Specialization : Microelectronics Engineering 

Microelectronics Engineering: The inception of this specialization was closely associated with the Centre for Research in Microelectronics (CRME) established by the Ministry of Human Resource Development (MHRD), Govt. of India in 1983. The main aim of this Centre is to carry out teaching and research in the area of modeling, simulation, design, fabrication and characterization of advanced microelectronic, nanoelectronic and optoelectronic devices and circuits for electronic, gas sensing, bio-sensing, photodetection and solar cell applications. In addition to the regular Ph.D. program under this specialization, the department also offers a separate specialization in the Microelectronics Engineering at M.Tech. level. A number of B.Tech. students also take advanced undergraduate projects on the fabrication and characterization of thick film and thin film devices for various electronic, optoelectronic and sensing applications. . 

Sub Areas :

  • Modeling and TCAD Simulation of Advanced non-classical MOS transistors, 
  • Colloidal Quantum Dots based Spectrum Selective and Self-Powered Photodetectors 
  • Metal-Oxide Thin Film Based Devices for Optoelectronic and Gas Sensing Applications, 
  • Solar Cells, 
  • Nanostructure Electrodes for Bio-Sensing Applications, 

Major Achievements:

  • Prof. P. Chakrabarti has served as the Director of MNNIT Allahabad during 2011-2016.
  • Prof. P. Chakrabarti is serving as the Associate Editor of Journal of Electronic Materials-Springer.
  • Prof. S. Jit has been appointed as the Editor-In-Chief of the journal of Material Science Research India (UGC Approved Journal)
  • Prof. S. Jit has received the BOYSCAST Fellowship (2010-2011) from DST to work at the Max-Born-Institute, Division C, Berlin during Sept. 22 to Dec. 25, 2012.
  • Prof. S. Jit has received the Postdoctoral Research Fellowship, Georgia State University, Atlanta, USA, March-August, 2007.
  • Prof. S. Jit has received the INSA-Visiting Fellowship, 2006-2007.
  • Mr. Gopal Rawat (Ph.D student of Prof. S. Jit) has participated in Summer Institute on Sustainable Communities in Low-Resource Settings and Annual Research Conference held at University of British Columbia, Vancouver, Canada, during June 3, 2017 to June 11, 2017 organized by IC-IMPACTS (the India-Canada Centre for Innovative Multidisciplinary Partnerships to Accelerate Community Transformation and Sustainability) is the first, and only, Canada-India Research Centre of Excellence established through the Canadian Networks of Centres of Excellence (NCE) as a new Centre dedicated to the development of research collaborations between Canada and India. He was selected as one of the 12 students all over India to receive complete funding of the program.
  • Gopal Rawat and Chandan Kumar (both Ph.D students of Prof. S. Jit) participated in Summer Institute on Nanotechnologies held at University of Alberta, Canada, during May 29, 2016 to June 3, 2016 organized by IC-IMPACTS (the India-Canada Centre for Innovative Multidisciplinary Partnerships to Accelerate Community Transformation and Sustainability) is the first, and only, Canada-India Research Centre of Excellence established through the Canadian Networks of Centres of Excellence (NCE) as a new Centre dedicated to the development of research collaborations between Canada and India.
  • Mr. Hemant Kumar Bhatt (Ph.D student of Prof. S. Jit) has won the Gold Medal on Institute day 2017.

Recent Publications:

  •  C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “Poly (3, 3’’’-dialkylquaterthiophene) Based Flexible Nitrogen Dioxide Gas Sensor,” IEEE Sensors Letters (Accepted).
  • Sanjay Kumar, Kunal Singh, Sweta Chander, Ekta Goel, Prince Kumar Singh, Kamalaksha Baral, Balraj Singh, and S. Jit, “2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs with a SiO2/HfO2 Stacked Gate-Oxide Structure,” IEEE Trans. Electron Devices, Vol.: 65, pp. 331-338, 2018. 
  • Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, and S. Jit, “Heating Effects of Colloidal ZnO Quantum Dots (QDs) on ZnO QDs/CdSe QDs/MoOx Photodetectors,” IEEE Trans. Nanotechnology, 2017 (Accepted).
  • H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Colloidal CdSe Quantum Dots and PQT-12 Based Low-Temperature Self-Powered Hybrid Photodetector,” IEEE Photonics Technology Letters, Vol. 29, No. 20, pp. 1715 - 1718, 2017. 
  • Y. Kumar, H. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Visible-blind Au/ZnO Quantum dots based Highly Sensitive and Spectrum Selective Schottky Photodiode,” IEEE Trans. Electron Devices, Vol. 64, No. 7, pp. 2874 - 2880, July 2017.
  • H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Electrical and Optical Characteristics of Self-Powered Colloidal CdSe Quantum Dot (QD) Based Photodiode,” IEEE J. Quantum Electronics, Vol. 53, pp. 1-8, 2017.
  • G. Rawat, H. Kumar, Y. Kumar, C. Kumar, and S. Jit, “Effective Richardson Constant of Sol-Gel Derived TiO2 Films in n-TiO2/p-Si Heterojunctions," IEEE Electron Device Letters, Vol. 38, No. 5, pp. 633 - 636, 2017.
  • S. Kumar, E. Goel, K. Singh, B. Singh, P. K. Singh, K. Baral and S. Jit, “2D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs with a SiO2/HfO2 Stacked Gate-Oxide Structure,” IEEE Trans. Electron Devices, Vol 64, No. 3, pp. 960-968, March 2017.
  • B. Singh, D. Gola, K. Singh, E. Goel, S. Kumar and S. Jit, “Two-Dimensional Analytical Threshold Voltage Model for Dielectric Pocket Double-Gate Junctionless FETs by Considering Source/Drain Depletion Effect,” IEEE Trans. Electron Devices, Vol 64, No. 3, pp. 901 - 908, 2017.
  • Y. Kumar, H. Kumar, G. Rawat, C. Kumar, A. Sharma, B. N. Pal and S. Jit, "Colloidal ZnO Quantum Dots Based Spectrum Selective Ultraviolet Photodetectors" IEEE Photonics Technol. Lett., Vol. 29, No. 4, pp. 361 - 364, 2017.
  • G. Rawat, D. Somvanshi, Y. Kumar, H. Kumar, C. Kumar and S. Jit, “Electrical and Ultraviolet-A Detection Properties of E-Beam Evaporated n-TiO2 Capped p-Si Nanowires Heterojunction Photodiodes”, IEEE Trans. Nanotechnology, Vol. 16, No. , pp. 49 - 57, Jan. 2017.
  • S. Kumar, E. Goel, K. Singh, B. Singh, M. Kumar and S. Jit, “A Compact 2D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors with a SiO2/High-k Stacked Gate-Oxide Structure”, IEEE Transactions on Electron Devices, Vol 63, No. 8, pp. 3291-3299, 2016.
  • M. Kumar, S. Kumar, E. Goel, K. Singh, B. Singh, and S. Jit, “Strain-Induced Plasma Radiation at Terahertz Domain in Strained-Si-on-Insulator MOSFETs”, IEEE Trans. on Plasma Science, Vol. 44, No. 3, pp. 245-249, 2016.
  • G. Rawat, D. Somvanshi, H. Kumar, Y. Kumar, C. Kumar and S. Jit, “Ultraviolet Detection Properties of p-Si/n-TiO2 Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol-Gel Methods: A Comparative Study," IEEE Trans. Nanotechnology, Vol. 15, No. 2, pp. 193-200, 2016. 
  • E. Goel, S. Kumar, K. Singh, B. Singh, M. Kumar, and S. Jit, “2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs”, IEEE Transactions on Electron Devices, Vol 63, No. 3, pp. 966-973, 2016
  • B. Singh, D. Gola, K. Singh, E. Goel, S. Kumar and S. Jit, “Analytical Modeling of Channel Potential and Threshold Voltage of Double Gate Junctionless Field Effect Transistors with a Vertical Gaussian-Like Doping Profile”, IEEE Transactions on Electron Devices, Vol 63, No. 6, pp. 2299-2305, 2016. 
  • M. Kumar, and S. Jit, “A Novel Four-Terminal (4T) Ferroelectric Tunnel FET (Fe-TFET) for Quasi-Ideal Switch,” IEEE Trans. Nanotechnology (under Letters category), Vol. 14, No. 4, pp.600-602, 2015.
  • M. Kumar, and S. Jit, ”Effects of Electrostatically Doped Source/Drain and Ferroelectric Gate Oxide on Subthreshold Swing and Impact Ionization Rate of Strained-Si-on-Insulator Tunnel Field Effect Transistors,” IEEE Trans. Nanotechnology (under Letters category), Vol. 14, No. 4, pp. 597-599, 2015..
  • B. Yadav, A. Pandey, D. Somvanshi and S. Jit, “Sol-Gel Based High Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodetectors,” IEEE Trans. Electron Devices, Vol. 62, No. 6, pp. 1879-1884, 2015.
  • D. Somvanshi and S. Jit, “Effect of ZnO Seed Layer on the Electrical Characteristics of Pd/ZnO Thin Film based Schottky Contacts Grown on n-Si Substrates,” IEEE Trans. Nanotechnology, Vol.13(6),pp.1138-1144, 2014.
  • D. Somvanshi and S. Jit, “Analysis of Temperature Dependent Electrical Characteristics of n-ZnO Nanowires(NWs)/p-Si Heterojunction Diodes," IEEE Trans. Nanotechnology, Vol.13, pp.62-69, 2014.
  •  D. Somvanshi and S. Jit, "Effects of Sn and Zn Seed Layers on the Electrical Characteristics of Pd/ZnO Thin Film Schottky Diodes Grown on n-Si Substrates," IEEE Electron Device Letters, Vol.35(9), pp.945-947, 2014.
  •  D. Somvanshi and S. Jit, "Pd/ZnO Nanoparticles Based Schottky Ultraviolet Photodiodes Grown on Sn Coated n-Si Substrates by Thermal Evaporation Method," IEEE J. Selected Topics in Quantum Electronics, Vol. 20 (6), pp. 3803106:1-6, 2014.
  • B. Yadav, A. Pandey and S. Jit, “Pd Schottky Contacts on Sol-Gel Derived ZnO Thin Films with Nearly Ideal Richardson Constant,” IEEE Electron Device Letters, Vol. 35, pp. 729-730, July 2014.
  •  D. Somvanshi and S. Jit, “Mean Barrier Height and Richardson Constant for Pd/ZnO Thin Film Based Schottky Diodes Grown on n-Si Substrates by Thermal Evaporation Method,” IEEE Electron Device Letters, Vol.34(10), pp.1238-1240, 2013.
  • A. Sharma, N. Chaurasia, S. Anumol, Y. Kumar, S. Jit, A. Pandey and B N Pal, “Solution Processed Li5AlO4 dielectric for low voltage transistor fabrication and its application for metal oxide/quantum dot heterojunction phototransistor,” Journal of Materials Chemistry C (RSC) DOI: 10.1039/C7TC05074G (IF: 5.256) (Accepted)
  •  Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakashb and S. Jit, “Flexible poly (3, 3'''- dialkylquaterthiophene) based interdigitated metal-semiconductor-metal ammonia gas sensor,” Sensors and Actuators: B. Chemical, Vol. 255, Part 1, pp. 203-209, 2017​

Faculty: