  100. Pramod Kumar Tiwari, Chinmaya Ranjan Panda, Anupam Agarwal, Prateek Sharma and S. Jit, “Analytical Modeling of Effective Conduction Path Effect (ECPE) on the Subthreshold Swing of DG-MOSFETs,” IEEE Conference Proceedings of the 2009 Spanish Conference on Electron Devices (CDE 2009), Feb 11-13, 2009, Santiago de Compostela, Spain, pp. 136-139.
  101. P.K. Tiwari,   S. Kumar,   S. Mittal,   V. Srivastava,   U. Pandey,  and S. Jit, “A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile,” IEEE Conference Proceedings of the International Conference on Multimedia, Signal Processing and Communication Technologies, 2009 (IMPACT '09). March 14-16, 2009, Aligarh Muslim University, India, pp. 52-55.
  102. S. Dubey, P. K. Tiwari, and S. Jit, “Analytical Modeling of 2D Channel Potential of DG MOSFETs with a Gaussian-Like Vertical Doping Profile,” Proc. of the 15th International Workshop on the Physics of Semiconductor Devices (IWPSD-2009), (Publisher: Excel India Publisher, New Delhi); December 15-19, 2009; Jamia Millia Islamia, New Delhi; pp.192-193.
  103. K.L. Sah, K. S. Dasgupta, and S. Jit, “Novel performance of QPSK modulator subsystem with matched filters for GSAT-4 satellite,” IEEE Conf. Proc. International Conference on Emerging Trends in Electronic and Photonic Devices & Systems (ELECTRO-2009), pp.281-284, 2009 (held at IT-BHU, Dec.22-24, 2009).
  104. S. Jit, A. B. Weerasekara,R.C. Jayasinghe, S. G. Matsik, and A. G. U. Perera, “An n-doped GaAs/AlGaAs multi-layered HEIWIP based terahertz photodetector,” IEEE Conf. Proc. National Workshop on Advanced Optoelectronic Materials & Devices (AOMD-2008),” pp.213-216, 2008 held at IT-BHU, Varanasi, India Dec.22-24, 2008.
  105. Neti V. L. Narasimha Murty and S. Jit, “Photo-Effects on  Static I-V Characteristics of GaAs MESFET’s: Role of Deep Level Traps and Backgating,” International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS-2006), pp. C25-C27, Jan. 2-6, 2006, University of Calcutta, Kolkata, India.
  106. S. Jit and Ravish Sunny, “A New 2-D Analytical Model for the Potential Distribution and Threshold Voltage of Short-Channel SOI-MOSFET’s,” International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS-2006), pp.D16-D18, Jan. 2-6, 2006, University of Calcutta, Kolkata, India.
  107. Neti V. L. Narasimha Murty, and S. Jit, “An Analytical model for the S-parameters of Optically Controlled GaAs MESFET’s,” IEEE Conf. Proc. 2005 Spanish Conference on Electron Devices (IEEE Cat. No.05EX965), held at Tarragona, Spain,  Feb.2-5, 2005), Feb.2-5, 2005, pp. 103-106.
  108. Neti V. L. Narasimha Murty and S. Jit, “Analytical Modeling of Photo-Effects on the Frequency-Dependent Output Conductance of GaAs MESFET’s,” Physics of Semiconductor Devices (IWPSD-2005), Allied Publishers Pvt. Limited, Vol. 1, pp.125-128, 2005 (13th International Workshop on the Physics of Semiconductor Devices,  held during Dec. 13-17, 2005, New Delhi, India).
  109. P. Pandey, B.B.Pal, and S. Jit, “A New Two-Dimensional Analytical Model for the   Potential Distribution and Drain-Induced Barrier Lowering of Short-Channel Ion-Implanted Si-SOI-MESFET’s,” International Conference on  Computers and  Devices for Communication (CODEC-04) held during January 01-03, 2004  in Hyatt Regency  Kolkata,  Kolkata,  India, EDM-3, p.105.
  110. S. Jit, Saurabh Morarka and Saurabh Mishra, “A New 2-D Model for the Potential Distribution of Ion-Implanted Short-Channel Silicon MESFET’s,”  2004 Asia - Pacific Microwave Conference  (APMC’04)  held during Dec 15-18, 2004, Hotel Ashok, New Delhi,  India, p. 968.
  111. Prashant Pandey, Saurabh Morarka, Saurabh Mishra, B.B.Pal and S. Jit, “A Subthreshold Current Model for Short-Channel Si-SOI MESFET’s,”  2004 Asia-Pacific Microwave Conference (APMC’04) held during Dec 15-18, 2004, Hotel Ashok, New Delhi,  India, 1024.
  112. Neti.V.L.Narasimha Murty, and S. Jit, “A New Capacitance Model of Optically Controlled GaAs MESFET’s,” 2004 Asia-Pecific Microwave Conference (APMC’04) held during Dec 15-18, 2004, Hotel Ashok, New Delhi, India, p.1022.
  113. P. Pandey, B.B.Pal, and S. Jit, “A New Two-Dimensional Analytical Model for Threshold Voltage of Fully Depleted Short-Channel Si-SOI-MESFET’s,” Physics of Semiconductor Devices (IWPSD-2003), Narosa Publishing House, New Delhi, India, pp. 606-608.
  114. S. Jit, and B.B.Pal, “A Semi-Analytical Model for the Study of Optical Bistability using Multiple Quantum Well p-i-n Diode Structure,” Physics of Semiconductor Devices (IWPSD-2003), Narosa Publishing House, New Delhi, India, pp. 941-943.
  115. S. Jit and B.N. Tiwari, “Optically Controlled Microwave Oscillator using GaAs   MESFET’s,” Physics of Semiconductor Devices (IWPSD-2003), Narosa Publishing House, New Delhi, India, pp. 803-805.
  116. S. Jit, and B.B.Pal, “Light-Source Integrated OPFET (LSI-OPFET): A New Optoelectronic Integrated Device for Optically Tuned Microwave Oscillators,”  Proc. Photonics-2002, p.246, TIFR, Mumbai, Dec.16-18, 2002.
  117. G. Bandhawakar, S. Jit  and B.B.Pal, “An Analytical Model for Optically Controlled Inverter using Normally-off MESFET’s,”  Proc. SBMO/IEEE MTTS IMOC 2003, pp.683-688.
  118. S. Jit, and B.B. Pal, “Light Source Integrated OPFET (LSI-OPFET): A New Optoelectronic Integrated Device for Optically Controlled Varying Gain Amplifier,”  Proc. SPIE, Vol.4905, pp.497-507, 2002
  119. S. Jit and B.B.Pal, “Optical Amplification and Switching using OPFETs,” presented in the Indo Japanese Workshop on Micro-System Technology, Nov.23-25, 2000, Delhi University,  India
  120. S. Jit and B.B.Pal, “OPFET-LAOS: A New Optoelectronic Integrated Device for  Light Amplifying Optical Switch”, Proc. SPIE, Vol. 4580, pp.131-140, Nov.2001 

   C.      Books Published/Edited:

  1. Jacob Millman, Christos C. Halkias, and Satyabrata Jit, Millman’s Electronic Devices and Circuits, 4e,  Tata McGraw-Hill Publishing Company Limited, New Delhi, 2015.
  2. P. Chakrabarti, S. Jit and A. Pandey, “Emerging Trends in Electronic and Photonic Devices & Systems,” Macmillan Publishers India Limited, New Delhi, 2009
  3. P. Chakrabarti and S. Jit, “Advanced Optoelectronic Materials and Devices,” Macmillan Publishers India Limited, 2008.
  4. P. Chakrabarti, S. Jit and R. Kumar, “Recent Advances in Micro-Electro Mechanical Systems,”  Macmillan Publishers India Limited, New Delhi, 2011
  5. S. Jit, “Advances in Microelectronics and Photonics” Nova Science Publisher, New York, USA (2012)
  6. S. Jit and S. Das, "2D Nanoscale Heterostructured Materials" Elsevier (2020)

D.     Guest Editor of International Journal
           

  1. Fangyu Yue, Satyabrata Jit, and Weida Hu, The Scientific World Journal (Special Issue on Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications), Vol. 2014 (2014)
  2. D Nirmal, Wladek Grabinski, J Ajayan, Satyabrata Jit, Special Issue on Energy Harvesting Devices, Circuits and Systems for Internet of Things, Microelectronics Journal, Vol. 92 (October) & Vol. 93 (November) 2019.

 
E.   Book Chapter

  • P. K. Tiwari, S. Dubey and S. Jit, “Double-Gate (DG) MOSFETs: A Review,” in Advances in Microelectronics and Photonics” published by the Nova Science Publisher, Inc., New York, USA (2012)
  • C. Kumar, S. Das and S. Jit, “Device physics and device integration of two-dimensional heterostructures,” in 2D Nanoscale Heterostructured Materials: Synthesis, Properties and Applications published by Elsevier (2020)
  • D. Somvanshi and S. Jit, “2-D nano-heterostructure for optoelectronic applications,” in 2D Nanoscale Heterostructured Materials: Synthesis, Properties and Applications published by Elsevier (2020)
  • H. Kumar and S. Jit, “CdSe - based photodetectors for visible-NIR spectral region,” Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors, Volume 2: Photodetectors by Ghenadii Korotcenkov (Editor)  published by the Springer in 2023.
  • H. Kumar and S. Jit, “Self-Powered Photodetector,” Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 2, Photodetectors by Ghenadii Korotcenkov (Editor)  published by the Springer in 2023.
  • C. Kumar, S. Jit, S. Saxena, and S. Shukla, “II-VI semiconductor-polymer nanocomposites and its gas sensing Properties”  Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors; Vol. 3: Sensors, Biosensors, and Radiation Detectors" by Ghenadii Korotcenkov (Editor), Published by Springer, 2023

  1. Head, Department of Electronics Engineering, IIT(BHU), Varanasi (April 08, 2015 --- May 08, 2018)

  2. Coordinator/Director, Computer Centre, Banaras Hindu University (February 29, 2012 –March 22, 2014)

  3. Chairperson, Senate Post Graduate Committee (SPGC), IIT(BHU), Varanasi (Academic Sessions 2013-14 & 2014-15)

  4. Member, Board of Governors, UPTTI, Kanpur (January 2016 – Till date)

  5. Member, Board of Governors, HBTI Kanpur (March 2013 – February 2016)

  6. Convener, Department Post Graduate Committee (DPGC), IIT(BHU), Varanasi (2013-14 & 2014-15 Sessions)

  7. Member, Research & Development Committee, IIT(BHU), Varanasi (2013- 2018)

  8. Member, Central Purchase Committee, IIT(BHU), Varanasi (January 2013 – 2016)

  9. Member, University Apex Committee for UET/PET Examinations, BHU, Varanasi (2013)

  10. Member, Centralized Instrumentation Facility, BHU, Varanasi (2013)

  11. Member, High Performance Computing Committee, IIT(BHU), Varanasi (2013)

  12. Chairman, Optical Fiber Cable Based LAN Infrastructure Creation Committee, IIT(BHU), Varanasi (2016-2019)

  13. Member, Telecommunication Services Committee, IIT(BHU), Varanasi (2013)

  14. Expert Member, Board of Studies of ECE Dept., SRM University, Lucknow (2013)

  15. Expert Member, Board of Studies of ECE Dept., SVNIT Surat (2008)

  16. Expert Member, Board of Studies of ECE Dept., NIT Delhi (2015)

  17. Expert Member, Board of Studies of Electronics Dept., DDU Gorakhpur University, Gorakhpur (2010)

  18. Member, Teachers’ Grievance Committee, BHU, Varanasi (2012-2013)

  19. Member, Senate, IIT(BHU), Varanasi

  20. Chairman, Co-Curricular Activities Wing, IT-Gymkhana, IIT(BHU), Varanasi (2010-2011 & 2011-2012)

  21. Vice-President & Treasurer, Electronics Engineering Society, Dept. of Electronics Engg., IIT(BHU), Varanasi (since 2007)

  22. Treasurer, IETE Varanasi Sub-Centre (since 2008)

  23. Warden/Administrative Warden, IIT(BHU) Hostels (July 2001-June 2007; 6 years)

  24. Professor-in-Charge, Examinations, Dept. of Electronics Engg.(2008-2010)

  25. Professor-in-Charge, Training & Placement, Dept. of Electronics (2002-2004)

 

1.      Fellowships/Awards/Honors/ Recognitions:

  • Fellow, West Bengal Academy of Science & Technology (WAST)
  • IETE-Prof. SVC Aiya Memorial Award (2023)
  • BOYSCAST Fellowship (2010-2011), Ministry of Science and Technology, Govt. of India. Worked as the BOSCAST Fellow in the Max-Born-Institute, Division C, Berlin during Sept. 22 to Dec. 25, 2012 under the above mentioned fellowship.
  • Postdoctoral Research Fellowship, Georgia State University, Atlanta, USA, March-August, 2007.
  • INSA-Visiting Fellowship, 2006-2007
  • Fellow, The Institution of Engineering & Technology, UK
  • Fellow, The Institution of Electronics and Telecommunication Engineers (IETE), India
  • Fellow, The Institution of Engineers (India)
  • Senior Member, IEEE, USA
  • Institute of Physics Outstanding Reviewer Award 2019 for Semiconductor Science and Technology​ journal
  • Best Paper Award in the IEEE CONNECT 2020 Conference organized by the IEEE Bangalore Section, India during JULY 2-4, 2020. 
  • Appointed as one of the Juries for the India Innovation Initiative (i3), a national-level competition in innovation and entrepreneurship organized by the Confederation of Indian Industry in partnership with the AICTE and Department of Science and Technology (DST), Government of India in 2015.
  • Worked as a National Jury in the 8th India Innovation Initiative: National Fair & Awards Ceremony 2016 held during 18-19 October, 2016 at the Lalit Hotel, New Delhi jointly organized by the Confederation of Indian Industry (CII), Department of Science & Technology (DST) and All India Council of Technical Education (AICTE) as a part of India Start-up & India Stand-up program announced by our Hon'ble Prime Minister.

2.    Editorial Board Member: 

Editor-In-Chief: Material Science Research India (https://www.materialsciencejournal.org)
Associate Editor: IET Micro & Nano Letters (SCIE and Scopus Indexed with IF: 0.975) (https://digital-library.theiet.org/journals/mnl/editorial-board)
Associate Editor: Journal of Electronic Materials (SCIE and Scopus Indexed with IF: 2.1)
Editor:                  IETE Journal of Research (Scopus Indexed with IF: 2.33)

Editorial Board Memebrs of other journals:  

  • NIEEE (The Nigerian Institution of Electrical and Electronics Engineers) Technical Transactions
  • Journal of Advance Research in Microelectronics and VLSI
  • Journal of Advance Research in Electrical Engineering and Technology
  • Journal of VLSI Design Tools & Technology
  • Journal of Electronic and Electrical Engineering
  • Journal of Nano Science and Quantum Physics (JNSQP)
​3.      Reviewer of International/National Journals:
  1. Nature Communication
  2. Scientific Reports (of Nature Publications)
  3. Lasers and Photonic Review
  4. IEEE Trans. Electron Devices
  5. IEEE Electron Device Letters
  6. IEEE Journal of Quantum Electronics
  7. IEEE Journal of Selected Topics in Quantum Electronics
  8. IEEE Trans. Components and Packaging Technology
  9. IEEE Trans. Nanotechnology
  10. IEEE Trans. Very Large Scale Integration Systems
  11. IEEE Photonics Technology Letters
  12. Journal of Applied Physics
  13. Journal of Applied Physics Letters
  14. Microsystem Technologies
  15. Indian Journal of Physics
  16. Journal of Vacuum Science & Technology
  17. Solid State Electronics                     
  18. Microelectronics Journal
  19. Microelectronics Reliability
  20. ETRI Journal
  21. IET Science, Measurement & Technology
  22. IET Circuits, Devices and Systems
  23. Semiconductor Science and Technology
  24. Journal of Electrical Engineering & Technology
  25. Superlattices and Microstructures Journal (Elsevier)
  26. Materials Science and Engineering B
  27. ACS Applied Materials and Interfaces
  28. Journal of Electronic Materials
  29. Journal of Material Chemistry (RSC)
  30. International Journal of Electronics and Communications
  31. Materials Research Express
  32. Optik
  33. Silicon
  34. IETE Journal of Research
  35. IETE Technical Review

4.      Recognition as Reviewer by the IEEE:
         Included in the Golden List of Reviewers of the IEEE Trans. Electron Devices for the following calendar  years:     
         2004 (Ref.: Vol.51, pp. 1948-1961, Dec. 2004)
         2005(Ref. Vol.52, pp.2516-2532, Dec. 2005),
         2006(Ref.: Vol.53, pp. 2861-2877, Dec. 2006)
         2008(Ref.: Vol.55, pp. 3324-3345, Dec. 2008)
         2009 (Ref.: Vol.56, pp. 2856-2878, Dec. 2009)
         2012 (Ref.: Vol.59, pp. 3148-3177, Dec. 2012)

5.     Worked as Ph.D. Thesis Examiner:

 IIT Kanpur; IIT Delhi; IIT Roorkee; IIT Indore;  IIT (ISM) Dhanbad; IIT Hyderabad, MNIT Allahabad; NIT Agartala; NIT Raurkela; NIT Silchar; VNIT Nagpur, NIT Jamsedpur, IIITDM Jabalpur, Veermata Jijabai Technological Institute Mumbai; University of Calcutta; Jadavpur University; Delhi University; Anna University; Jawaharlal Nehru Technological University Hyderabad; Guru Govind Singh Indraprastha University, Rajiv Gandhi Pradyugiki University Bhopal; SRM University-Chennai; St. Peter’s University, Tamil Nadu; etc.
 

6.   Expert Member of the UGC and AICTE Teams:

  • Visited as an UGC expert member to the V.S.S. University of Technology, Burla, Odisha during September 17-18, 2012
  • Visited as an AICTE expert member to Arya College of Engineering and Information Technology, Jaipur, Rajasthan on 18-Oct-2016.
  • Visited as AICTE expert member to the Memary Govt. Polytechnic College, Bardwan, West Bengal on 10.03.2017.
  • Visited as AICTE expert member to the Salbani Institute of Technology, Salbani, West Midnapore, West Bengal on 11.03.2017.
  • Visited as AICTE expert member to the Bharat Institute of Technology Sonipat (BITS), Haryana on 24.10.2017.
  • Visited as AICTE expert member to the MERI College of Engineering & Technology, Jhajjar, Haryana on 25.10.2017

7.   Visited as an Expert Member of the NBA Team: 

  • National Institute of Technology, Warangal (Oct. 10-12, 2014)
  • BRCM College of Engineering & Technology, Bhiwani, Haryana (April 17-19, 2015)
  • Audisankara College of Engineering & Technology, Nellore, Andhra Pradesh (May 29-31, 2015)
  • Karnatak Law Society’s Gogte Institute of Technology, Udyambag, Karnataka (August 21-23, 2015)
  • Vasireddy Venkatadri Institute of Technology, Nambur (V), Pedakakani (M), Guntur, AP (Oct. 02-04, 2015)
  • Tezpur University, Nappam, Sonitpur, 784 028, Assam (November 6-8, 2015)
  • St. Peter's Engineering College, Maisammaguda, R.R. Dist., Hyderabad-500014, Telengana (January 08-10, 2016)
  • MCKV Institute of Engineering, Liluah, Howrah- 711 204 West Bengal (February 19-21, 2016)
  • B.S. Abdur Rahman University, Chennai, Tamil Nadu (April 15-17, 2016)
  • National Institute of Technology Calicut, Kozhikode, Kerala- 673 601 (August 19-21, 2016)
  • MAEER’s MIT College of Engineering, Pune (September 16-18, 2016)
  • Panimalar Engineering College, Bangalore Trunk Road, Varadharajapuram, Nazarathpet, Poonamallee, Chennai-600123 (October 22-23, 2016) 

Invited Lectures Delivered:  

  1. “Colloidal ZnO and CdSe Quantum Dots Based Photodetectors” delivered on April 27, 2023 at the IEEE  International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology (IEEE 5 NANO 2023) organized by the IEEE Photonics Society, VISAT Engineering College, Ernakulam, Kerala during April 27-28, 2023.
  2. “Organic Thin Film Solar Cells: An Overview with Some Case Studies” delivered on December 18, 2022 in the International Symposium on Semiconductor Material and Devices (ISSMD-2022) organized by KIIT University, Bhubaneswar during December 16-18, 2022.
  3. “Modeling, Simulation and Application of Engineered TFETs,” delivered on December 13, 2022 in the 6th IEEE International Conference on Emerging Electronics (ICEE), Hilton Hotel, Bangalore during December 11-14, 2022
  4. “Fabrication and Characterization of Some Organic-Inorganic Hybrid Perovskite Based Photodetectors” delivered on May 20, 2022 at the “World Engineering Conference on Contemporary Technologies” organized by the Chitkara University, Rajpura, Punjab during May 20-21, 2022
  5. “Point Contact Diodes to Nanoscale MOS Transistors: A Brief Journey” delivered on December 29, 2021 at Online International Symposium on History and Future of Transistors jointly organized by the IEEE EDS Delhi Chapter, The National Academy of Sciences India -Delhi Chapter and Deen Dayal Upadhyaya College (University of Delhi) during December 23, 2021 – December 30, 2021.
  6. “Introduction to Organic Thin Film Solar Cells” delivered on March 28, 2021 in the International Seminar on Electronics and Computing Technology (ISECT -2021) organized by the Department of Electronics, Sambalpur University Institute of Information Technology (SUIIT), Burla , Odisha, INDIA during March 27–April 01, 2021 (Online).
  7. “Colloidal ZnO Quantum Dots Based Spectrum Selective Photodetectors” delivered on December 04, 2020 at the “Webinar on Materials Science” organized by the Endeavor Research Pvt. Limited, USA during December 3-4, 2020.
  8. “ZnO and CdSe Colloidal Quantum Dots Based Photodetectors” delivered on October 21, 2020 at the “Webinar on MATERIAL SCIENCE & NANOTECHNOLOGY” organized by the Innovinc, Santa Clara, USA.  
  9. “Terahertz Technology: An Overview” delivered on September 11, 2020 at the Research Oriented International Webinar Series (ROIWS-2K20) organized by the Government Engineering College, Jagdalpur, Chhattisgarh.
  10. “Terahertz Technology and Its Applications: Exploring Its Possibility for Tbps Wireless Communications,” 4th International Conference on Signal Processing and Communication (ICSC-2018) to be held at JIIT, Noida during March 21-23, 2018. 
  11. “Metal Oxide Nanostructure Materials and Devices for Electronic, Optoelectronic and Gas Sensing Applications,” delivered on November 11, 2017 at the 3rd   International Conference on Nanoelectronics, Circuits & Communication Systems (NCCS-2017) held during November 11-12, 2017 at ARTTC, BSNL, Hazaribag Road, Ranchi.
  12. “Fabrication and Characterization of Colloidal Quantum Dots Based Photodetectors,” delivered on August 11, 2017 at the IEEE international conference on Telecommunication and Networks (TEL-NET 2017) organized by the Amity University, Noida during August 10-11, 2017.
  13. “Fabrication and Characterization of p-Si/n-TiO2 Nanostructure Heterojunction Diodes for Ultraviolet Detections” delivered on December 09, 2016 in the International Conference on Allied Electrical and Communication Systems (ICAECS-2017) organized by the Vignan University, Guntur, A.P. during December 8-10, 2016
  14. “Effects of Seed Layers on the ZnO Nanostructure materials grown on Si Substrates for Electronic and Ultraviolet Detection Application” delivered on December 12, 2015 in the International Conference on Frontiers in Materials Science & Technology (ICFMST 2015) held during December 10-12  at National Institute of Science and Technology, Berhampur, Odisha, India
  15. “Fabrication and Characterization of Some p-Si/n-ZnO Nanostructured Heterojunction Devices for Electronic and Ultraviolet Detection Applications” delivered on October 24, 2015 at the  2nd International Conference on Emerging Technologies: Micro to Nano (ETMN 2015) during 24-25 October, 2015 at Manipal University, Jaipur, India.
  16. “Principles and Applications of Terahertz Technology: An Overview” delivered on September 25, 2015 at the  International Conference on Signal Processing, Computing and Control (2015 ISPCC) during September 24- 26, 2015 at Jaypee University of Information Technology, Waknaghat, Solan, H.P., INDIA
  17. “CMOS Scaling: Issues, Trends and Key Technology Innovations”-delivered at the International Conference on Power, Control and Embedded Systems (ICPCES-2010), Nov.28-Dec.01, 2010, MNNIT, Allahabad.  

At National Level Events:

  1. “Introduction to Nanomaterials for Sensing Applications” delivered on 27th March, 2024 at the Department of Electronics and Communication Engineering, NIT Srinagar.
  2. “History and Development of Transistor Technology: Micro to Nano” delivered on March 07, 2024 at the short-term course Neuroevolution-based Advanced Semiconductor Devices organized by the Department of Electronics and Communication Engineering, BIT Mesra, Ranchi, India during March 07-11, 2024
  3. “Colloidal Quantum Dots Based Photodetectors” delivered on May 04, 2023 at the Department of Electronics and Communication Engineering, Punjab Engineering College, Chandigarh.
  4. “Journey from Micro to Nanoscale Transistors” delivered on March 24, 2023 in the Workshop on Brain-inspired/Neuromorphic Computing for Responsible AI organized by the Department of Electrical Engineering, IIT Patna during  March 20-26, 2023. 
  5. “Metal Oxide Nanostructures for Sensing Applications” delivered on September 03, 2022 at the faculty development program on “VLSI Design & Nanoelectronics: Emerging Challenges & Opportunities” organized by the IIIT Jabalpur during September 01-08, 2022
  6. “Organic Thin Film Solar Cells: Some Case Studies,” delivered on July 27, 2022 at the “Workshop on High-End Equipments: Fabrication and Characterization of Electronic Devices” organized by the Department of Electrical Engineering, IIT Patna during July 21-27, 2022
  7. “Sensors for the Internet of Things: Introduction to Nanosensor Technology” delivered on March 11, 2022 at the Short-Term Course on “IoT with AI and Data Science” organized by IIT Patna during March 11-16, 2022.
  8. “Metal Oxide Nanostructures for Sensing Applications” delivered on February 18, 2022 at the Faculty Development Program on “Nanoscaled Devices and Internet of Things for Engineering Applications,” organized by the NIT Warangal during February 15-25, 2022
  9. “Point Contact Diodes to Nanoscale Transistors: An Overview” delivered on February 17, 2022 at the Faculty Development Program on “Nanoscaled Devices and Internet of Things for Engineering Applications,” organized by the NIT Warangal during February 15-25, 2022.
  10. “Point Contact Diodes to Nanoscale MOS Transistors: An Overview” delivered on January 28, 2022 at the AICTE ATAL Faculty Development Program on “Recent Trends of Emerging Research Advances in Design Aspects and Innovative Modeling Techniques with Miniaturization for Electronics Devices and Circuits” organized by the IERT Prayagraj during January 24-28, 2022.
  11. “Terahertz Technology: An Overview” delivered on January 28, 2022 at the short-term Course on “Nano-electronics: Materials, Devices and Circuits” organized by NITTTR, Chandigarh during January 24-28, 2022.
  12. “Organic Thin Film Solar Cell Technology: An Overview” delivered on January 28, 2022 at the short-term Course on “Nano-electronics: Materials, Devices and Circuits” organized by NITTTR, Chandigarh during January 24-28, 2022.
  13. “Basic Concepts and Modeling of JFET, MESFET and MOSFET” delivered on December 13, 2021 at the AICTE ATAL Faculty Development Program on “Recent Advances and Challenges in Nanoelectronics Devices” organized by the Department of Electronics and Communication Engineering, Indian Institute of Information Technology (IIIT) Bhagalpur during 13-17 December 2021.
  14. “Basic Concepts and Modeling of JFET, MESFET and MOSFET,” delivered on December 13, 2021 at the ATAL sponsored FDP on Recent Advances and Challenges in Nanoelectronic Devices organized by the IIIT Bhagalpur, Bihar during December 13-17, 2021.
  15. National Engineering College, Kovilpatti; IEEE Student Chapter and IEEE EDS Coimbatore Chapter jointly invited for delivering a lecture titled “Nanostructured Materials and Devices for Sensing Applications,” on December 09, 2021.
  16. “Nanostructured Metal Oxides for Sensing Applications” delivered (through digital platform) on April 10, 2021 at the symposium on "Recent Technological Advancement in Wide/Ultra-wide Bandgap Semiconductor Materials, Devices and Applications: A Step Towards Aatm Nirbhar Bharat" organized by the Department of Electrical and Electronics Engineering, BITS Pilani, Pilani.
  17. “Metal Oxide Nanostructures ETL Based Organic Thin Film Solar Cells,” delivered (through digital platform) on February 24, 2021 in the workshop on "Next-Generation Nano-electronics Devices, Circuits and its Applications using EDA Tools" organized by the Department of Electronics and Communication Engineering, IIIT Bhagalpur.
  18. “Nanostructured Metal Oxides for Sensing Applications” delivered (through digital platform) on February 06, 2021 at the Faculty Development Program on Advanced Materials for New Generation Nanoelectronic Devices (AMND 2021)” organized by the School of Electronics Vellore Institute of Technology, Chennai.
  19. “Organic Thin Film Solar Cells” delivered (through digital platform) on January 07, 2021 in the AICTE-QIP Short Term Course on "Nanoelectronics devices and circuits” organized by the Department of Electronics Engineering, IIT(BHU) Varanasi.
  20. “Organic Thin Film Solar Cell Technology” delivered (through digital platform) on December 01, 2020 at 7th Foundation Anniversary Celebration of the Madan Mohan Malviya University of Technology (MMMTU), Gorakhpur organized by the Department of Electronics and Communication Engineering of the MMMTU.
  21. “PCDTBT:PCBM and CH3NH3PbI3 Perovskite Based Organic Solar Cells,” delivered (through digital platform) on November 26, 2020 at the Faculty Development Program organized by the Thakur College of Engineering and Technology, Mumbai.  
  22. “Metal Oxide Nanostructures: Properties and Applications” delivered online on September 06, 2020 at the National Conference on Electronics, Communication and Computation-NCECC-2020 organized by the NIT Jamsedpur. 
  23. “Introduction to Metal Oxide Nanostructures for Sensing Applications” delivered on August 18, 2020 in the Faculty Development Program on Recent Research Trends in Electronics and Communication Engineering organized by the G B Pant Institute of Engineering and Technology, Pauri-Garhwal, Uttarakhand.
  24. “ZnO Nanostructures Based Photodetectors using Low Cost Techniques,” delivered in the Webinar organized by the  IEEE Photonics Society Student Chapter, Mangalam College of Engineering, Kottayam, Kerala, India on July 01, 2020
  25. “Introduction to Metal Oxide Nano Structures for Sensing Applications,” Webinar organized by Centre for Nanoscience and Nanotechnology, Sathyam Institute of Science and Technology on June 15, 2020
  26. “Introduction to Terahertz Technology” Webinar organized by the Amity University, Lucknow on May 01, 2020
  27. “Advances in Nanoscale MOS transistors: Bulk to Nonclassical MOS Technology” delivered on February 17, 2020 in the short-term course on Emerging Nano Regime Devices and their Applications organized by Department of Electronics and Communication Engineering, NIT Mijoram during February 17-21, 2020.  
  28. “Growth and Characterization of ZnO Thin Films on Si Substrates for Electronic, Optoelectronic and Gas Sensing Applications,” delivered on June 20, 2019 in the AICTE QIP Sponsored Short-Term Course on Materials Characterization for Engineers organized by the School of Material Science and Technology, IIT (BHU) during June 17-21, 2019.
  29. “Nanoscale CMOS Technology: Issues and Challenges” delivered on April 27, 2019 at the “DST-SERB & TEQIP-III Sponsored National Workshop on Modeling of Novel Nanoelectronic Devices and Circuits for ULSI Technology held during April 26-30, 2019 at NIT Silchar.
  30. “Metal Oxide Nanostructures for Optoelectronic Applications,” delivered on April 04, 2019 in the TEQIP sponsored workshop on Advance Embedded system and Microelectronics held in the department of Electronics & Communication Engineering, MNNIT Allahabad during April 1-5, 2019.
  31. “Metal Oxide Nanostructures: Materials, Devices and Applications,” delivered on February 16, 2019 in the Workshop on Recent Trends in Nanotechnology: Devices and Materials Perspective organized by the Jaypee Institute of Information Technology, Noida during February 15-16, 2019.
  32. “Fabrication and Characterization of Metal Oxide Nanostructures for Sensing Applications” delivered on Dec. 27, 2018 in the AICTE QIP Sponsored Short-Term Course on Material Characterization for Engineers organized by the School of Material Science and Technology, IIT (BHU) during Dec. 24-29, 2018.
  33. “Metal Oxide Nanostructures for Gas and Optical Sensing Applications” delivered on October 25, 2018 in AICTE QIP Sponsored Short-Term Course on Smart Sensors and Systems (SSS - 2018) organized by the Department of Electronics Engg., IIT (BHU) during Oct.22-27, 2018
  34. “Advances in MOSFET Transistors: Issues and Challenges” delivered on July 03, 2018 at the Faculty Development Program on Microsystems & Advanced Semiconductor Devices organized by Department of Electronics & Communication Engineering, S.R.M.S. College of Engineering & Technology  Bareilly during July 03-07, 2018
  35. “Non-Classical CMOS Technology: An Overview” delivered at the Short-Term Course on Modeling and Simulation of Advanced Semiconductor Devices and VLSI Circuits organized by the Department of Electronics and Communication Engineering, G.B. Pant Institute of Engineering & Technology, Uttarakhand during June 25-29, 2018.
  36. “Issues and Challenges of CMOS Scaling for Next Generation IC Technology” delivered on June 23, 2018 at Short-Term Course on Fabrication of Microelectronic Devices for VLSI Circuits and MEMS Based Sensors organized by the Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata during June 21-23, 2018.
  37. “Terahertz Technology: An Overview” delivered on November 10, 2017 at  Department of Electronics and Communication Engineering, NIT Jamshedpur.
  38. “Electrical and Optical Properties of ZnO Nanostructure Based Schottky and Heterojunction Diodes Fabricated on Si Substrates,” delivered on July 24, 2017 at the Dept. of Electronics Engineering, IIT(ISM) Dhanbad. 
  39. “ZnO and TiO2 Nanostructure Based Schottky and Heterojunction Diodes for Ultraviolet Detections” delivered on March 08, 2017 at the Department of Department of Instrument Technology, College of Engineering, Andhra University, Visakhapatnam.
  40. “Basic Concepts and Modeling of JFET, MESFET and MOSFET” delivered on November 30, 2016 in the UGC-Sponsored Refresher Course on “VLSI Design and Nanotechnology: Issues and Challenges” organized by the Jadavpur University, Kolkata during November 28-December 17, 2016
  41. “Electrical and Optical Properties of Metal Oxide Nanostructures Based Schottky and Heterojunction Diodes” delivered on July 29, 2016 in the workshop "Emerging areas of Electronics and Communication Engineering" organized by the Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata.
  42. “Advanced MOS Transistors for Future Generation Integrated Circuits: An Overview” delivered on July 11, 2016 in the Faculty Development Program on Integrated Circuits: Design and Applications organized by the United Institute of Technology, Allahabad during July 11-15, 2016.
  43. “Fundamentals of Field Effect Transistors: Basic Concepts and Modeling” delivered on July 11, 2016 in the Faculty Development Program on Integrated Circuits: Design and Applications organized by the United Institute  of Technology, Allahabad during July 11-15, 2016.
  44. “Advances in CMOS Devices: An Overview” delivered on November 12, 2015 at the Mepco Schlenk Engineering College, Sivakasi, Tamilnadu  - 626 005
  45. “Electrical and Ultraviolet Detection Properties of Some n-ZnO/p-Si  Nanostructure Heterojunctions” delivered on November 03, 2015 at the  Advanced Nanomaterials: Characterizations and Applications (WANCA-2015) held during November 02-08, 2015 at the Department of Physics, Banaras Hindu University, Varanasi, India.
  46.  “Terahertz Technology: Principles and Applications” delivered on October 14, 2015 at the Dept. of Electronics and Communication Engineering, Kashi Institute of Technology, Varanasi
  47. “Referencing in Research Articles using EndNote Software” delivered on September 17, 2015 in the “Capacity Building Programme for Faculty Member in Social Sciences” held during September 6-19, 2015 at Faculty of Commerce, BHU
  48. “Art of Referencing in Research Articles” delivered on June 23, 2015 in the Workshop on Research Methodology for Ph.D. Students in Social Sciences held during June 15-24, 2015 at Faculty of Management Studies, BHU
  49. “Introduction to Terahertz Technology,” delivered at the Advanced VLSI, Signal processing and Communication network (AVSC-2014) during May 19-24, 2014, Motilal Nehru National Institute of Technology (MNNIT), Allahabad on May 23, 2014
  50. “CMOS Scaling: Issues and Challenges for VLSI/ULSI Applications,” delivered at the Advanced VLSI, Signal processing and Communication network (AVSC-2014) during May 19-24, 2014, Motilal Nehru National Institute of Technology (MNNIT), Allahabad on May 22, 2014
  51. “Terahertz Technology: Principles & Applications” delivered at the Industrial Symposium, Visvesvaraya National Institute of Technology (VNIT), Nagpur on April 05, 2014
  52. “Fundamentals of Information and Coding Theory,” delivered at the Workshop on Communication System Design (WCSD-2014), Sambhunath Institute of Engineering and Technology, Allahabad on April 03, 2014  
  53. “Fundamentals of CMOS Scaling: A Journey from Diode to Non-Classical CMOS Technology” delivered at the Dept. of Electronics & Communication Engineering, Jadavpur University, Kolkata  on December 21, 2013
  54. “E-Governance” delivered at the Management Development Program on Financial Management, Faculty of Commerce, BHU on January 16, 2014  
  55. “Fundamentals of CMOS Scaling: A Journey from Diode to Non-Classical CMOS Technology” delivered at the Dept. of Electronics & Communication Engineering, Jadavpur University, Kolkata  on December 21, 2013
  56. “Importance of Referencing in Research Reports: Introduction to the EndNote Software” delivered on Sept. 15, 2013 in the ICSSR Sponsored 10 days Research Methodology Programme for Ph.D Students in Social Sciences organized by the Faculty of Commerce during  September 6-15, 2013
  57. “Non-Classical CMOS Technology: An Overview” delivered at the  “Student’s Conference on Engineering and Systems (SCES 2013),” April 12-14, 2013, MNNIT, Allahabad
  58. “A Journey from BJT to Multi-Gate CMOS Technology” delivered on January 11, 2013 at the Dept. of Electronics & Communication Engineering, NIT Agartala, Tripura
  59. “Advances in MOSFET Technology: An Overview” -delivered at the  “Student’s Conference on Engineering and Systems (SCES 2012),” March 16-18, 2012, MNNIT, Allahabad. 
  60. “Modeling and Simulation of Some Advanced Non-Classical CMOS Devices” delivered at the nanoMASTD-12, July 07, 2012, Institute of Radio Physics & Electronics, Kolkata.    
  61. “Terahertz Technology: An Overview”- delivered at the Workshop on Nanotechnology in Semiconductor Industry, April 5-6, 2008, Department of ECE, M.M.M. Engineering College, Gorakhpur.
  62. “Issues and Challenges of Nanoscale MOSFETs”- delivered at the Workshop on Nanotechnology in Semiconductor Industry, April 5-6, 2008, Department of ECE, M.M.M. Engineering College, Gorakhpur.
  63.  “Global Positioning Systems: An Overview” delivered at the Winter School on Information and Communication Technologies Mediated Agricultural Extension: Basics to Advances, December 15,2010 - January 05, 2011, Department of Extension Education, Institute of Agricultural Sciences, BHU, Varanasi.  
  64. “Introduction to the Satellite Television Systems” delivered at the Winter School on Information and Communication Technologies Mediated Agricultural Extension: Basics to Advances, December 15, 2010 - January 05, 2011, Department of Extension Education, Institute of Agricultural Sciences, BHU, Varanasi.

