bnpal.mst's picture
Dr. Bhola Nath Pal
Assistant Professor
School of Materials Science and Technology,IIT BHU
bnpal.mst@iitbhu.ac.in
8174917900
Area of Interest: 
Solution processed thin film and devices, Colloidal quantum dot based optoelectronics devices, Transparent electronics, Low power consuming electronics

Dr. Bhola Nath Pal is an assistant professor of School of Material Science and Technology, IIT(BHU). He did his M. Sc. from University of Calcutta (2000) and PhD from Indian Association for the Cultivation of Science (2005). He was post doctoral fellow at Johns Hopkins University, USA (2006-2009), Los Alamos National Laboratory, USA (2009-2013) and at University of Queensland, Australia (2013-2014) before he joined in SMST in 2014. He has published more than 40 papers in peer reviewed international journals and having 3 US patents.

  1. Colloidal nanocrystal quantum dots and sol-gel metal oxide for optoelectronics devices.
  2. Low-voltage field-effect light emitting transistors for display application.
  3. Quantum dot and 0D/2D heterojunction based ultrafast photodetector for communication application
  4. Quantum dot based narrow band photodetector for imaging application.
  5. Nanocrystal based photoelectrochemical water splitting

         Ongoing Projects
 

S.No. Title Cost in Lakh Project start date Duration Role as PI/CoPI Agency
  1.  
Development of low-voltage, low-power, colloidal quantum dot light-emitting transistors for next generation display technology 55.52 09/09/16 36 months PI  SERB
2
Fabrication of low power-high brightness alternating current polymer electroluminescence device 15.00 4/01/2016 24 months PI IIT(BHU)
3
Seamless Synthesis of large-area 2D transition metal di-chalcogenide semiconductors and their applications in next-generation high-performance optoelectronic devices
 
49.9 21/11/17 36 months Co-PI SERB
 

Selected Publications:

  1. A. Sharma, N. K. Chourasia, N. Pal, S. Biring and B. N. Pal, Role of electron donation of TiO2 gate interface for developing solution processed high-performance one-volt metal oxide thin film transistor using ion-conducting gate dielectric, J. Phys. Chem. C, 2019 (Accepted) 
  2. P. Maity, S. V. Singh, S. Biring, B. N. Pal, A. K Ghosh, Selective near infrared (NIR) sensitive photodetector fabricated with colloidal CdS: Co quantum dots, J. Mater. Chem. C, 2019, 7, 7725-7733
  3. N K Chourasia, A Sharma, V Acharya, N Pal, S Biring, B. N Pal, Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor, J Alloys Compd. 2019, 777, 1124-1132
  4. A. Paliwal, S. V. Singh, A. Sharma, S. Liu, S. Biring and B. N. Pal, Microwave-Polyol Synthesis of Sub-10 nm PbS Nano-crystals for Metal Oxide/Nanocrystal Heterojunction Photodetectors, ACS Appl. Nano Mater., 2018, 1, 11, 6063-6072
  5. G. S.Kenath, R.Mahadevu, A. Sharma, V. K. Gangwar, S. Chatterjee, A. Pandey, and B. N. Pal, 2018. Shell Thickness Dependent Tunable Threshold Voltage Single Quantum Dot Rectification Diode. J. Phys. Chem. C,2018.122(5), pp3176-3181.
  6. A. Sharma, N. K. Chourasia, A. Sugathan, Y. Kumar, S. Jit, S. W. Liu, A. Pandey, S. Biring, and B. N. Pal, 2018. Solution processed Li 5 AlO 4 dielectric for low voltage transistor fabrication and its application in metal oxide/quantum dot heterojunction phototransistors. J. Mater. Chem. C., 2018,6,pp790-798.
  7. G. S. Kenath, P. Maity, Y. Kumar, H. Kumar, V. K. Gangwar, S. Chaterjee, S. Jit, A. K. Ghosh, and B. N. Pal, Single quantum dot rectifying diode with tunable threshold voltage J. Mater. Chem. C, 5 (37), pp.9792-9798.
  8. Il Ku Kim, B. N. Pal, Mujeeb Ullah, Paul L. Burn, Shih-Chun Lo, Paul Meredith and Ebinazar B. Namdas, High-Performance, Solution-Processed Non-polymeric Organic Photodiodes (2014), Adv. Optical Mater. 2015, 3, 50–56 (Cover page article).
  9.   K. Muhieddine, M.Ullah, B. N. Pal, P. Burn, and E. B. Namdas, All Solution-Processed, Hybrid Light Emitting Field Effect Transistors, Adv. Mater. 2014, 26, 6410–6415 (Cover page article).
  10.  W. Koh, A. Y. Koposov, J. T. Stewart, B N. Pal, I. Robel, J. M. Pietryga & Victor I. Klimov, Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene, Scientific Report, 3:2004, 2013 (a Nature group journal)DOI: 10.1038/srep02004,
  11.  B. N. Pal, Y. Ghosh, S. Brovelli, R. Laocharoensuk, Victor. I. Klimov, J. Hollingsworth, H. Htoon, “Giant' CdSe/CdS core/shell nanocrystal quantum dots as efficient electroluminescent materials: Strong influence of shell thickness on light-emitting diode performance”, Nano Lett., 12 (1), pp 331–336, 2012
  12.  B. N. Pal, I. Robel, A. Mohite, R. Laocharoensuk D. Werder, and V. I. Klimov “High-Sensitivity p-n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots”, Adv. Funct. Mater., 22, 1741-1748, 2012
  13.  B. N. Pal, B. M. Dhar, K. See, and H. E. Katz, “Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors”, Nature Materials,  8, 898-903, 2009, News and View: “OXIDE DIELECTRICS A change of direction” H Klauk, Nature Materials, 8, 853-854, 2009.
  14. B. N. Pal, J. Sun, B. J. Jung, and H. E. Katz, “Pentacene-Zinc Oxide Vertical Diode with Compatible Grains and 15-MHz Rectification”, Adv. Mater., 20, 1023, 2008.
  15.  B. N. Pal, P. Trottman, J. Sun, H.E. Katz, “Solution-deposited Zinc oxide and Zinc oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar and Nonvolatile Devices”, Adv. Funct. Mater., 18, 1832, 2008.

