Assistant Professor (December 2022- Present), Department of Electronics Engineering, IIT (BHU) Varanasi, India.

R&D Consultant (July 2022- Nov 2022), Finwave Semiconductor, MA, USA.

Project Research Scientist (July 2022- Nov 2022), IIT Bombay, India.

Institute Postdoctoral Fellow (July 2021- June 2022), IIT Bombay, India.

Patents:

1. Dipankar Saha, Swaroop Ganguly, Jaya Jha, "GaN based Field Effect Transistor and a Complementary Device thereof", Patent No.: 409302.

Journals:

1. Jaya Jha, Sreenadh Surapaneni, Swaroop Ganguly and Dipankar Saha, "A mixer architecture using GaN-based split-gate nanowire transistor", Nanotechnology 35, 415202 (2024). DOI: https://doi.org/10.1088/1361-6528/ad63b0.

2. Jaya Jha, Sreenadh Surapaneni, Akhil Kumar S., Swaroop Ganguly and Dipankar Saha, “Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology”, Solid State Electronics 186, 108138 (2021). DOI: https://doi.org/10.1016/j.sse.2021.108138.

3. Jaya Jha, Swaroop Ganguly and Dipankar Saha, “GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors”, Nanotechnology 32, 315206 (2021). DOI: https://doi.org/10.1088/1361-6528/abfb99.

4. Bazila Parvez, Jaya Jha, Pankaj Upadhyay, Navneet Bhardwaj, Yogendra Yadav, Bhanu Upadhyay, Swaroop Ganguly, and Dipankar Saha, “Improvements from SiC Substrate thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions”, IEEE Electron Device Letters, vol. 42, no. 5, pp. 684-687(2021). DOI: http://dx.doi.org/10.1109/LED.2021.3068863.

5. Sreenadh Surapaneni, Jaya Jha, Vikas Pendem, Yogendra Kumar Yadav, Swaroop Ganguly and Dipankar Saha, “Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement”, Nanotechnology 32, 455202(2021). DOI: https://doi.org/10.1088/1361-6528/ac1a3f.

6. Jaya Jha, Mudassar Meer, Swaroop Ganguly, and Dipankar Saha, “Off-State Degradation and Recovery in Oxide/AlGaN/GaN Heterointerfaces: Importance of Band Offset, Electron, and Hole Trapping”, ACS Applied Electronic Materials 2 (7), 2071-2077 (2020). DOI: https://doi.org/10.1021/acsaelm.0c00322.

7. Yogendra K. Yadav, Bhanu B. Upadhyay, Jaya Jha, Swaroop Ganguly and Dipankar Saha, “Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices, vol. 67, no. 10, pp. 4141-4146(2020). DOI: http://dx.doi.org/10.1109/TED.2020.3019359.

8. Jaya Jha, Bhanu B. Upadhyay, Kuldeep Takhar, Navneet Bhardwaj, Swaroop Ganguly, and Dipankar Saha, “Evolution of Field Dependent Carrier Trapping during Off-state Degradation for GaN Based Metal Oxide Semiconductor High Electron Mobility Transistors”, Journal of Applied Physics 124, 165704 (2018). DOI: https://doi.org/10.1063/1.5044590.

9. Bhanu B. Upadhyay, Jaya Jha, Kuldeep Takhar, Swaroop Ganguly, and Dipankar Saha, “Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures”, Journal of Applied Physics 123, 205702(2018). DOI: https://doi.org/10.1063/1.5026167.

10. Bhanu B. Upadhyay, Kuldeep Takhar, Jaya Jha, Swaroop Ganguly and Dipankar Saha, “Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs”, Solid-State Electronics, vol. 141, 1-6 (2018). DOI: http://dx.doi.org/10.1016/j.sse.2017.11.001.

Conferences:

1. Prabhanshu Chandra, Ritij Saini, Jaya Jha, Yogendra Yadav, Sudipta Mukherjee, R. Gandhi, Ranjay Laha, Nageswararao Pedapati, Dasari Balasekhar, Arijit Das, Dipankar Saha and Swaroop Ganguly, "Rapid LUT Modelling Technique for GaN HEMT Based MMIC Technology," 2021 IEEE MTT-S International Microwave and RF Conference (IMARC), 2021, pp. 1-4, doi: https://doi.org/10.1109/IMaRC49196.2021.9714638.
2. Jaya Jha, Yogendra Yadav, Bhanu Upadhyay, Sreenadh Surapaneni, Navneet Bhardwaj, Swaroop Ganguly and Dipankar Saha, “High Power Broad C-band Amplifier Using AlGaN/GaN Based High Electron Mobility Transistors,” 2021 8th International Conference on Electrical and Electronics Engineering (ICEEE), 2021. DOI: http://dx.doi.org/10.1109/ICEEE52452.2021.9415912.
3. Jaya Jha, Sreenadh Surapaneni, Akhil Kumar S., Swaroop Ganguly and Dipankar Saha, “Multi-finger high power Gallium Nitride based high electron mobility transistors”, IEEE International Conference on Electrical and Electronics Engineering (ICEEE), Istanbul, Turkey, April 16-17, 2019. DOI: https://doi.org/10.1109/ICEEE2019.2019.00046.
4. Sumit Emekar, Jaya Jha, Sudipta Mukherjee, Mudassar Meer, Kuldeep Takhar, Dipankar Saha and Swaroop Ganguly, “Modified Angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates”, SISPAD kamakura, Japan, 2017. DOI: https://doi.org/10.23919/SISPAD.2017.8085278.

Session 2024-2025 (Odd Semester)

EC 201: Solid State Electronic Devices

EC 531: Solid State Devices

Session 2023-2024 (Even Semester)

EO 102: Fundamentals of Electronics and Instrumentation Engineering

EC 571: Hetero-junction Devices and Technology

Session 2023-2024 (Odd Semester)

EO 102: Fundamentals of Electronics and Instrumentation Engineering

EC 531: Solid State Devices

Session 2022-2023 (Even Semester)

EO 102: Fundamentals of Electronics and Instrumentation Engineering

EO 272: Analog Circuits and Systems Lab

EC 433: Advanced Field Effect Devices

Looking for passionate researchers interested in working in the area of Microelectronics, Semiconductor device physics and reliability, Wide bandgap semiconductors, MMICs and related domains. Prospective students should apply for PhD position at IIT BHU.