A.      Collaborative  Research Group:

  • Prof. Rajiv Prakash, School of Materials Science and Technology, IIT(BHU)
  • Prof. Anup Ghosh, Department of Physics, BHU
  • Dr. Anchal Srivastava,  Department of Physics, BHU
  • Dr. Bhola Nath Pal, School of Materials Science and Technology, IIT(BHU)
  • Dr. Santanu Das, Department of Ceramic Engineering, IIT(BHU)
  • Dr. Bratindranath Mukherjee, Department of Metallurgical Engineering, IIT(BHU)
  • Shweta Tripathi, MNNIT Allahabad
  • Seyed Amir Hashemi, Faculty of Engineering, Shahrekord University, Shahrekord 88186, Iran 

B.     

Patents Awarded:    

  1. S. Das, S. Jit, C. Kumar and R. Kumar: A Two Dimensional Photosensitive Metal Oxide Semiconductor (MOS) Capacitor; Application No.: 202011017140; Date of Filing: April 21, 2020; Status: Granted on 07.03.2024; Patent No.: 521723
  2. K. Uvanesh, N. Sharma, S. K. Mahto, S. Jit, C. Kumar and S. Poddar: Extended Large Area Heterojunction Based Bio-Sensing Device; Application No.: 202011014307; Date of Filing: March 31, 2020; Status: Granted on 12.03.2024; Patent No.: 523737

Patents under Examination:

  1. H. Kumar and S. Jit: A Colloidal Quantum Dots (QDs) based Ion Sensitive Field Effect Transistor; Application No.: 201911049752; Date of Filing: December 03, 2019; Status: Applied
  2. A. K. Singh, Nivedita, S. Kumar, D. K. Sinha and S. Jit: Charge Plasma Based Back Gated Ferroelectric Si/Ge Heterojunction STFET; Application No.: 202311014764, Date of Filing: March 06, 2023; Status: Applied