Complete List of Publications:

  1. Anand Sharma, Nitesh K. Chourasia, Nila Pal, Sajal Biring and Bhola N. Pal*, Role of electron donation of TiO2 gate interface for developing solution processed high-performance one-volt metal oxide thin film transistor using ion-conducting gate dielectric, J. Phys. Chem. C, 2019 (Accepted) DOI: 10.1021/acs.jpcc.9b04045
  2. Anand Sharma, Nitesh K. Chourasia, Vishwas Acharya, Nila Pal, Sajal Biring, Shun-Wei Liu and Bhola N. Pal* Ultra-low voltage metal oxide thin film transistor by low-temperature annealed solution processed LiAlO2 gate dielectric, Electron. Mater. Letter. 2019 (Accepted)
  3. Sajal Biring, Yun-Ming Sung, Thanh Phuc Nguyen, Ya-Ze Li, Chih-Chien Lee, Alvin HsienYi Chan, Bhola N. Pal, Somaditya Sen, Shun-Wei Liu, Ken-Tsung Wong, Reconciling the value of Schottky barriers in small molecular organic photovoltaics from J-V and C-V measurements at low temperatures towards the estimation of open circuit voltage at 0 K, Organic Electronics 73 (2019) 166–171
  4. Piyali Maity, Satya Veer Singh, Sajal Biring, Bhola N. Pal*, Anup K Ghosh*, Selective near infrared (NIR) sensitive photodetector fabricated with colloidal CdS: Co quantum dots, J. Mater. Chem. C, 2019, 7, 7725-7733
  5. Hemant Kumar, Yogesh Kumar, Bratindranath Mukherjee, Gopal Rawat, Chandan Kumar, Bhola N. Pal and Satyabrata Jit, Effects of Optical Resonance on the Performance of Metal (Pd, Au)/CdSe Quantum Dots (QDs)/ ZnO QDs Optical Cavity Based Spectrum Selective Photodiodes, IEEE T Nanotechnol, 2019 (Accepted) DOI: 10.1109/TNANO.2019.2907529
  6. N K Chourasia, A Sharma, V Acharya, N Pal, S Biring, Bhola N Pal*, Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor, J Alloys Compd. 2019, 777, 1124-1132
  7. Abhyuday Paliwal, Satyaveer Singh, Anand Sharma, Shun-Wei Liu, Sajal Biring and Bhola N. Pal*, Microwave-Polyol Synthesis of Sub-10 nm PbS Nano-crystals for Metal Oxide/Nanocrystal Heterojunction Photodetectors, ACS Appl. Nano Mater., 2018, 1, 11, 6063-6072
  8. Shell thickness dependent tunable threshold voltage single quantum dot rectification diode, Gopal SankarKenath, RekhaMahadevu, Anand Sharma, Vinod K. Gangwar, SandipChaterjee, Anshu Pandey, and Bhola N. Pal J. Phys. Chem. C, 2018, 122 (5), pp 3176–3181
  9. Solution processed Li5AlO4 dielectric for low voltage transistor and its application for low power consumption quantum dot phototransistor, Anand Sharma, Nitesh k.Chourasia, Yogesh Kumar, SatyabrataJit, Shun-Wei Liu, SajalBiring and Bhola N. Pal J. Mater. Chem. C, 2018, 6, 790-798
  10. Electrical and optical characteristics of solution-processed MoOx and ZnO QDs heterojunction, Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola N. Pal and SatyabrataJit, MRS Communications, 2017, 1-6
  11. Single Quantum Dot Rectifying Diode With Tunable Threshold Voltage, Gopal Sankar, PiyaliMaity, Yogesh Kumar, Hemant Kumar,Vinod K Gangwar, SandipChaterjee, SatyabrataJit,Anup K Ghosh and Bhola N. Pal, J. Mater. Chem. C, 2017, 5, 9792-9798
  12. Electrical and Optical Characteristics of Self-Powered Colloidal CdSe Quantum Dot-Based Photodiode H Kumar, Y Kumar, B Mukherjee, G Rawat, C Kumar, BN Pal, S Jit,IEEE J. Quantum Electron.2017, 53 (3), 1-8.
  13.  Visible-blind Au/ZnO quantum dots-based highly sensitive and spectrum selective Schottky photodiode Y Kumar, H Kumar, B Mukherjee, G Rawat, C Kumar, BN Pal, S Jit,IEEE Trans. Electron Devices, 2017, 64 (7), 2874-2880
  14. Colloidal ZnO quantum dots based spectrum selective ultraviolet photodetectors Y Kumar, H Kumar, G Rawat, C Kumar, A Sharma, BN Pal, S JitIEEE Photon. Technol. Lett.2017,29 (4), 361-364
  15. Heating Effects of Colloidal ZnO Quantum Dots (QDs) on ZnO QD/CdSe QD/MoOx Photodetectors H Kumar, Y Kumar, G Rawat, C Kumar, B Mukherjee, BN Pal, S JitIEEE Trans. Nanotechnol.2017,16 (6), 1073-1080
  16.  Colloidal CdSe Quantum Dots and PQT-12-Based Low-Temperature Self-Powered Hybrid Photodetector H Kumar, Y Kumar, G Rawat, C Kumar, B Mukherjee, BN Pal, S JitIEEE Photon. Technol. Lett. 29 (20), 1715-1718
  17. Kink effect in TiO2 embedded ZnO quantum dot-based thin film transistors H Kumar, Y Kumar, K Singh, S Kumar, G Rawat, C Kumar, BN Pal, S JitElectronics Letters2017,53 (4), 262-264
  18. Correlation between structural, optical and magnetic properties of Mn-doped ZnO P Kumar, BK Singh, BN Pal, PC Pandey Appl. Phys. A2016,8 (122), 1-12
  19.  IK Kim, BN Pal, M Ullah, PL Burn, SC Lo, P Meredith, EB Namdas, High‐Performance, SolutionProcessed Non‐polymeric Organic Photodiodes, Advanced Optical Materials 3 (1), 50-56
  20. . K. Muhieddine, M.Ullah, B. N. Pal, P. Burn, and E. B. Namdas, All Solution-Processed, Hybrid Light Emitting Field Effect Transistors Adv. Mater.2014, 26, 6410–6415IF 19
  21.  Dani M Lyons, Ardalan Armin, Martin Stolterfoht, Ravi Chandra R. Nagiri,Ross D Jansen-van Vuuren, Bhola N Pal, Paul L Burn, Shih-Chun Lo, Paul Meredith, Narrow band green organic photodiodes for imaging, Organic electronics2014, 15, 2903–2911
  22.  W. Koh, A. Y. Koposov, J. T. Stewart, B N. Pal, I. Robel, J. M. Pietryga& Victor I. Klimov, Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene, Scientific Report  3 : 2004 (2013), DOI: 10.1038/srep02004,
  23.  DipankarChakravorty, Bhola Nath Pal, Shilpi Banerjee , Amrita Mandal, SreemantaMitra, DhritiRanjanSaha, Sensing Behaviour of Some Nanocomposite Systems,Soft Nanoscience Letters, 2013, 3, 12-15
  24. B. N. Pal, I. Robel, A. Mohite, R. Laocharoensuk D. Werder, and V. I. Klimov “High-Sensitivity p-n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots”, Adv. Funct. Mater.,22, 1741-1748, 2012 IF 11.4
  25. .B. N. Pal, Y. Ghosh, S. Brovelli, R. Laocharoensuk, Victor. I. Klimov, J. Hollingsworth, H. Htoon, “Giant' CdSe/CdS core/shell nanocrystal quantum dots as efficient electroluminescent materials: Strong influence of shell thickness on light-emitting diode performance”, Nano Lett., 12 (1), pp 331–336, 2012.IF 12.7
  26. S. Brovelli1, F.Santamaría1, R. Viswanatha1, B. N. Pal, S. A. Crooker, V.I. Klimov. Wavefunction engineering in core-shell semiconductor nanocrystals: from fine tunedexciton dynamics and suppressed Augerrecombination to dual-color
  27. J. Sun, B. N. Pal, B. J. Jung, and H. E. Katz, Solution process vertical p-n junction diode for high current density and high speed rectification, organic electronics, 10, 1-7,2009.
  28.  A. Bose, B.N.Pal, A. Datta and D.ChakravortySynthesis of two-dimensional metallic silver using sodium beta-alumina crystal channels”,J. Non-Cryt. Solids355 (2009) 1448-1452.
  29. .B. N. Pal, B. M. Dhar,K. See, and H. E. Katz, “Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors”, Nature Materials,8, 898-903, 2009. IF 39.7 News and View: “OXIDE DIELECTRICS A change of direction” H Klauk, Nature Materials, 8, 853-854, 2009.
  30. .B. N. Pal, J. Sun, B. J. Jung, and H. E. Katz, “Pentacene-Zinc Oxide Vertical Diode with Compatible Grains and 15-MHz Rectification”, Adv. Mater., 20, 1023, 2008. IF 19
  31.  B.N. Pal, P. Trottman, J. Sun, H.E. Katz, “Solution-deposited Zinc oxide and Zinc oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar and Nonvolatile Devices”, Adv. Funct. Mater., 18, 1832, 2008. IF 11.4
  32. Takao Someya, Bholanath Pal, Jia Huang, and Howard E. Katz,  “Organic Semiconductor Devices with Enhanced Field and Environmental Responses”, MRS Bulletin.  33, 690, 2008.
  33. B. N. Pal, Jia Sun, B. J. Jung, and H. E. Katz, Solution-deposited ZnO-organic diodes with high current density and high frequency rectification under ambient conditions, MRS  Proc., (2007) 1035-L05-28
  34. . Bhola Nath Pal and DipankarChakravorty, Humidity sensing by composites of glass ceramics containing silver nanoparticles and their conduction mechanism”, Sensor and Actuator B, 114 (2006) 1043
  35. SoumitraKar, BholaNath Pal, Subhadra Chaudhuri1 and DipankarChakravorty.  “One-Dimensional ZnO Nanostructure Arrays- Synthesis, Characterization and Gas Sensing Behavior”, J. Phys. Chem. B,110 (2006) 4605-4611.
  36.  BholaNath Pal, and DipankarChakravorty.  “Pattern Formation of Zinc Nanoparticles in Silica Film by Electrodeposition,” J. Phys. Chem. B,110 (2006) 20917-20921
  37. D. Chakravorty, S. Basu, P. K. Mukherjee, S. K. Saha, B. N. Pal, A, Dan and S. Battacharya, “Novel Properties of glass-metal nanocomposites” J. of alloys and compounds352 (2006), 601-609
  38.  B. N. Pal,S. Basu and    D. Chakravorty, “Humidity sensing by Fractally Grown Nanocomposites”, J. Appl. Phys., 97, (2005), 034311
  39. . B.N.Pal and D.Chakravorty“Humidity Sensing by Composites with Tin-Tin Oxide Core-Shell Nanostructure”, J. Phys. D , 38 , (2005), 3537-3542.
  40.  B. N. Pal, S. Basu and D. Chakravorty “Electrically Aligned Binary System of Nanoparticles”, J. Appl. Phys., 98, (2005)084306.
  41. D. Chakravorty, K. Chatterjee, B. N. Pal, P K Mukherjee, S Banerjee, T. K.  Kundu, S.    K. Bhattacharyya and S. K. Saha; “Nanocomposites and nanowires”, Proceedings of X APAM Topical Seminer and    Conference Materials of Siberia, Nanoscience and Technology, 361 (2003).
  42. . B. N. Pal, S.Basu ,R.Das, and D.Chakravorty, Electrically Guided Assembly of  Planar Superlattices in Binary Colloidal Suspensions of Nano particles,Solid State Physics (India)46 (2003), 141
  43. B.N.Pal,T.Kundu, S.Banerjee and D.Chakravorty  “Humidity Sensing by Nanocomosites of Silver nano particles in Silicate Glass-Ceramics”, J. Appl. Phys., 93, 4201 (2003).
1 Megahertz organic/polymer diodes and methods related thereto”, H. E. Katz, B. N. Pal, and J. Sun, US patent office,: US8330149 B2 (Granted)
 
2. Low-voltage, n-channel hybrid transistor”, H. E. Katz, B. N. Pal, and K. See, US Patent office,: US8963126 B2 (Granted)
3. “Device having high dielectric constant, ionically polarizable materials” H. E. Katz, B. N. Pal, and K. See, US patent office,: US8766246 B2 (Granted)
PhD position is available. Please e-mail me for more information.
Group Members
Ph.D. Students
 Mr. Anand Sharma
 Research Interests:
 Solution-Processed Fabrication of Thin Film Transistor, Quantum Dot Light Emitting Transistor.
 Enrolment Year: 2014
anandbhu12191@gmail.com                        
 +91-9411489956
   Mr. Satya Veer Singh
 Research Interests:
 Solution - Processed Plasmonic Solar Cell, In-situ Growth of metal nano particle, Quantum Dot Synthesis
 Enrolment Year: 2014
 satyaveersingh777@gmail.com                     
  +91-8410421757
 Mr. Nitesh Kumar Chaurasia
 Research Interests:
Quantum Dot based Ultrafast Photodetector, Solution Processed Thin Film Transistor                              
 Enrolment Year: 2015                              
niteshphyzics@gmail.com                     
+91-7376508317
Mr. Vishwas Acharya
Research Interests:
Fabrication of Light Emitting Diode, AC-EL
 Enrolment Year: 2015                                        
vishwasacharya59@gmail.com
+91-9415272363
 Ms. Nila Pal
 Research Interests:
 Fabrication of Thin Film Transparent Transistor by Sol-Gel Method, Quantum Dot based Light    Emitting Transistor
 Enrolment Year: 2017                                 
 nilapal.rs.mst17@itbhu.ac.in                      
+91-9735017118
Mr. Ashok Mondal
 Research Interests:
Fabrication of thin film, Quantum Dot Optoelectronic devices
 Enrolment Year: 2017

ashokmondal.physics@gmail.com
+91-9775735200

M.Tech. Students
 Ms. Shipra Gupta

 Research Interest:
Nanomaterials & optoelectronic devices
Shiprag.mst16@itbhu.ac.in
+91-7355101880

 

S.N. Name of Instruments  
1 Spin Coater (Max. RPM 10K )
(Apexic India )
2 Thermal Evaporator
( Mansa Vacuum Equipment & Hind High Vacuum )
3 Plasma Surface Cleaner (O2, H2 , Ar)
(Diener electronic GmbH)
4 I-V Measurement
(Keysight  B2912A)
 
5 Photoluminescence
(Research India RIFS-T1705)
 
6 Microwave-Ultraviolet-Ultrasonic
(SINEO-UWave-1000)
7 Parameter (Semiconductor device) Analyzer
(Keysight  B1500A)
8 Muffle Furnaces
(Temperature Upto 10000C )